Low dielectric constant polyorganosilicon materials generated from polycarbosilanes

Abstract

Methods are presented herein for forming thermally stable, adhesive, low dielectric constant polyorganosilicon dielectric films for use as semiconductor insulators and as adhesion promoters as and in conjunction with low k materials. Surprisingly, the methods described herein can provide polyorganosilicon materials, coatings and films having very low dielectric constants that are generated from specified polycarbosilane starting materials employing wet coating and standard high energy generating processes, without the need for exotic production techniques or incurring disadvantages found in other low k dielectric film-forming methods. The polycarbosilane compounds, polyorganosilane compounds, adhesion promoter materials and layered materials disclosed herein can be used in any suitable semiconductor or electronic application, including semiconductor devices, electronic devices, films and coatings.

1 - 31 . (canceled)  
     
     
         32 . A method of preparing an adhesion promoter material comprising: 
 providing a polycarbosilane compound having the general formula:                          in which:    R 1 , R 7  and R 10  each independently represents a substituted or unsubstituted alkylene, cycloalkylene, or arylene group;    R 2 , R 3 , R 4 , R 5 , R 8  and R 9  each independently represents a hydrogen atom or a first organic group;    R 6  represents an organosilicon, a silanyl, a siloxyl, or a second organic group; and    x, y, z and w satisfying the conditions of [4<x+y+z+w<100,000], and y and z and w can collectively or independently be zero;    coating a surface with the polycarbosilane compound to produce a polycarbosilane-coated surface; and    subjecting the polycarbosilane-coated surface to an energy source to chemically react the polycarbosilane compound and to crosslink the polycarbosilane compound to form the adhesion promoter material that comprises a polyorganosilicon material, wherein the adhesion promoter material has a dielectric constant of less than 4.0.    
     
     
         33 . The method of  claim 32 , wherein the first organic group comprises a substituted alkyl group, a substituted alkenyl group, a substituted alkynyl group, a substituted aryl group, an unsubstituted alkyl group, an unsubstituted alkenyl group, an unsubstituted alkynyl group or an unsubstituted aryl group.  
     
     
         34 . The method of  claim 32 , wherein the second organic group comprises a substituted alkyl group, a substituted alkenyl group, a substituted alkynyl group, a substituted aryl group, an unsubstituted alkyl group, an unsubstituted alkenyl group, an unsubstituted alkynyl group or an unsubstituted aryl group.  
     
     
         35 . The method of  claim 32 , wherein the energy source comprises an extended source.  
     
     
         36 . The method of  claim 35 , wherein the extended source comprises an e-beam source or an ultraviolet source.  
     
     
         37 . The method of  claim 32 , wherein the surface comprises a substrate material.  
     
     
         38 . The method of  claim 32 , wherein the surface comprises at least two chemically or physically different materials.  
     
     
         39 . The method of  claim 32 , wherein the step of subjecting the polycarbosilane-coated surface to an energy source further comprises increasing the temperature plateaus step-wise from about 50° C. to about 450° C. in order to convert the polycarbosilane compound into the adhesion promoter material.  
     
     
         40 . The method of  claim 39 , wherein the step of increasing the temperature plateaus step-wise further comprises: 
 subjecting the polycarbosilane-coated surface to a first isothermal plateau of from about 100° C. to about 200° C.;    subjecting the surface to a second isothermal plateau from about 200° C. to about 350° C.; and    subjecting the surface to a final heating or curing stage at temperatures above about 400° C.    
     
     
         41 . The method of  claim 32 , wherein the step of subjecting the surface to an energy source comprises keeping the surface in a non oxidizing environment.  
     
     
         42 . The method of  claim 32 , wherein the dielectric constant is less than 3.0.