Method for forming deposition film and method for producing photovoltaic device

Abstract

A method for forming a deposition film from an aqueous solution by electrochemical reaction includes the steps of: forming the targeted deposition film under primary deposition conditions; replacing at least part of members in contact with the solution or removing deposit on surfaces of the members; and depositing a film under secondary deposition conditions. These steps are performed in that order. Then, the deposition film is formed again under the primary deposition conditions. In the method, the resulting deposition film exhibits desired characteristics even after maintenance of the deposition apparatus.

1 . A method for forming a deposition film from an aqueous solution by electrochemical reaction, comprising the steps of: 
 forming the deposition film under primary deposition conditions;    performing one of replacing at least part of members in contact with the solution and removing deposit on surfaces of the members; and    depositing a film under secondary deposition conditions,    wherein the steps are performed in that order.    
     
     
         2 . The method according to  claim 1 , further comprising the step of forming again the deposition film under the primary deposition conditions after the step of deposition under the secondary conditions.  
     
     
         3 . The method according to  claim 1 , wherein the secondary deposition conditions allow a desired film to deposit on the members in contact with the solution.  
     
     
         4 . The method according to  claim 1 , wherein the deposition rate of the secondary deposition conditions is higher than the deposition rate of the primary deposition conditions.  
     
     
         5 . The method according to  claim 1 , wherein the deposition under the secondary deposition conditions is performed on a substrate different from the substrate used under the primary deposition conditions.  
     
     
         6 . A method for producing a photovoltaic device, comprising the steps of: 
 forming a zinc oxide film by the method as set forth in  claim 1;  and    forming a silicon-based semiconductor layer after the step of forming the zinc oxide film.