US2005202250A1PendingUtilityA1

High rate deposition of titanium dioxide

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Assignee: GEN ELECTRICPriority: Dec 20, 2002Filed: May 10, 2005Published: Sep 15, 2005
Est. expiryDec 20, 2022(expired)· nominal 20-yr term from priority
C23C 16/513C23C 16/405Y10T428/265Y10T428/31855Y10T428/31507
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Claims

Abstract

There is provided a structure. The structure comprises a substrate, and a titanium oxide layer disposed over the substrate. There is also provided a method of forming a titanium oxide coating on a substrate. The method includes generating a plasma; providing a first reactant, comprising titanium, and a second reactant, comprising oxygen, into the plasma stream extending to the substrate; and forming the titanium oxide coating on the substrate.

Claims

exact text as granted — not AI-modified
1 - 22 . (canceled)  
     
     
         23 . An apparatus for forming a titanium oxide film comprising: 
 a first reactant source containing TiCL 4 ;    a second reactant source containing water vapor;    a plasma stream generator; and    a substrate holder.

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