Cleaning and etching methods and their apparatuses

Abstract

A cleaning method for removing fats, oils, and silicon small particles, which are conventionally difficult to remove, adhering to devices and carriers used to manufacture a semiconductor wafer or a semiconductor device. An etching method is also disclosed. XeF 2 gas produced by sublimation is made to contact with an object to be cleaned in a vacuum atmosphere so as to decompose and gasify the oils and fats and to remove silicon small particles by etching. Prior to the cleaning, when a trace amount of residual water is left in the vacuum atmosphere, H 2 O reacts with XeF 2 , and HF is produced. For example, a native oxide SiO 2 formed on the surface of silicon small particles can be removed, and XeF 2 directly reacts with silicon, therby enabling etching. The cleaning etching rates are extremely high.

1 - 4 . (canceled)  
   
   
       5 . A cleaning apparatus, comprising: 
 a pressure-reducing/vacuum means;    XeF 2  gas generating means; and    means for making an atmosphere in the apparatus contain water, wherein    XeF 2  gas contacts and acts on an article to be cleaned in a reduced-pressure or vacuum atmosphere containing a required amount of water, and then XeF 2  gas contacts and acts on the article to be cleaned in a dry, reduced-pressure or vacuum atmosphere not.    
   
   
       6 - 8 . (canceled)  
   
   
       9 . An etching apparatus, comprising: 
 a pressure-reducing/vacuum means    XeF 2  gas generating means; and    means for making an atmosphere in the apparatus contain water, wherein    XeF 2  gas contacts and acts on an article to be processed in a reduced-pressure or vacuum atmosphere containing a required amount of water, and then XeF 2  gas contacts and acts on the article to be processed in a dry, reduced-pressure or vacuum atmosphere.    
   
   
       10 . The cleaning apparatus according to  claim 5 , wherein the pressure-reducing/vacuum means, the XeF 2  gas generating means, and the means for making the atmosphere contain water, are provided in a semiconductor wafer manufacturing apparatus or a semiconductor device manufacturing apparatus.  
   
   
       11 . The cleaning apparatus according to  claim 5 , further comprising cooling means for cooling the article to be cleaned.  
   
   
       12 . The cleaning apparatus according to  claim 5 , further comprising a gas flow controller for supplying water vapor into the atmosphere containing water in the apparatus.  
   
   
       13 . The cleaning apparatus according to  claim 5 , further comprising at least one of a dehumidification means and a humidification means for controlling the amount of the water in the atmosphere containing water in the apparatus.  
   
   
       14 . The etching apparatus according to  claim 9 , wherein the pressure-reducing/vacuum means, the XeF 2  gas generating means, and the means for making the atmosphere contain water, are provided in a semiconductor wafer manufacturing apparatus or a semiconductor device manufacturing apparatus.  
   
   
       15 . The cleaning apparatus according to  claim 9 , further comprising cooling means for cooling the article to be processed.  
   
   
       16 . The cleaning apparatus according to  claim 9 , further comprising a gas flow controller for supplying water vapor into the atmosphere containing water in the apparatus.  
   
   
       17 . The cleaning apparatus according to  claim 9 , further comprising at least one of a dehumidification means and a humidification means for controlling the amount of the water in the atmosphere containing water in the apparatus.