Light emitting devices

Abstract

Light-emitting devices; and related components, systems and methods are disclosed.

1 - 36 . (canceled)  
   
   
       37 . A method, comprising: 
 bonding a first multi-layer stack with a second multi-layer stack, wherein:    the first multi-layer stack comprises: 
 a submount; and  
 a bonding layer supported by the submount; and  
   the second multi-layer stack comprises: 
 a substrate; and  
 a quantum-well containing region supported by the substrate.  
   
   
   
       38 . The method of  claim 37 , wherein the second multi-layer stack further comprises an n-doped layer between the substrate and the quantum-well containing region.  
   
   
       39 . The method of  claim 37 , wherein the second multi-layer stack further comprises a p-doped layer supported by the quantum-well containing region.  
   
   
       40 . The method of  claim 39 , wherein the second multi-layer stack further comprises an ohmic contact layer supported by the p-doped layer.  
   
   
       41 . The method of  claim 39 , wherein the second multi-layer stack further comprises a reflective layer supported by the p-doped layer.  
   
   
       42 . The method of  claim 41 , wherein the second multi-layer stack further comprises a diffusion barrier layer supported by the reflective layer layer.  
   
   
       43 . The method of  claim 41 , wherein the second multi-layer stack further comprises a gold-containing layer supported by the diffusion barrier layer.  
   
   
       44 . The method of  claim 40 , wherein the second multi-layer stack further comprises a reflective layer supported by the ohmic contact layer.  
   
   
       45 . The method of  claim 37 , wherein the first multi-layer stack further comprises a contact layer between the submount and the bonding layer.  
   
   
       46 . The method of  claim 37 , wherein the first multi-layer stack further comprises a gold-containing layer between the submount and the bonding layer.  
   
   
       47 . The method of  claim 37 , further comprising annealing the first multi-layer stack prior to bonding the first multi-layer stack to the second multi-layer stack.  
   
   
       48 . The method of  claim 47 , wherein annealing the first multi-layer stack comprises annealing the first multi-layer stack at a temperature from about 300 degrees Celsius to about 600 degrees Celsius.  
   
   
       49 . The method of  claim 47 , wherein annealing the first multi-layer stack comprises annealing the first multi-layer stack for about 30 seconds to about 300 seconds.  
   
   
       50 . The method of  claim 37 , further comprising annealing the second multi-layer stack prior to bonding the first multi-layer stack with the second multi-layer stack.  
   
   
       51 . The method of  claim 50 , wherein annealing the second multi-layer stack comprises annealing the second multi-layer stack at a temperature from about 350 degrees Celsius to about 500 degrees Celsius.  
   
   
       52 . The method of  claim 50 , wherein annealing the second multi-layer stack comprises annealing the second multi-layer stack for about 30 seconds to about 300 seconds.  
   
   
       53 . The method of  claim 37 , wherein the bonding layer comprises tin.  
   
   
       54 . The method of  claim 37 , wherein the bonding layer comprises a gold/tin alloy.  
   
   
       55 . The method of  claim 43 , wherein the bonding layer comprises gold.  
   
   
       56 . The method of  claim 43 , wherein bonding the first multi-layer stack with the second multi-layer stack comprises bonding the bonding layer with the gold containing layer.  
   
   
       57 . The method of  claim 37 , further comprising processing the bonded first and second multilayer stacks to form a light emitting device.