Decal transfer microfabrication

Abstract

A method of making a microstructure includes forming a pattern in a surface of a silicon-containing elastomer, oxidizing the pattern, contacting the pattern with a substrate; and bonding the oxidized pattern and the substrate such that the pattern and the substrate are irreversibly attached. The silicon-containing elastomer may be removably attached to a transfer pad.

1 - 48 . (canceled)  
     
     
         49 . A microstructure, comprising: 
 a substrate; and    a patterned layer comprising a silicon-containing elastomer on the substrate;    wherein the microstructure is formed by oxidizing the silicon-containing elastomer, contacting the oxidized elastomer with the substrate, and bonding the oxidized elastomer and the substrate such that the elastomer and substrate are irreversibly attached.    
     
     
         50 . The microstructure of  claim 49 , wherein a minimum feature size of the patterned layer is between 1 nanometer and 500 micrometers.  
     
     
         51 . The microstructure of  claim 49 , wherein a minimum feature size of the patterned layer is between 10 nm and 100 micrometers.  
     
     
         52 . The microstructure of  claim 49 , wherein the patterned layer comprises a discontinuous pattern.  
     
     
         53 . The microstructure of  claim 49 , further comprising a top layer comprising a silicon-containing elastomer, wherein the patterned layer is positioned between the substrate and the top layer.  
     
     
         54 . The microstructure of  claim 53 , wherein the patterned layer further defines channels between the substrate and the top layer.  
     
     
         55 . The microstructure of  claim 53 , wherein the top layer has a thickness between 100 nanometers and 500 micrometers.  
     
     
         56 . The microstructure of  claim 53 , wherein the top layer has a thickness between 500 nanometers and 100 micrometers.  
     
     
         57 . The microstructure of  claim 53 , further comprising a second top layer comprising a silicon-containing elastomer disposed over said top layer and a second patterned layer comprising a silicon-containing elastomer positioned between said top layer and the second top layer.  
     
     
         58 . The microstructure of  claim 49 , wherein the substrate is non-planar.  
     
     
         59 . The microstructure of  claim 58 , wherein the substrate is curved.  
     
     
         60 - 64 . (canceled)  
     
     
         65 . A microstructure, comprising: 
 a substrate;    a patterned layer comprising a silicon-containing elastomer on the substrate; and    a top layer comprising a silicon-containing elastomer;    wherein the patterned layer is positioned between the substrate and the top layer and further defines channels between the substrate and the top layer; and    wherein the top layer has a thickness between 100 nanometers and 500 micrometers.    
     
     
         66 . The microstructure of  claim 65 , wherein the top layer has a thickness between 500 nanometers and 100 micrometers.  
     
     
         67 . The microstructure of  claim 65 , further comprising a second top layer comprising a silicon-containing elastomer disposed over said top layer and a second patterned layer comprising a silicon-containing elastomer positioned between said top layer and the second top layer.  
     
     
         68 . The microstructure of  claim 65 , wherein the substrate is non-planar.  
     
     
         69 . The microstructure of  claim 65 , wherein the patterned layer and the substrate are irreversibly attached.  
     
     
         70 . A microstructure, comprising: 
 a substrate; and    a patterned layer comprising a silicon-containing elastomer on the substrate;    wherein the patterned layer comprises a discontinuous pattern having a minimum feature size less than 1,000 micrometers and having a thickness between 10 nanometers and 1 micrometer.    
     
     
         71 . The microstructure of  claim 70 , wherein the discontinuous pattern has a minimum feature size between 1 nanometer and 500 micrometers.  
     
     
         72 . The microstructure of  claim 70 , wherein the discontinuous pattern has a minimum feature size between 10 nanometers and 100 micrometers.  
     
     
         73 . The microstructure of  claim 70 , wherein the discontinuous pattern has a minimum feature size between 10 nanometers and 1 micrometer.  
     
     
         74 . The microstructure of  claim 70 , wherein the discontinuous pattern has a thickness between 10 nanometers and 100 nanometers.  
     
     
         75 . The microstructure of  claim 70 , wherein the patterned layer and the substrate are irreversibly attached.  
     
     
         76 . A microstructure, comprising: 
 a non-planar substrate; and    a patterned layer comprising a silicon-containing elastomer on the substrate;    wherein a minimum feature size of the patterned layer is less than 1,000 micrometers.    
     
     
         77 . The microstructure of  claim 76 , wherein the minimum feature size of the patterned layer is between 1 nanometer and 500 micrometers.  
     
     
         78 . The microstructure of  claim 76 , wherein the minimum feature size of the patterned layer is between 10 nm and 100 micrometers.  
     
     
         79 . The microstructure of  claim 76 , wherein the patterned layer and the substrate are irreversibly attached.  
     
     
         80 . The microstructure of  claim 76 , wherein the substrate is curved.