Material processing system and method

Abstract

A material processing system for processing a work piece is provided. The material processing is effected by supplying a reactive gas and energetic radiation for activation of the reactive gas to a surrounding of a location of the work piece to be processed. The radiation is preferably provided by an electron microscope. An objective lens of the electron microscope is preferably disposed between a detector of the electron microscope and the work piece. A gas supply arrangement of the material processing system comprises a valve disposed spaced apart from the processing location, a gas volume between the valve and a location of emergence of the reaction gas being small. The gas supply arrangement further comprises a temperature-adjusted, especially cooled reservoir for accommodating a starting material for the reactive gas.

1 . A material processing system having at least one gas supply for supplying a reactive gas to a location of reaction, the gas supply comprising: 
 a tube having a first inner cross-section;    a valve body which can be reciprocated within the tube between a first position in which a gas flow through the tube is allowed and a second position in which the gas flow through the tube is substantially blocked; and    a hollow needle having an inlet end coupled to the tube and an outlet end;    wherein the hollow needle has a second inner cross-section in a portion of its outlet end which is smaller than the first inner cross-section, and wherein a volume of a coherent gas space, which is defined by at least the hollow needle, the inner cross-section of the hollow needle at the outlet end thereof and the valve body in its second position, fulfills the following relation:        V<c*A*l,      wherein    A is an area of the inner cross-section of the hollow needle at the outlet end thereof,    l is a distance between the outlet end of the hollow needle and the valve body in its second position, and    c is a constant less than 3.    
   
   
       2 . The material processing system according to  claim 1 , wherein the constant is less than 1.5.  
   
   
       3 . The material processing system according to  claim 1 , wherein the constant is less than 1.2.  
   
   
       4 . The material processing system according to  claim 1 , wherein the constant is less than 1.1.  
   
   
       5 . The material processing system according to  claim 1 , wherein an outer diameter of the hollow needle is smaller than an inner diameter of the tube.  
   
   
       6 . The material processing system according to  claim 1 , wherein the gas supply further comprises a reservoir communicated with the tube, for accommodating a starting material for generating the reactive gas, and a temperature-adjusting apparatus for adjusting a temperature of the starting material.  
   
   
       7 . The material processing system according to  claim 6 , wherein the temperature-adjusting apparatus is configured to adjust the temperature of the starting material to a temperature which is lower than a temperature of the hollow needle.  
   
   
       8 . The material processing system according to  claim 1 , wherein the gas supply further comprises a heating device for supplying heat to at least one of the hollow needle and the tube.  
   
   
       9 . The material processing system according to  claim 6 , wherein the gas supply further comprises a pressure sensor for detecting a gas pressure of the reactive gas, and a controller for controlling the temperature-adjusting apparatus in dependence of the detected gas pressure.  
   
   
       10 . The material processing system according to  claim 1 , comprising first and second gas supplies, wherein a reservoir of the first gas supply accommodates a first starting material, wherein a reservoir of the second gas supply accommodates a second starting material which is different from the first starting material, and wherein a gas conductance of the hollow needle of the first gas supply is different from a gas conductance of the hollow needle of the second gas supply.  
   
   
       11 . The material processing system according to  claim 10 , wherein, at a temperature of 20° C., the first starting material has a higher vapor pressure than the second starting material, and wherein the gas conductance of the hollow needle of the first gas supply is smaller than the gas conductance of the hollow needle of the second gas supply.  
   
   
       12 . The material processing system according to  claim 1 , further comprising 
 a processing chamber;    an electron microscope, having an electron source for generating an electron beam; at least one focusing lens for focusing the electron beam in the object plane within the processing chamber, and at least one electron detector for detecting electrons emanating from the object plane; and    a work piece mount configured for mounting a work piece to be processed in the processing chamber such that a surface portion of the work piece substantially coincides with the object plane of the electron microscope;    wherein the gas supply arrangement is configured to supply at least one reactive gas to a region close to the surface of the work piece, wherein the reactive gas can be induced to react with the work piece by means of the focused electron beam.    
   
   
       13 . The material processing system according to  claim 12 , wherein the electron microscope comprises at least first and second pressure diaphragms, each having an aperture for the electron beam to pass therethrough, wherein the first pressure diaphragm partially separates a vacuum section of the processing chamber from an intermediate vacuum section, wherein the second pressure diaphragm partially separates the intermediate vacuum section from a vacuum section accommodating the electron source, and wherein the system further comprises a pumping arrangement having a first vacuum pipe communicating the intermediate vacuum section with a first vacuum pump of the pumping arrangement, and wherein a first electron detector of the electron microscope is accommodated in the intermediate vacuum section.  
   
   
       14 . The material processing system according to  claim 13 , wherein a focusing lens of the electron microscope disposed next to the object plane is disposed between the first electron detector and the object plane.  
   
   
       15 . The material processing system according to  claim 13 , wherein the first vacuum pump communicated with the intermediate vacuum section for evacuating the intermediate vacuum section is a turbo molecular pump, and wherein the pumping arrangement further comprises a second vacuum pipe for communicating the processing chamber with a second vacuum pump, and a third vacuum pipe for communicating the vacuum section accommodating the electron source with a third vacuum pump.  
   
   
       16 . The material processing system according to  claim 13 , wherein a component of the electron microscope disposed next to the object plane has a substantially ring-shaped planar end face oriented towards the object plane, wherein the electron beam traverses an interior of the ring shape.  
   
   
       17 . The material processing system according to  claim 16 , wherein the work piece mount is configured to hold the work piece such that the surface thereof is disposed at a distance of less than 100 μm from the planar end face.  
   
   
       18 . The material processing system according to  claim 13 , wherein a component of the electron microscope disposed next to the object plane comprises a sealing to abut against the work piece.  
   
   
       19 . The material processing system according to  claim 18 , wherein the work piece mount is configured to bring the work piece into engagement with the sealing and to release the work piece from its engagement with the sealing.  
   
   
       20 . The material processing system according to  claim 19 , further comprising a valve to communicate a gas space defined by at least an interior of the sealing with the vacuum section of the processing chamber.  
   
   
       21 . The material processing system according to  claim 13 , wherein the first pressure diaphragm is disposed between the object plane and the focusing lens disposed closest to the object plane.  
   
   
       22 . The material processing system according to  claim 13 , further comprising a second electron detector disposed within the processing chamber.  
   
   
       23 . The material processing system according to  claim 13 , further comprising an energy-resolving photon detector for detecting photons emanating from the work piece.  
   
   
       24 . A material processing system having at least one gas supply for supplying a reactive gas to a location of reaction, the gas supply comprising: 
 a tube;    a valve body which can be reciprocated within the tube between a first position in which a gas flow through the tube is allowed and a second position in which the gas flow through the tube is substantially blocked;    a hollow needle having an inlet end coupled to the tube and an outlet end;    a reservoir communicated with the tube, for accommodating a starting material for generating the reactive gas; and    a temperature-adjusting apparatus for adjusting a temperature of the starting material within the reservoir.    
   
   
       25 . The material processing system according to  claim 24 , wherein the temperature-adjusting apparatus is configured to adjust the temperature of the starting material to a temperature which is lower than a temperature of the hollow needle.  
   
   
       26 . The material processing system according to  claim 24 , wherein the gas supply further comprises a heating device for supplying heat to at least one of the hollow needle and the tube.  
   
   
       27 . The material processing system according to  claim 24 , wherein the gas supply further comprises a pressure sensor for detecting a gas pressure of the reactive gas, and a controller for controlling the temperature-adjusting apparatus in dependence of the detected gas pressure.  
   
   
       28 . A material processing system comprising: 
 a processing chamber;    an electron microscope, having an electron source for generating an electron beam; at least one focusing lens for focusing the electron beam in the object plane within the processing chamber, and at least one electron detector for detecting electrons emanating from the object plane;    a work piece mount configured for mounting a work piece to be processed in the processing chamber such that a surface portion of the work piece substantially coincides with the an object plane of the electron microscope; and    a gas supply arrangement configured to supply at least one reactive gas to a region close to the surface of the work piece;    wherein the electron microscope comprises at least first and second pressure diaphragms, each having an aperture for the electron beam to pass therethrough, wherein the first pressure diaphragm partially separates a vacuum section of the processing chamber from an intermediate vacuum section, wherein the second pressure diaphragm partially separates the intermediate vacuum section from a vacuum section accommodating the electron source;    and wherein the system further comprises a pumping arrangement having a first vacuum pipe communicating the intermediate vacuum section with a first vacuum pump of the pumping arrangement, and wherein a first electron detector of the electron microscope is accommodated in the intermediate vacuum section.    
   
   
       29 . The material processing system according to  claim 28 , wherein a focusing lens of the electron microscope disposed next to the object plane is disposed between the first electron detector and the object plane.  
   
   
       30 . The material processing system according to  claim 28 , wherein the first vacuum pump communicated with the intermediate vacuum section for evacuating the intermediate vacuum section is a turbo molecular pump, and wherein the pumping arrangement further comprises a second vacuum pipe for communicating the processing chamber with a second vacuum pump, and a third vacuum pipe for communicating the vacuum section accommodating the electron source with a third vacuum pump.  
   
   
       31 . The material processing system according to  claim 28 , wherein a component of the electron microscope disposed next to the object plane has a substantially ring-shaped planar end face oriented towards the object plane, wherein the electron beam traverses an interior of the ring shape.  
   
   
       32 . The material processing system according to  claim 31 , wherein the work piece mount is configured to hold the work piece such that the surface thereof is disposed at a distance of less than 100 μm from the planar end face.  
   
   
       33 . The material processing system according to  claim 28 , wherein a component of the electron microscope disposed next to the object plane comprises a sealing to abut against the work piece.  
   
   
       34 . The material processing system according to  claim 33 , wherein the work piece mount is configured to bring the work piece into engagement with the sealing and to release the work piece from its engagement with the sealing.  
   
   
       35 . The material processing system according to  claim 33 , further comprising a valve to communicate a gas space defined by at least an interior of the sealing with the vacuum section of the processing chamber.  
   
   
       36 . The material processing system according to  claim 28 , wherein the first pressure diaphragm is disposed between the object plane and the focusing lens disposed closest to the object plane.  
   
   
       37 . The material processing system according to  claim 28 , comprising a second electron detector disposed within the processing chamber.  
   
   
       38 . A method for processing a work piece using a material processing system having at least one gas supply for supplying a reactive gas to a location of reaction, the gas supply comprising: 
 a tube having a first inner cross-section;    a valve body which can be reciprocated within the tube between a first position in which a gas flow through the tube is allowed and a second position in which the gas flow through the tube is substantially blocked; and    a hollow needle having an inlet end coupled to the tube and an outlet end;    wherein the hollow needle has a second inner cross-section in a portion of its outlet end which is smaller than the first inner cross-section, and wherein a volume of a coherent gas space, which is defined by at least the hollow needle, the inner cross-section of the hollow needle at the outlet end thereof and the valve body in its second position, fulfills the following relation:        V<c*A*l,      wherein    A is an area of the inner cross-section of the hollow needle at the outlet end thereof,    l is a distance between the outlet end of the hollow needle and the valve body in its second position, and    c is a constant less than 3; and    wherein the method comprises:    taking an electron-microscopic image of a portion of the work piece by directing an electron beam to a plurality of locations within the portion and recording secondary electrons emanating from the work piece in dependence of the locations to which the electron beam is directed;    determining at least one location within the portion of the work piece where the material of the work piece is to be removed or where material is to be deposited on the work piece;    supplying at least one reactive gas to the portion of the work piece; and    directing the electron beam to the at least one predetermined location of the work piece to induce the at least one reactive gas to react with the work piece.    
   
   
       39 . The method according to  claim 38 , wherein the electron-microscopic image is taken after the reaction has been induced and, in dependence of the image taken, a further location is determined within the portion of the work piece where material is to be removed from or deposited on the work piece.  
   
   
       40 . The method according to  claim 38 , wherein the work piece is a mask for use in a lithographic process.  
   
   
       41 . A method for processing a work piece using a material processing system having at least one gas supply for supplying a reactive gas to a location of reaction, the gas supply comprising: 
 a tube;    a valve body which can be reciprocated within the tube between a first position in which a gas flow through the tube is allowed and a second position in which the gas flow through the tube is substantially blocked;    a hollow needle having an inlet end coupled to the tube and an outlet end;    a reservoir communicated with the tube, for accommodating a starting material for generating the reactive gas; and    a temperature-adjusting apparatus for adjusting a temperature of the starting material within the reservoir; and    wherein the method comprises:    taking an electron-microscopic image of a portion of the work piece by directing an electron beam to a plurality of locations within the portion and recording secondary electrons emanating from the work piece in dependence of the locations to which the electron beam is directed;    determining at least one location within the portion of the work piece where the material of the work piece is to be removed or where material is to be deposited on the work piece;    supplying at least one reactive gas to the portion of the work piece; and    directing the electron beam to the at least one predetermined location of the work piece to induce the at least one reactive gas to react with the work piece.    
   
   
       42 . A method for processing a work piece using a material processing system, the material processing system comprising: 
 a processing chamber;    an electron microscope, having an electron source for generating an electron beam; at least one focusing lens for focusing the electron beam in the object plane within the processing chamber, and at least one electron detector for detecting electrons emanating from the object plane;    a work piece mount configured for mounting a work piece to be processed in the processing chamber such that a surface portion of the work piece substantially coincides with the an object plane of the electron microscope;    a gas supply arrangement configured to supply at least one reactive gas to a region close to the surface of the work piece;    wherein the electron microscope comprises at least first and second pressure diaphragms, each having an aperture for the electron beam to pass therethrough, wherein the first pressure diaphragm partially separates a vacuum section of the processing chamber from an intermediate vacuum section, wherein the second pressure diaphragm partially separates the intermediate vacuum section from a vacuum section accommodating the electron source;    and wherein the system further comprises a pumping arrangement having a first vacuum pipe communicating the intermediate vacuum section with a first vacuum pump of the pumping arrangement, and wherein a first electron detector of the electron microscope is accommodated in the intermediate vacuum section; and    wherein the method comprises:    taking an electron-microscopic image of a portion of the work piece by directing an electron beam to a plurality of locations within the portion and recording secondary electrons emanating from the work piece in dependence of the locations to which the electron beam is directed;    determining at least one location within the portion of the work piece where the material of the work piece is to be removed or where material is to be deposited on the work piece;    supplying at least one reactive gas to the portion of the work piece; and    directing the electron beam to the at least one predetermined location of the work piece to induce the at least one reactive gas to react with the work piece.