Plating apparatus, plating method, and manufacturing method of semiconductor device

Abstract

According to an embodiment of the present invention, a plating apparatus, including: a plating solution tank configured to store a plating solution; a holder configured to hold a substrate on which a seed layer is formed in said plating solution tank; a first anode disposed in said plating solution tank, composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer, and electrically connectable to the seed layer of the substrate held by said holder; and a second anode disposed in said plating solution tank, capable of applying a voltage between the seed layer of the substrate held by holder, is provided.

1 . A plating apparatus, comprising: 
 a plating solution tank configured to store a plating; solution;    a holder configured to hold a substrate on which a seed layer is formed in, said plating solution tank;    a first anode disposed in said plating solution tank, composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer, and electrically connectable to the seed layer of the substrate held by said holder; and    a second anode disposed in said plating solution tank, capable of applying a voltage between the seed layer of the substrate held by said holder.    
     
     
         2 . The plating apparatus according to  claim 1 , further comprising: 
 a partition wall or a membrane which is disposed in said plating solution tank, and separates the region where the substrate held by said holder is immersed in the plating solution-from the region where said first anode is disposed.    
     
     
         3 . The plating apparatus according to  claim 1 , wherein said first anode is composed of metal, metal oxide, or carbon.  
     
     
         4 . The plating apparatus according to  claim 3 , wherein the seed layer is composed of Cu, and said first anode is composed of Zn, Ta, oxides of those, or C.  
     
     
         5 . The plating apparatus according to  claim 1 , wherein said first anode is disposed outside of the region sandwiched by the substrate held by said holder and said second anode.  
     
     
         6 . The plating apparatus according to  claim 1 , wherein said first anode is formed to have a smaller contact area with the plating solution than a contact area of the substrate with the plating solution.  
     
     
         7 . A plating method, comprising: 
 electrically connecting a first anode to a seed layer of a substrate,    wherein the first anode is disposed in a plating solution, and composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer;    wetting the substrate in the plating solution; and    plating the substrate by applying a voltage between the seed layer and a second anode disposed in the plating solution.    
     
     
         8 . The plating method according to  claim 7 , further comprising: 
 disconnecting the electrical connection between the first anode and the seed layer between said wetting the substrate in the plating solution and said plating the substrate.    
     
     
         9 . The plating method according to  claim 7 , wherein said wetting the substrate in the plating solution is performed while separating the region where the substrate is wetted in the plating solution from the region where the first anode is disposed by a partition wall or a membrane.  
     
     
         10 . The plating method according to  claim 7 , wherein the first anode is composed of metal, metal oxide, or carbon.  
     
     
         11 . The plating method according to  claim 10 , wherein the seed layer is composed of Cu, the first anode is composed of Zn, Ta, oxides of those, or C.  
     
     
         12 . The plating method according to  claim 7 , wherein the first-anode is disposed outside of the region sandwiched by the substrate and the second anode.  
     
     
         13 . The plating method according to  claim 7 , wherein the first anode has a smaller contact area with the plating solution than a contact area of the substrate with the plating solution.  
     
     
         14 . A manufacturing method of a semiconductor device, comprising: 
 forming a seed layer on a substrate having a recessed portion on the surface, so as to be filled in a part of the recessed portion;    electrically connecting a first anode to the seed layer,    wherein the first anode is disposed in a plating solution, and composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer;    wetting the substrate on which the first anode is electrically connected to the seed layer in the plating solution;    forming a plating film on the seed layer so as to be filled in the recessed portion, by applying a voltage between the seed layer and a second anode disposed in the plating solution; and    removing the plating film other than the one filled in the recessed portion and the seed layer other than the one filled in the recessed portion.    
     
     
         15 . The manufacturing method according to  claim 14 , further comprising: 
 disconnecting the electrical connection between the first anode and the seed layer, between said wetting the substrate in the plating solution and said forming the plating film.    
     
     
         16 . The manufacturing method according to  claim 14 , wherein said wetting the substrate in the plating solution is performed while separating the region where the substrate is wetted in the plating solution from the region where the first anode is disposed by a partition-wall or a membrane.  
     
     
         17 . The manufacturing method according to  claim 14 , wherein the first anode is composed of metal, metal oxide, or carbon.  
     
     
         18 . The manufacturing method according to  claim 17 , wherein the seed layer-is composed of Cu, the first anode is composed of Zn, Ta, oxides of those, or C.  
     
     
         19 . The manufacturing method according to  claim 14 , wherein the first anode is disposed outside of the region sandwiched by the substrate and the second anode.  
     
     
         20 . The manufacturing method according to  claim 14 , wherein the first anode has a smaller contact area with the plating solution than a contact area of the substrate with the plating solution.