Magnetoresistive device and electronic device

Abstract

A magnetoresistive device ( 11 ) having a lateral structure and provided with a non-magnetic spacer layer ( 3 ) of organic semiconductor material allows the presence of an additional electrode ( 19 ). With this electrode ( 19 ), a switch-function is integrated into the device ( 11 ). Preferably, electrically conductive layers ( 13,23 ) are present for the protection of the ferromagnetic layers ( 1,2 ). The magnetoresistive device ( 11 ) is suitable for integration into an array so as to act as an MRAM device.

1 - 3 . (canceled)  
     
     
         4 . A device ( 11 ) comprising a substrate which carries a first and a second magnetic layer for providing a magnetoresistive effect, said first and second layer being interconnected by a non-magnetic space-layer, wherein the first and second layer are patterned and laterally spaced apart on the substrate, and the spacer layer comprises a semiconductor material with a chain-like molecular structure, and wherein an electrically conducting layer ( 13 ) is present between the magnetic layers ( 1 , 2 ) and the spacer layer ( 3 ).  
     
     
         5 . A device ( 11 ) as claimed in  claim 4 , characterized in that a tunnel barrier layer ( 21 ) is present between the electrically conducting layer ( 13 ) and the spacer layer ( 3 ).  
     
     
         6 . A device ( 11 ) as claimed in  claim 4 , characterized in that the magnetic layers ( 1 , 2 ) are present between the spacer layer ( 3 ) and the substrate ( 4 ).  
     
     
         7 . A device ( 11 ) comprising a substrate which carries a first and a second magnetic layer for providing a magnetoresistive effect, said first and second layer being interconnected by a non-magnetic space-layer, wherein the first and second layer are patterned and laterally spaced apart on the substrate, and the spacer layer comprises a semiconductor material with a chain-like molecular structure, and wherein an electrode ( 19 ) is present for influencing a charge distribution in a region of the spacer layer ( 3 ) located between the first and the second magnetic layer ( 1 , 2 ), the electrode being separated from the spacer layer ( 3 ) by a dielectric layer ( 18 ).  
     
     
         8 - 10 . (canceled)