Light emitting devices

Abstract

Light-emitting devices, and related components, systems and methods are disclosed.

1 - 36 . (canceled)  
   
   
       37 . A device, comprising: 
 a multi-layer stack comprising: 
 a quantum well containing region;  
 a reflective layer supported by the quantum well containing region;  
 a gold-containing layer supported by the reflective layer; and  
 a bonding layer supported by the gold-containing layer.  
   
   
   
       38 . The method of  claim 37 , further comprising an n-doped layer supporting the quantum well containing region.  
   
   
       39 . The device of  claim 37 , wherein the multi-layer stack further comprises a p-doped layer between the quantum-well containing region and the reflective layer.  
   
   
       40 . The device of  claim 37 , wherein the multi-layer stack further comprises an ohmic contact layer between the p-doped layer and the reflective layer.  
   
   
       41 . The device of  claim 37 , wherein the multi-layer stack further comprises a diffusion barrier layer between the reflective layer and the gold-containing layer.  
   
   
       42 . The device of  claim 37 , wherein the multi-layer stack further comprises a current spreading layer between the n-doped layer and the quantum well containing region.  
   
   
       43 . The device of  claim 37 , wherein the bonding layer is in direct contact with the gold-containing layer.  
   
   
       44 . The device of  claim 37 , wherein the device is a device selected from the group consisting of light-emitting diodes, lasers, optical amplifiers, and combinations thereof.  
   
   
       45 . The device of  claim 37 , wherein the device comprises a light emitting diode.  
   
   
       46 . The device of  claim 37 , wherein the device is a device selected from the group consisting of OLEDs, flat surface-emitting LEDs, HBLEDs, and combinations thereof.  
   
   
       47 . A device, comprising: 
 a multi-layer stack comprising: 
 a substrate;  
 a quantum well containing region supported by the substrate;  
 a reflective layer supported by the quantum well containing region; and  
 a gold-containing layer supported by the reflective layer.  
   
   
   
       48 . The device of  claim 47 , wherein the multi-layer stack further comprises an n-doped layer between the substrate and the quantum-well containing region.  
   
   
       49 . The device of  claim 47 , wherein the multi-layer stack further comprises a p-doped layer between the quantum-well containing region and the reflective layer.  
   
   
       50 . The device of claim  59 , wherein the multi-layer stack further comprises an ohmic contact layer between the p-doped layer and the reflective layer.  
   
   
       51 . The device of  claim 47 , wherein the multi-layer stack further comprises a diffusion barrier layer between the reflective layer and the gold-containing layer.  
   
   
       52 . The device of  claim 48 , wherein the multi-layer stack further comprises a buffer layer between the substrate and the n-doped layer.  
   
   
       53 . The device of  claim 48 , wherein the multi-layer stack further comprises a current spreading layer between the n-doped layer and the quantum well containing region.  
   
   
       54 . The device of  claim 47 , wherein the multi-layer stack comprises first and second multi-layer stacks bonded with each other.  
   
   
       55 . The device of  claim 54 , wherein the second multi-layer stack comprises: 
 a submount; and    a bonding layer supported by the submount.    
   
   
       56 . The device of  claim 55 , wherein the second multi-layer stack further comprises a contact layer between the submount and the bonding layer.  
   
   
       57 . The device of  claim 55 , wherein the bonding layer is in direct contact with the gold-containing layer.