Precise, in-situ endpoint detection for charged particle beam processing
Abstract
A system and method for determining precisely in-situ the endpoint of halogen-assisted charged particle beam milling of a hole or trench in the backside of the substrate of a flipchip packaged IC. The backside of the IC is mechanically thinned. Optionally, a coarse trench is then milled in the thinned backside of the IC using either laser chemical etching or halogen-assisted charged particle beam milling. A further small trench is milled using a halogen-assisted charged-particle beam (electron or ion beam). The endpoint for milling this small trench is determined precisely by monitoring the power supply leakage current of the IC induced by electron-hole pairs created by the milling process. A precise in-situ endpoint detection signal is generated by modulating the beam at a reference frequency and then amplifying that frequency component in the power supply leakage current with an amplifier, narrow-band amplifier or lock-in amplifier. The precise, in-situ, endpoint signal is processed and displayed for manual or automatic precise in-situ endpoint detection. This approach avoids or minimizes unintentional damage or perturbation of the active diffusion regions in the IC. A range of further operations on the IC can then be performed.
Claims
exact text as granted — not AI-modified1 . A system for milling a trench with precise in-situ endpoint detection in a backside of a substrate of an IC, the system comprising:
a. a charged particle beam generating column subsystem including a secondary particle detector; b. a holder for holding the IC in the path of a charged particle beam generated by the column subsystem, said holder and said charged particle beam being positioned in a vacuum chamber; c. an XY stage for providing relative motion between said IC and said column subsystem; d. a beam modulator for modulating said charged particle beam at a reference frequency; e. a halogen-based gas injector disposed to deliver halogen-based gas to an area of the backside of the substrate where the trench is milled with the charged particle beam; f. an amplifier disposed to measure a reference frequency component of a power supply leakage current of the IC, the amplifier having an output connected to an indicator for monitoring a precise in-situ endpoint signal.
2 . The system of claim 1 wherein said holder is coupled to said XY stage, said XY stage thereby enabling motion of said IC relative to said column subsystem.
3 . The system of claim 1 wherein said column subsystem is coupled to said XY stage, said XY stage thereby enabling motion of said column subsystem relative to said IC.
4 . The system of claim 1 wherein the amplifier is a lock-in amplifier.
5 . The system of claim 1 wherein said beam modulator is a beam blanker for pulsing the charged particle beam at a reference frequency.
6 . The system of claim 1 wherein said beam modulator is a raster scanner disposed to scan said charged particle beam at a scanning frequency during milling, said reference frequency being derived from the scanning frequency.
7 . The system of claim 4 wherein the lock-in amplifier is provided with a reference signal at the reference frequency.
8 . The system of claim 1 further comprising a milling cut-off to stop milling at a predetermined milling endpoint when the precise in-situ endpoint signal reaches a predetermined state.
9 . The system of claim 1 wherein the column is an ion-beam column.
10 . The system of claim 1 wherein the column is an electron beam column.
11 . The system of claim 1 where an output of the lock-in amplifier is rectified and smoothed for display.
12 . The system of claim 1 wherein said indicator is a display.
13 . The system of claim 1 wherein said indicator is an audible signal.
14 . The system of claim 1 wherein said indicator is a voice synthesizer.Cited by (0)
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