Structure and method for formation of a bipolar resistor

Abstract

A process of forming a nitride film on a semiconductor substrate including exposing a surface of the substrate to a rapid thermal process to form the nitride film.

1 - 34 . (canceled)  
   
   
       35 . A bipolar transistor structure, comprising: 
 a silicon nitride barrier layer, wherein the silicon nitride barrier layer has a conformality of greater than about 90%, and is formed by a rapid thermal nitride deposition process at a temperature from about 600° C. to about 775° C.    
   
   
       36 . (canceled)  
   
   
       37 . The transistor of  claim 35 , further comprising an insitu boron doped SiGe base.  
   
   
       38 . The transistor of  claim 35 , wherein the silicon nitride barrier layer is disposed on an oxide.  
   
   
       39 . The transistor of  claim 35 , wherein the silicon nitride barrier layer has a thickness from about 100 Å to about 150 Å.  
   
   
       40 . The transistor of  claim 35 , further comprising a polycrystalline silicon layer adjacent to the silicon nitride barrier layer.  
   
   
       41 . The transistor of  claim 40 , wherein the polycrystalline silicon layer is capped with a nitride film.  
   
   
       42 . The transistor of  claim 35 , wherein the rapid thermal nitride deposition process is performed at a temperature from about 600° C. to about 700° C.  
   
   
       43 . The transistor of  claim 35 , wherein the rapid thermal nitride deposition process is performed at a temperature from about 700° C. to about 775° C.  
   
   
       44 . The transistor of  claim 35 , wherein the rapid thermal nitride deposition process is performed at a temperature from about 680° C. to about 710° C.