US2005084445A1PendingUtilityA1

Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides

Priority: Sep 16, 1998Filed: Jul 2, 2004Published: Apr 21, 2005
Est. expirySep 16, 2018(expired)· nominal 20-yr term from priority
C04B 2235/404C01G 35/00C04B 2235/6582C04B 2235/721C01P 2004/50C01P 2004/20C01P 2006/40C04B 2235/72C04B 35/638Y10T428/12819C01P 2002/70C01G 1/02C01P 2006/12C04B 35/6268C01P 2006/10C04B 2235/5409C22C 29/12Y10T29/49002H01G 9/042C01P 2004/03C01P 2006/16C04B 35/6265C04B 2235/3253C04B 35/64C04B 35/495H01G 9/0525C04B 2235/77C01P 2006/14C01G 33/00H01G 9/052C04B 2235/79C01P 2006/80C04B 2235/3251C01P 2004/61C04B 2235/02
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Claims

Abstract

Methods to at least partially reduce a niobium oxide are described wherein the process includes heat treating the niobium oxide in the presence of a getter material and in an atmosphere which permits the transfer of oxygen atoms from the niobium oxide to the getter material, and for a sufficient time and at a sufficient temperature to form an oxygen reduced niobium oxide. Niobium oxides and/or suboxides are also described as well as capacitors containing anodes made from the niobium oxides and suboxides.

Claims

exact text as granted — not AI-modified
1 . A capacitor anode comprising a niobium oxide having an atomic ratio of niobium to oxygen of 1:less than 2.5 and being formed at a formation voltage of about 6 volts or higher.  
     
     
         2 . The capacitor anode of  claim 1 , wherein said capacitor anode is formed at a formation voltage of from about 6 to about 130 volts.  
     
     
         3 . The capacitor anode of  claim 1 , wherein said capacitor anode is formed at a formation voltage of from about 75 volts to about 130 volts.  
     
     
         4 . The capacitor anode of  claim 1 , wherein said capacitor anode is formed at a formation voltage of from about 75 volts to about 100 volts.  
     
     
         5 . The capacitor anode of  claim 1 , wherein said DC leakage is less than 15 nA/CV, wherein said DC leakage is determined at a sintering temperature of 1300° C. for 10 minutes and a formation temperature of 60° C.  
     
     
         6 . The capacitor anode of  claim 5 , wherein said DC leakage is less than about 12 nA/CV.  
     
     
         7 . The capacitor anode of  claim 3 , wherein said DC leakage is less than 15 nA/CV.  
     
     
         8 . A niobium oxide having an atomic ratio of niobium to oxygen of 1 less than 2.5, and having a nitrogen content of from about 31,000 ppm N 2  to about 130,000 ppm N 2 .  
     
     
         9 - 31 . (canceled)

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