Method of manufacturing a semiconductor device

Abstract

The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature above 100° C.

1 - 10 . (canceled)  
     
     
         11 . An apparatus for carrying out the step of removing silicon and nitrogen containing material by wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature about 100° C.  
     
     
         12 . An apparatus for wet etching silicon and nitrogen containing material from a substrate, the apparatus comprising: 
 a process chamber, the process chamber being arranged as a closed airtight system, wherein etching of the silicon and nitrogen containing material occurs in an aqueous solution;    a source of heat to set the temperature of the aqueous solution to a predetermined temperature; and    a source of pressurized inert gas to elevate the pressure of the process chamber, the pressure increasing the predetermined temperature.    
     
     
         13 . The apparatus as recited in  claim 12 , wherein the silicon and nitrogen containing material is silicon nitride or silicon oxynitride.  
     
     
         14 . The apparatus as recited in  claim 12 , wherein the silicon and nitrogen containing material is silicon-rich silicon nitride or silicon-rich silicon oxynitride.  
     
     
         15 . The apparatus as recited in  claim 12 , wherein the aqueous solution comprises hydrofluoric acid in a low concentration.  
     
     
         16 . The apparatus as recited in  claim 15 , wherein the concentration of the hydrofluoric acid is in a range from about 0.001M to about 0.1M.  
     
     
         16 . The apparatus as recited in  claim 15 , wherein the predetermined temperature is above 100° C.  
     
     
         17 . The apparatus as recited in  claim 16 , wherein the pressure increasing the predetermined temperate, raises the predetermined temperature from above 100° C. to about 130° C.  
     
     
         18 . The apparatus as recited in  claim 12 , wherein the source of pressurized inert gas is delivered using a hydraulic pump.  
     
     
         19 . The apparatus as recited in  claim 12 , wherein the process chamber is configured for multiple-wafer processing or single-wafer processing.  
     
     
         20 . The apparatus as recited in  claim 12 , wherein the process chamber includes a system for evacuating the aqueous solution so that dissolved oxygen is removed.  
     
     
         21 . The apparatus as recited in  claim 20 , wherein the system for evacuating the aqueous solution removes dissolved oxygen by exchanging the dissolved oxygen with an inert gas.