High performance vertically emitting lasers

Abstract

A semiconductor laser that has a reflective surface. The reflective surface redirects the light of an edge emitting laser diode to emit from the top or bottom surface of the diode. The laser may include a gain layer and a feedback layer located within a semiconductive die. The gain and feedback layers generate a laser beam that travels parallel to the surface of the die. The reflective surface reflects the laser beam 90 degrees so that the beam emits the die from the top or bottom surface. The reflective surface can be formed by etching a vicinally oriented III-V semiconductive die so that the reflective surface extends along a (111)A crystalline plane of the die.

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       17 . A method for forming a reflective surface in a semiconductor laser, comprising: 
 forming a first surface in a semiconductor wafer; and,    etching the first surface such that a thermodynamically stable crystalline plane of the semiconductor wafer is exposed as a reflective surface.    
   
   
       18 . The method of  claim 17 , wherein the first surface is 9.7 degrees from a (100) plane of the semiconductor wafer.  
   
   
       19 . The method of  claim 18 , wherein the thermodynamically stable crystalline plane is a (111) plane.  
   
   
       20 . The method of  claim 17 , wherein the thermodynamically stable crystalline plane is oriented at an angle of 45 degrees relative to the first surface.