Semiconductor processing equipment having improved process drift control

Abstract

A plasma processing chamber including a slip cast part having a surface thereof exposed to the interior space of the chamber. The slip cast part includes free silicon contained therein and a protective layer on the surface which protects the silicon from being attacked by plasma in the interior space of the chamber. The slip cast part can be made of slip cast silicon carbide- coated with CVD silicon carbide. The slip cast part can comprise one or more parts of the chamber such as a wafer passage insert, a monolithic or tiled liner, a plasma screen, a showerhead, dielectric member, or the like. The slip cast part reduces particle contamination and reduces process drift in plasma processes such as plasma etching of dielectric materials such as silicon oxide.

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       19 . A slip cast part for use in a plasma processing chamber, the slip cast part comprising: 
 free silicon; and    a protective layer that protects the silicon from being attacked by plasma in the processing chamber.    
   
   
       20 . The slip cast part according to  claim 19 , wherein the plasma comprises one or more hydrofluorocarbon gases.  
   
   
       21 . The slip cast part according to  claim 19 , wherein the slip cast part provides a ground path for plasma in the processing chamber.  
   
   
       22 . The slip cast part according to  claim 19 , wherein the slip cast part comprises porous silicon carbide backfilled with silicon.  
   
   
       23 . The slip cast part according to  claim 19 , wherein the protective layer is a chemical vapor deposited layer of silicon carbide.  
   
   
       24 . The slip cast part according to  claim 19 , wherein the slip cast part is attached to a sidewall of the processing chamber by an elastomer joint.  
   
   
       25 . The slip cast part according to  claim 19 , wherein the slip cast part comprises a liner.  
   
   
       26 . The slip cast part according to  claim 19 , wherein the slip cast part comprises a perforated baffle extending between a substrate holder and an inner wall of the processing chamber.  
   
   
       27 . The slip cast part according to  claim 19 , wherein the slip cast part comprises a liner and a baffle, the liner surrounding a substrate holder and the baffle comprising a foraminous ring extending between the liner and the substrate holder.  
   
   
       28 . The slip cast part according to  claim 19 , wherein the slip cast part comprises a focus ring.  
   
   
       29 . The slip cast part according to  claim 19 , wherein the slip cast part comprises a wafer passage insert fitted in an opening in a liner in the processing chamber.  
   
   
       30 . The slip cast part according to  claim 19 , wherein the slip cast part comprises a gas distribution plate supplying process gas to the processing chamber.  
   
   
       31 . The slip cast part according to  claim 30 , wherein the gas distribution plate has a resistivity high enough to allow RF energy to pass therethrough, the process gas being energized by an antenna which couples RF energy into the chamber through the gas distribution plate.  
   
   
       32 . The slip cast part according to  claim 31 , wherein the slip cast part further comprises a chamber liner having a resistivity below 200 Ω·cm.