US2005084714A1PendingUtilityA1

Method for fabricating a magnetoresistive film and magnetoresistive film

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Assignee: UNIV NAGOYAPriority: Feb 12, 2002Filed: Oct 6, 2004Published: Apr 21, 2005
Est. expiryFeb 12, 2022(expired)· nominal 20-yr term from priority
Inventors:Yutaka MoritomoXiaojun Liu
G01R 33/09B82Y 25/00H01F 41/301H01F 10/1933B82Y 10/00H01F 41/30B82Y 40/00G11B 2005/3996H01F 10/1936H01F 41/18G11B 5/3903H01F 41/22Y10T428/1259G11B 5/39Y10T428/32
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Claims

Abstract

A double perovskite type oxide film is formed on a given single crystalline substrate. Then, the oxide film in set in an oxygen-including atmosphere, thereby to be oxidized. As a result, oxygen is introduced excessively into the oxide film, to form half metal/insulator/half metal junction and thus, create a MR effect therein.

Claims

exact text as granted — not AI-modified
1 . A magnetoresistive film including excess oxygen and made of a double perovskite type oxide film with half metal/insulator/half metal junction.  
     
     
         2 . The magnetoresistive film as defined in  claim 1 , wherein the amount of said excess oxygen is set to at least 30 atomic percentages for the amount of Fe contained in said oxide film.  
     
     
         3 . The magnetoresistive film as defined in  claim 1 , wherein said oxide film is made of Sr 2 FeMoO 6  or Sr 2 FeReO 6 .

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