Sputtering apparatus and sputter film deposition method

Abstract

A sputtering apparatus and a sputter film deposition method, which includes a conventional magnetron and an AC magnetron for deposition of a low refractive index film, and a conventional magnetron and an AC magnetron for deposition of a high refractive index film, performs film deposition by each of the AC magnetrons until having achieved 90% of a designed film thickness, and then performs the film deposition only by each of the conventional magnetrons, and which can control the film thickness with high precision and have excellent productivity.

1 . A carousel sputtering apparatus which is configured so that a drum, which is formed in a polygonal or circular shape in transverse cross-section, is provided so as to be rotatable in a chamber, the drum having substrate holders provided on an outer peripheral surface; 
 magnetron sputtering sources are provided inside a chamber wall;    each of the magnetron sputtering sources comprises a target and a magnetron unit for holding the target; and    the targets are held so as to be parallel with a rotary axis of the drum by the magnetron units;    the sputtering apparatus comprising:    a film thickness measuring instrument, which measures a thickness of a film deposited on a substrate mounted on one of said substrate holders during film deposition;    a power supply unit, which supplies the respective targets with power required for sputtering; and    a controller, which controls parameters affecting on an amount of film deposition, based on measurement results obtained by the film thickness measuring instrument.    
     
     
         2 - 5 . (canceled)  
     
     
         6 . The sputtering apparatus according to  claim 1 , wherein the magnetron sputtering sources are a combination of a magnetron sputtering source for mounting a target for deposition of a low refractive index film, and a magnetron sputtering source for mounting a target for deposition of a high refractive index film.  
     
     
         7 . The sputtering apparatus according to  claim 1 , wherein the film thickness measuring instrument comprises a light emitter for radiating measuring light onto a substrate and a light receiver for receiving transmitted light or reflected light of the measuring light radiated onto the substrate to generate an electrical signal in response to a receiving amount of the transmitted light or the reflected light, wherein while the drum is rotated, the measuring light is radiated onto the substrate from the light emitter to measure the film thickness.  
     
     
         8 . The sputtering apparatus according to  claim 7 , further comprising a calculating means for finding transmittance information or reflectance information based on the signal output from the light receiver.  
     
     
         9 - 13 . (canceled)  
     
     
         14 . The sputtering apparatus according to  claim 7 , wherein the film thickness measuring instrument is provided at a position far from the magnetron sputtering sources.  
     
     
         15 - 19 . (canceled)  
     
     
         20 . A sputter film deposition method using a carousel sputtering apparatus which is configured so that a drum, which is formed in a polygonal or circular shape in transverse cross-section, is provided so as to be rotatable in a chamber, the drum having substrate holders provided on an outer peripheral surface; magnetron sputtering sources are provided inside a chamber wall; each of the magnetron sputtering sources comprises a target and a magnetron unit for holding the target; and the targets are held so as to be parallel with a rotary axis of the drum by the magnetron units; 
 the method comprising:    measuring a thickness of a film deposited on a substrate mounted on one of said substrate holders during film deposition; and    controlling parameters affecting on an amount of film deposition, based on measurement results obtained by the film thickness measuring step.    
     
     
         21 - 23 . (canceled)  
     
     
         24 . The method according to  claim 20 , further comprises radiating measuring light onto the substrate while rotating the drum; and receiving transmitted light or reflected light of the measuring light radiated onto the substrate to generate an electrical signal in response to a receiving amount of the transmitted light or the reflected light.  
     
     
         25 . The method according to  claim 24 , further comprising calculating transmittance information or reflectance information based on the signal output from the light receiving step.  
     
     
         26 - 30 . (canceled)  
     
     
         31 . The method according to  claim 20 , wherein the film thickness is measured at a position far from the magnetron units so as to minimize an adverse effect by plasma light generated in the magnetron units.  
     
     
         32 - 33 . (canceled)