Apparatus for processing substrate and method of doing the same

Abstract

The apparatus for processing a substrate includes a substrate carrier for carrying a substrate, a chemical-applying unit for applying chemical to the substrate, and a gas-applying unit for applying gas atmosphere to the substrate.

1 . An apparatus for processing a substrate, comprising: 
 a substrate carrier for carrying a substrate;    a chemical-applying unit for applying chemical to said substrate; and    a gas-applying unit for applying gas atmosphere to said substrate.    
   
   
       2 . An apparatus for processing a substrate, comprising: 
 a substrate carrier for carrying a substrate;    a temperature-control unit for controlling a temperature of said substrate; and    a gas-applying unit for applying gas atmosphere to said substrate.    
   
   
       3 . The apparatus as set forth in  claim 1 , further comprising a temperature-control unit for controlling a temperature of said substrate.  
   
   
       4 . An apparatus for processing a substrate, comprising: 
 a substrate carrier for carrying a substrate; and    a gas-applying unit for applying gas atmosphere to said substrate,    wherein said gas-applying unit includes a temperature controller which keeps said substrate at 15 to 40 degrees centigrade both inclusive.    
   
   
       5 . The apparatus as set forth in  claim 4 , further comprising a temperature-control unit for controlling a temperature of said substrate.  
   
   
       6 . The apparatus as set forth in  claim 5 , further comprising a chemical-applying unit for applying chemical to said substrate.  
   
   
       7 . An apparatus for processing a substrate, comprising: 
 a substrate carrier for carrying a substrate;    a temperature-control unit for controlling a temperature of said substrate; and    a gas-applying unit for applying gas atmosphere to said substrate, wherein said gas-applying unit includes a temperature controller which keeps said substrate at 10 to 50 degrees centigrade both inclusive.    
   
   
       8 . The apparatus as set in  claim 7 , further comprising a chemical-applying unit for applying chemical to said substrate.  
   
   
       9 . An apparatus for processing a substrate, comprising: 
 a substrate carrier for carrying a substrate;    a temperature-control unit for controlling a temperature of said substrate; and    a gas-applying unit for applying gas atmosphere to said substrate,    wherein said gas-applying unit includes a temperature controller which keeps said substrate at a target temperature within ±2 degrees, said target temperature being in the range of 10 to 50 degrees centigrade both inclusive.    
   
   
       10 . The apparatus as set forth in  claim 9 , further comprising a chemical-applying unit for applying chemical to said substrate.  
   
   
       11 . An apparatus for processing a substrate, comprising: 
 a substrate carrier for carrying a substrate;    a temperature-control unit for controlling a temperature of said substrate; and    a gas-applying unit for applying gas atmosphere to said substrate,    wherein said temperature-control unit keeps said substrate at 15 to 40 degrees centigrade both inclusive.    
   
   
       12 . The apparatus as set forth in  claim 11 , further comprising a chemical-applying unit for applying chemical to said substrate.  
   
   
       13 . An apparatus for processing a substrate, comprising: 
 a substrate carrier for carrying a substrate;    a temperature-control unit for controlling a temperature of said substrate; and    a gas-applying unit for applying gas atmosphere to said substrate,    wherein said temperature-control unit keeps said substrate at 10 to 50 degrees centigrade both inclusive.    
   
   
       14 . The apparatus as set forth in  claim 13 , further comprising a chemical-applying unit for applying chemical to said substrate.  
   
   
       15 . An apparatus for processing a substrate, comprising: 
 a substrate carrier for carrying a substrate;    a temperature-control unit for controlling a temperature of said substrate; and    a gas-applying unit for applying gas atmosphere to said substrate,    wherein said temperature-control unit keeps said substrate at a target temperature within ±2 degrees, said target temperature being in the range of 10 to 50 degrees centigrade both inclusive.    
   
   
       16 . The apparatus as set forth in  claim 15 , further comprising a chemical-applying unit for applying chemical to said substrate.  
   
   
       17 . An apparatus for processing a substrate, comprising: 
 a substrate carrier for carrying a substrate;    a temperature-control unit for controlling a temperature of said substrate; and    a gas-applying unit for applying gas atmosphere to said substrate,    wherein each of said temperature-control unit and said gas-applying unit includes a temperature controller which keeps said substrate at 10 to 50 degrees centigrade both inclusive.    
   
   
       18 . The apparatus as set forth in  claim 17 , further comprising a chemical-applying unit for applying chemical to said substrate.  
   
   
       19 . An apparatus for processing a substrate, comprising: 
 a substrate carrier for carrying a substrate;    a temperature-control unit for controlling a temperature of said substrate; and    a gas-applying unit for applying gas atmosphere to said substrate,    wherein each of said temperature-control unit and said gas-applying unit includes a temperature controller which keeps said substrate at a target temperature within ±2 degrees, said target temperature being in the range of 10 to 50 degrees centigrade both inclusive.    
   
   
       20 . The apparatus as set forth in  claim 19 , further comprising a chemical-applying unit for applying chemical to said substrate.  
   
   
       21 . An apparatus for processing a substrate, comprising: 
 a substrate carrier for carrying a substrate;    a temperature-control unit for controlling a temperature of said substrate; and    a gas-applying unit for applying gas atmosphere to said substrate,    wherein each of said temperature-control unit and said gas-applying unit includes a temperature controller which keeps said substrate at 10 to 50 degrees centigrade both inclusive, and    temperature controllers of said temperature-control unit and said gas-applying unit have target temperatures at which said substrate is kept, said target temperatures being identical with each other or being within ±5 degrees to each other.    
   
   
       22 . The apparatus as set forth in  claim 21 , further comprising a chemical-applying unit for applying chemical to said substrate.  
   
   
       23 . An apparatus for processing a substrate, comprising: 
 a substrate carrier for carrying a substrate;    a temperature-control unit for controlling a temperature of said substrate; and    a gas-applying unit for applying gas atmosphere to said substrate,    wherein each of said temperature-control unit and said gas-applying unit includes a temperature controller which keeps said substrate at a target temperature within ±2 degrees, said target temperature being in the range of 10 to 50 degrees centigrade both inclusive, and temperature controllers of said temperature-control unit and said gas-applying unit have target temperatures at which said substrate is kept, said target temperatures being identical with each other or being within ±5 degrees to each other.    
   
   
       24 . The apparatus as set forth in  claim 23 , further comprising a chemical-applying unit for applying chemical to said substrate.  
   
   
       25 . The apparatus as set forth in  claim 4 , wherein said temperature-control unit keeps said substrate at 15 to 35 degrees centigrade both inclusive.  
   
   
       26 . The apparatus as set forth in  claim 7 , wherein said temperature-control unit keeps said substrate at 15 to 35 degrees centigrade both inclusive.  
   
   
       27 . The apparatus as set forth in  claim 9 , wherein said temperature-control unit keeps said substrate at 15 to 35 degrees centigrade both inclusive.  
   
   
       28 . The apparatus as set forth in  claim 11 , wherein said temperature-control unit keeps said substrate at 15 to 35 degrees centigrade both inclusive.  
   
   
       29 . The apparatus as set forth in  claim 13 , wherein said temperature-control unit keeps said substrate at 15 to 35 degrees centigrade both inclusive.  
   
   
       30 . The apparatus as set forth in  claim 15 , wherein said temperature-control unit keeps said substrate at 15 to 35 degrees centigrade both inclusive.  
   
   
       31 . The apparatus as set forth in  claim 17 , wherein said temperature-control unit keeps said substrate at 15 to 35 degrees centigrade both inclusive.  
   
   
       32 . The apparatus as set forth in  claim 19 , wherein said temperature-control unit keeps said substrate at 15 to 35 degrees centigrade both inclusive.  
   
   
       33 . The apparatus as set forth in  claim 21 , wherein said temperature-control unit keeps said substrate at 15 to 35 degrees centigrade both inclusive.  
   
   
       34 . The apparatus as set forth in  claim 23 , wherein said temperature-control unit keeps said substrate at 15 to 35 degrees centigrade both inclusive.  
   
   
       35 . The apparatus as set forth in  claim 1 , further comprising a controller which controls said substrate carrier, said chemical-applying unit and said gas-applying unit such that application of chemical to said substrate by said chemical-applying unit and application of gas atmosphere to said substrate by gas-applying unit are carried out in this order.  
   
   
       36 . The apparatus as set forth in  claim 2 , further comprising a controller which controls said substrate carrier, said temperature-control unit and said gas-applying unit such that temperature control of said substrate by said temperature-control unit and application of gas atmosphere to said substrate by said gas-applying unit are carried out in this order.  
   
   
       37 . The apparatus as set forth in  claim 1 , further comprising: 
 a temperature-control unit for controlling a temperature of said substrate; and    a controller which controls said substrate carrier, said chemical-applying unit, said temperature-control unit and said gas-applying unit such that application of chemical to said substrate by said chemical-applying unit, temperature control of said substrate by said temperature-control unit, and application of gas atmosphere to said substrate by gas-applying unit are carried out in this order.    
   
   
       38 . The apparatus as set forth in  claim 1 , further comprising a development unit for developing said substrate.  
   
   
       39 . The apparatus as set forth in  claim 1 , further comprising: 
 a development unit for developing a substrate;    a temperature-control unit for controlling a temperature of said substrate; and    a controller which controls said substrate carrier, said chemical-applying unit, said development unit, said temperature-control unit and said gas-applying unit such that application of chemical to said substrate by said chemical-applying unit, development of said substrate by said development unit, temperature control of said substrate by said temperature-control unit, and application of gas atmosphere to said substrate by gas-applying unit are carried out in this order.    
   
   
       40 . The apparatus as set forth in  claim 1 , further comprising: 
 a second chemical-applying unit for applying chemical to said substrate;    a temperature-control unit for controlling a temperature of said substrate; and    a controller which controls said substrate carrier, said chemical-applying unit, said second chemical-applying unit, said temperature-control unit and said gas-applying unit such that application of chemical to said substrate by said chemical-applying unit, application of chemical to said substrate by said second chemical-applying unit, temperature control of said substrate by said temperature-control unit, and application of gas atmosphere to said substrate by gas-applying unit are carried out in this order.    
   
   
       41 . The apparatus as set forth in  claim 1 , wherein said chemical-applying unit applies chemical to an organic film pattern formed on a substrate.  
   
   
       42 . The apparatus as set forth in  claim 1 , wherein said gas-applying unit applies gas atmosphere to an organic film pattern formed on a substrate.  
   
   
       43 . The apparatus as set forth in  claim 36 , wherein said development unit develops an organic film pattern formed on a substrate.  
   
   
       44 . The apparatus as set forth in  claim 1 , wherein chemical used in said chemical-applying unit contains at least acid chemical.  
   
   
       45 . The apparatus as set forth in  claim 1 , wherein chemical used in said chemical-applying unit contains at least organic solvent.  
   
   
       46 . The apparatus as set forth in  claim 1 , wherein chemical used in said chemical-applying unit contains at least alkaline chemical.  
   
   
       47 . The apparatus as set forth in  claim 46 , wherein said chemical-applying unit uses developing agent as said chemical for developing said substrate.  
   
   
       48 . The apparatus as set forth in  claim 38 , further comprising a light-exposure unit for exposing an organic film pattern formed on said substrate, to a light in an area of said organic film pattern covering a predetermined area of said substrate therewith.  
   
   
       49 . The apparatus as set forth in  claim 47 , further comprising a light-exposure unit for exposing an organic film pattern formed on said substrate, to a light in an area of said organic film pattern covering a predetermined area of said substrate therewith.  
   
   
       50 . The apparatus as set forth in  claim 48 , wherein said organic film pattern is exposed to a light in said area by radiating a light entirely over said area or by scanning said area with a spot-light.  
   
   
       51 . The apparatus as set forth in  claim 49 , wherein said predetermined area has an area equal to or greater than {fraction (1/10)} of an area of said substrate.  
   
   
       52 . The apparatus as set forth in  claim 48 , wherein said organic film pattern is exposed to at least one of ultra-violet rays, fluorescence, and natural light.  
   
   
       53 . The apparatus as set forth in  claim 1 , further comprising an ashing unit for ashing said substrate.  
   
   
       54 . The apparatus as set forth in  claim 53 , wherein said ashing unit etches films formed on said substrate by at least one of plasma, ozone and ultra-violet ray.  
   
   
       55 . The apparatus as set forth in  claim 1 , wherein an order in which said units are operated is variable.  
   
   
       56 . The apparatus as set forth in  claim 2 , wherein an order in which said units are operated is variable.  
   
   
       57 . The apparatus as set forth in  claim 4 , wherein an order in which said units are operated is variable.  
   
   
       58 . The apparatus as set forth in  claim 1 , wherein an order in which said units are operated is fixed.  
   
   
       59 . The apparatus as set forth in  claim 2 , wherein an order in which said units are operated is fixed.  
   
   
       60 . The apparatus as set forth in  claim 4 , wherein an order in which said units are operated is fixed.  
   
   
       61 . The apparatus as set forth in  claim 1 , wherein conditions in accordance with which said units are operated are variable.  
   
   
       62 . The apparatus as set forth in  claim 2 , wherein conditions in accordance with which said units are operated are variable.  
   
   
       63 . The apparatus as set forth in  claim 4 , wherein conditions in accordance with which said units are operated are variable.  
   
   
       64 . The apparatus as set forth in  claim 1 , wherein said apparatus includes a plurality of common units.  
   
   
       65 . The apparatus as set forth in  claim 2 , wherein said apparatus includes a plurality of common units.  
   
   
       66 . The apparatus as set forth in  claim 4 , wherein said apparatus includes a plurality of common units.  
   
   
       67 . The apparatus as set forth in  claim 64 , wherein substrates are in different directions from one another during processed in said common units.  
   
   
       68 . The apparatus as set forth in  claim 67 , wherein substrates are oppositely directed during processed in said common units.  
   
   
       69 . The apparatus as set forth in  claim 65 , wherein substrates are in different directions from one another during processed in said common units.  
   
   
       70 . The apparatus as set forth in  claim 69 , wherein substrates are oppositely directed during processed in said common units.  
   
   
       71 . The apparatus as set forth in  claim 66 , wherein substrates are in different directions from one another during processed in said common units.  
   
   
       72 . The apparatus as set forth in  claim 71 , wherein substrates are oppositely directed during processed in said common units.  
   
   
       73 . The apparatus as set forth in  claim 1 , wherein said substrate is processed a plurality of times in at least one of said units with said substrate being directed differently in each of times.  
   
   
       74 . The apparatus as set forth in  claim 73 , wherein said substrate is processed a plurality of times in at least one of said units with said substrate being directed oppositely in each of times.  
   
   
       75 . The apparatus as set forth in  claim 2 , wherein said substrate is processed a plurality of times in at least one of said units with said substrate being directed differently in each of times.  
   
   
       76 . The apparatus as set forth in  claim 75 , wherein said substrate is processed a plurality of times in at least one of said units with said substrate being directed oppositely in each of times.  
   
   
       77 . The apparatus as set forth in  claim 4 , wherein said substrate is processed a plurality of times in at least one of said units with said substrate being directed differently in each of times.  
   
   
       78 . The apparatus as set forth in  claim 77 , wherein said substrate is processed a plurality of times in at least one of said units with said substrate being directed oppositely in each of times.  
   
   
       79 . The apparatus as set forth in  claim 1 , wherein said substrate is processed in a first direction and in a second direction different from said first direction in at least one of said units.  
   
   
       80 . The apparatus as set forth in  claim 79 , wherein said first and second directions are opposite to each other.  
   
   
       81 . The apparatus as set forth in  claim 2 , wherein said substrate is processed in a first direction and in a second direction different from said first direction in at least one of said units.  
   
   
       82 . The apparatus as set forth in  claim 81 , wherein said first and second directions are opposite to each other.  
   
   
       83 . The apparatus as set forth in  claim 4 , wherein said substrate is processed in a first direction and in a second direction different from said first direction in at least one of said units.  
   
   
       84 . The apparatus as set forth in  claim 83 , wherein said first and second directions are opposite to each other.  
   
   
       85 . The apparatus as set forth in  claim 1 , wherein said apparatus has a function of prevent explosion and inflammation thereof.  
   
   
       86 . The apparatus as set forth in  claim 1 , wherein said gas-applying unit has a function of prevent explosion and inflammation thereof.  
   
   
       87 . The apparatus as set forth in  claim 2 , wherein said apparatus has a function of prevent explosion and inflammation thereof.  
   
   
       88 . The apparatus as set forth in  claim 2 , wherein said gas-applying unit has a function of prevent explosion and inflammation thereof.  
   
   
       89 . The apparatus as set forth in  claim 4 , wherein said apparatus has a function of prevent explosion and inflammation thereof.  
   
   
       90 . The apparatus as set forth in  claim 4 , wherein said gas-applying unit has a function of prevent explosion and inflammation thereof.  
   
   
       91 . The apparatus as set forth in  claim 1 , further comprising an etching unit for etching said substrate.  
   
   
       92 . The apparatus as set forth in  claim 2 , further comprising an etching unit for etching said substrate.  
   
   
       93 . The apparatus as set forth in  claim 4 , further comprising an etching unit for etching said substrate.  
   
   
       94 . The apparatus as set forth in  claim 1 , wherein said chemical-applying unit etches an underlying film located below an organic film pattern to pattern said underlying film with said organic film pattern formed on a substrate, being used as a mask.  
   
   
       95 . A method of processing a substrate through the use of an apparatus defined in  claim 1 , 
 said method including a step of processing an organic film pattern formed on a substrate,    said step including, in sequence:    a removal step of removing one of an alterated layer and a deposited layer formed on said organic film pattern; and    a fusion/deformation step of fusing said organic film pattern for deformation by applying gas atmosphere to said organic film pattern in said gas-applying unit,    wherein at least a part of said removal step is carried out by applying chemical to said organic film pattern in said chemical-applying unit.    
   
   
       96 . A method of processing a substrate through the use of an apparatus defined in  claim 53 , 
 said method including a step of processing an organic film pattern formed on a substrate,    said step including, in sequence:    a removal step of removing one of an alterated layer and a deposited layer formed on said organic film pattern; and    a fusion/deformation step of fusing said organic film pattern for deformation by applying gas atmosphere to said organic film pattern in said gas-applying unit,    said removal step including, in sequence:    ashing said organic film pattern in said ashing unit; and    applying chemical to said organic film pattern in said chemical-applying unit.    
   
   
       97 . A method of processing a substrate through the use of an apparatus defined in  claim 53 , 
 said method including a step of processing an organic film pattern formed on a substrate,    said step including, in sequence:    a removal step of removing one of an alterated layer and a deposited layer formed on said organic film pattern; and    a fusion/deformation step of fusing said organic film pattern for deformation by applying gas atmosphere to said organic film pattern in said gas-applying unit,    said removal step including, in sequence:    exposing said organic film pattern to a light in said light-exposure unit; and    developing said organic film pattern in said development unit.    
   
   
       98 . The method as set forth in  claim 97 , wherein said removal step further includes ashing said organic film pattern in said ashing unit, said ashing being carried out prior to said exposing said organic film pattern to a light in said light-exposure unit.  
   
   
       99 . The method as set forth in  claim 97 , wherein said removal step further includes ashing said organic film pattern in said ashing unit, said ashing being carried out subsequently to said exposing said organic film pattern to a light in said light-exposure unit, but prior to said developing said organic film pattern in said development unit.  
   
   
       100 . The method as set forth in  claim 97 , wherein said removal step further includes applying chemical to said organic pattern film in said chemical-applying unit, said applying chemical to said organic pattern film being carried out subsequently to said exposing said organic film pattern to a light in said light-exposure unit, but prior to said developing said organic film pattern in said development unit.  
   
   
       101 . The method as set forth in  claim 100 , wherein said removal step further includes ashing said organic film pattern in said ashing unit, said ashing being carried out prior to said exposing said organic film pattern to a light in said light-exposure unit.  
   
   
       102 . The method as set forth in  claim 100 , wherein said removal step further includes ashing said organic film pattern in said ashing unit, said ashing being carried out subsequently to said exposing said organic film pattern to a light in said light-exposure unit, but prior to said applying chemical to said organic pattern film.  
   
   
       103 . The method as set forth in  claim 98 , wherein said removal step further includes applying chemical to said organic pattern film in said chemical-applying unit, said applying chemical to said organic pattern film being carried out subsequently to said ashing step, but prior to said exposing said organic film pattern to a light in said light-exposure unit.  
   
   
       104 . A method of processing a substrate through the use of an apparatus defined in  claim 53 , 
 said method including a step of processing an organic film pattern formed on a substrate,    said step including, in sequence:    a removal step of removing one of an alterated layer and a deposited layer formed on said organic film pattern; and    a fusion/deformation step of fusing said organic film pattern for deformation by applying gas atmosphere to said organic film pattern in said gas-applying unit,    said removal step including, in sequence:    applying chemical to said organic pattern film in said chemical-applying unit; and    developing said organic film pattern in said development unit.    
   
   
       105 . A method of processing a substrate through the use of an apparatus defined in  claim 53 , 
 said method including a step of processing an organic film pattern formed on a substrate,    said step including, in sequence:    a removal step of removing one of an alterated layer and a deposited layer formed on said organic film pattern; and    a fusion/deformation step of fusing said organic film pattern for deformation by applying gas atmosphere to said organic film pattern in said gas-applying unit,    said removal step including, in sequence:    ashing said organic pattern film in said ashing unit; and    developing said organic film pattern in said development unit.    
   
   
       106 . The method as set forth in  claim 105 , wherein said removal step further includes applying chemical to said organic pattern film in said chemical-applying unit, said applying chemical to said organic pattern film being carried out subsequently to said ashing step, but prior to developing said organic film pattern in said development unit.  
   
   
       107 . The method as set forth in  claim 95 , wherein said step further includes patterning an underlying film located below said organic film pattern with said organic film pattern not yet subject to said step, being used as a mask.  
   
   
       108 . The method as set forth in  claim 95 , wherein said step further includes patterning an underlying film located below said organic film pattern with said organic film pattern already having been subject to said step, being used as a mask.  
   
   
       109 . The method as set forth in  claim 95 , wherein said step further includes: 
 patterning an underlying film located below said organic film pattern with said organic film pattern not yet subject to said step, being used as a mask; and    patterning said underlying film with said organic film pattern already having been subject to said step, being used as a mask.    
   
   
       110 . The method as set forth in  claim 95 , wherein said fusion/deformation step is a step for enlarging an area of said organic film pattern.  
   
   
       111 . The method as set forth in  claim 110 , wherein said fusion/deformation step is a step for integrating adjacent organic film patterns to each other.  
   
   
       112 . The method as set forth in  claim 95 , wherein said fusion/deformation step is a step for planarizing said organic film pattern.  
   
   
       113 . The method as set forth in  claim 95 , wherein said fusion/deformation step is a step for deforming said organic film pattern such that said organic film pattern acts as an electrically insulating film covering therewith a circuit pattern formed on said substrate.  
   
   
       114 . The method as set forth in  claim 96 , wherein said fusion/deformation step is a step for enlarging an area of said organic film pattern.  
   
   
       115 . The method as set forth in  claim 114 , wherein said fusion/deformation step is a step for integrating adjacent organic film patterns to each other.  
   
   
       116 . The method as set forth in  claim 96 , wherein said fusion/deformation step is a step for planarizing said organic film pattern.  
   
   
       117 . The method as set forth in  claim 96 , wherein said fusion/deformation step is a step for deforming said organic film pattern such that said organic film pattern acts as an electrically insulating film covering therewith a circuit pattern formed on said substrate.  
   
   
       118 . The method as set forth in  claim 95 , wherein said organic film pattern not yet subject to said processing step has at least two portions having thicknesses different from one another.  
   
   
       119 . The method as set forth in  claim 96 , wherein said organic film pattern not yet subject to said processing step has at least two portions having thicknesses different from one another.  
   
   
       120 . The method as set forth in  claim 95 , wherein said organic film pattern not yet subject to said processing step has at least two portions having thicknesses different from one another, and a portion having a small thickness is further thinned by said development step.  
   
   
       121 . The method as set forth in  claim 96 , wherein said organic film pattern not yet subject to said processing step has at least two portions having thicknesses different from one another, and a portion having a small thickness is further thinned by said development step.  
   
   
       122 . The method as set forth in  claim 95 , wherein said organic film pattern not yet subject to said processing step has at least two portions having thicknesses different from one another, and a portion having a small thickness is removed by said development step.  
   
   
       123 . The method as set forth in  claim 96 , wherein said organic film pattern not yet subject to said processing step has at least two portions having thicknesses different from one another, and a portion having a small thickness is removed by said development step.  
   
   
       124 . The method as set forth in  claim 95 , wherein said organic film pattern is kept not exposed to a light until said organic film pattern is processed after said organic film pattern has been formed on said substrate.  
   
   
       125 . The method as set forth in  claim 96 , wherein said organic film pattern is kept not exposed to a light until said organic film pattern is processed after said organic film pattern has been formed on said substrate.  
   
   
       126 . The method as set forth in  claim 95 , wherein said gas-applying step is carried out in gas atmosphere of organic solvent.  
   
   
       127 . A method of processing a substrate through the use of an apparatus defined in  claim 64 , 
 wherein the same process is applied to said substrate in each of said common units.    
   
   
       128 . The method as set forth in  claim 127 , wherein the same process is applied to said substrate in each of said common units with said substrate being directed in different directions in said common units.  
   
   
       129 . The method as set forth in  claim 128 , wherein the same process is applied to said substrate in each of said common units with said substrate being directed oppositely in said common units.  
   
   
       130 . A method of processing a substrate through the use of an apparatus defined in  claim 73 , 
 wherein said substrate is processed a plurality of times in a unit with said substrate being directed in different directions in each of times.    
   
   
       131 . The method as set forth in  claim 130 , wherein said substrate is processed a plurality of times in a unit with said substrate being directed oppositely in each of times.  
   
   
       132 . A method of processing a substrate through the use of an apparatus defined in  claim 79 , 
 wherein said substrate is processed in a unit in a first direction and in a second direction different from said first direction.    
   
   
       133 . The method as set forth in  claim 132 , wherein said first and second directions are opposite to each other.  
   
   
       134 . The method as set forth in  claim 132 , wherein said substrate is processed in said gas-applying unit in a first direction and in a second direction different from said first direction.