Method for edge sealing barrier films

Abstract

An edge-sealed barrier film composite. The composite includes a substrate and at least one initial barrier stack adjacent to the substrate. The at least one initial barrier stack includes at least one decoupling layer and at least one barrier layer. One of the barrier layers has an area greater than the area of one of the decoupling layers. The decoupling layer is sealed by the first barrier layer within the area of barrier material. An edge-sealed, encapsulated environmentally sensitive device is provided. A method of making the edge-sealed barrier film composite is also provided.

1 . A method of making an edge-sealed barrier film composite comprising: 
 providing a substrate; and    placing at least one initial barrier stack adjacent to the substrate, the at least one first initial barrier stack comprising at least one decoupling layer and at least one barrier layer, wherein a first decoupling layer of a first initial barrier stack has an area and wherein a first barrier layer of the first initial barrier stack has an area, the area of the first barrier layer being greater than the area of the first decoupling layer, and wherein the first decoupling layer is sealed by the first barrier layer within the area of the first barrier layer    
     
     
         2 . The method of  claim 1  wherein the first initial barrier stack includes at least two barrier layers, and wherein a second barrier layer has an area greater than the area of the first decoupling layer and wherein the first and second barrier layers seal the first decoupling layer between them.  
     
     
         3 . The method of  claim 1  wherein there are at least two initial barrier stacks, wherein a first barrier layer of a second initial barrier stack has an area greater than the area of the first decoupling layer of the first initial barrier stack and wherein the first barrier layer of the first initial barrier stack and the first barrier layer of the second initial barrier stack seal the first decoupling layer of the first initial barrier stack between them.  
     
     
         4 . The method of  claim 1  wherein placing the at least one initial barrier stack adjacent to the substrate comprises depositing the at least one initial barrier stack adjacent to the substrate.  
     
     
         5 . The method of  claim 4  wherein depositing the at least one initial barrier stack adjacent to the substrate comprises depositing at least one decoupling layer before depositing at least one barrier layer.  
     
     
         6 . The method of  claim 4  wherein depositing the at least one initial barrier stack adjacent to the substrate comprises depositing at least one barrier layer before depositing at least one decoupling layer.  
     
     
         7 . The method of  claim 4  wherein depositing the at least one initial barrier stack adjacent to the substrate comprises: 
 providing a mask with at least one opening;    depositing the first decoupling layer through the at least one opening in the mask; and    depositing the first barrier layer.    
     
     
         8 . The method of  claim 4  wherein depositing the at least one initial barrier stack adjacent to the substrate comprises: 
 depositing the first decoupling layer having an initial area of decoupling material which is greater than the area of the first decoupling layer;    etching the first decoupling layer having the initial area to remove a portion of the decoupling material so that the first decoupling layer has the area of the first decoupling layer; and    depositing the first barrier layer.    
     
     
         9 . The method of  claim 8  wherein etching the first decoupling layer comprises providing a solid mask over the first decoupling layer having the initial area of decoupling material, and etching the first decoupling layer having the initial area of decoupling material to remove the portion of the decoupling material outside the solid mask so that the first decoupling layer has the area of the first decoupling layer.  
     
     
         10 . The method of  claim 8  wherein the first decoupling layer is etched so that at least one edge of the first decoupling layer has a gradual slope.  
     
     
         11 . The method of  claim 8  wherein the first decoupling layer is etched using a reactive plasma.  
     
     
         12 . The method of  claim 11  wherein the reactive plasma is selected from O 2 , CF 4 , H 2 , or combinations thereof.  
     
     
         13 . The method of  claim 1  wherein at least one initial barrier stack includes at least two barrier layers.  
     
     
         14 . The method of  claim 1  wherein at least one initial decoupling layer includes at least two decoupling layers.  
     
     
         15 . The method of  claim 1  further comprising placing an environmentally sensitive device adjacent to the substrate before the at least one initial barrier stack is placed thereon.  
     
     
         16 . The method of  claim 1  further comprising placing an environmentally sensitive device adjacent to the at least one initial barrier stack after the at least one initial barrier stack is placed on the substrate.  
     
     
         17 . The method of  claim 16  further comprising placing at least one additional barrier stack adjacent to the environmentally sensitive device on a side opposite the substrate, the at least one additional barrier stack comprising at least one decoupling layer and at least one barrier layer, wherein a first decoupling layer of a first additional barrier stack has an area and wherein a first barrier layer of the first additional barrier stack has an area, the area of the first barrier layer of the first additional barrier stack being greater than the area of the first decoupling layer of the first additional barrier stack, and wherein the first decoupling layer of the first additional barrier stack is sealed by the first barrier layer of the first additional barrier stack within the area of the first barrier layer.  
     
     
         18 . The method of  claim 4  further comprising depositing a ridge on the substrate before depositing the at least one barrier stack adjacent to the substrate, the ridge interfering with the deposition of the first decoupling layer so that the area of the first barrier layer is greater than the area of the first decoupling layer and the first decoupling layer is sealed by the first barrier layer within the area of the first barrier layer.  
     
     
         19 . The method of  claim 1  wherein placing the at least one barrier stack adjacent to the substrate comprises laminating the at least one barrier stack adjacent to the substrate.  
     
     
         20 . The method of  claim 19  wherein the at least one barrier stack is laminated adjacent to the substrate using a process selected from heating, soldering, using an adhesive, ultrasonic welding, and applying pressure.