Semiconductor device and manufacturing method thereof

Abstract

In manufacturing a semiconductor device, the first gettering layer is formed on the backside of a wafer, and the second gettering layers are then formed on the backside and side surfaces of a chip, allowing these gettering layers to serve as trapping sites against metallic contamination that generated after backside grinding in assembly processes.

1 . A semiconductor device on which a backside grinded chip is mounted, wherein the device comprises a gettering layer obtained by an impurity to a backside of the chip.  
   
   
       2 . A semiconductor device according to  claim 1 , further comprising a gettering layer on a side surface of the chip by introducing an impurity.  
   
   
       3 . A semiconductor device according to  claim 1 , wherein a depth of the gettering layer is virtually the same as an average depth of a damaged layer.  
   
   
       4 . A semiconductor device according to  claim 1 , wherein the impurity contains any of oxygen, argon, carbon, nitrogen, boron, phosphorous, arsenic, antimony, or a chemical compound thereof.  
   
   
       5 . A semiconductor device according to  claim 4 , wherein an oxygen concentration at the depth of the gettering layer is 1× 10   19 /cm 3  or higher but not exceeding 1×10 22 /cm 3 .  
   
   
       6 . A semiconductor device according to  claim 1 , wherein a maximum metal concentration within the gettering layer is 1×10 18 /cm 3  or lower.  
   
   
       7 . A manufacturing method of a semiconductor device, comprising: 
 a backside grinding step; and    a first gettering step for forming a first gettering layer on a backside of a wafer which is backside-grinded in the backside grinding step, wherein, in the first gettering step, the first gettering layer is formed by introducing an impurity into the backside of the wafer.    
   
   
       8 . A manufacturing method of a semiconductor device wherein, in the first gettering step according to  claim 7 , the first gettering layer is formed by applying a thermal treatment to the grinded backside of the wafer in an atmosphere containing an impurity at backside temperature ranging from 300 to 900 degrees centigrade with treatment time of 0.01 seconds or longer but not exceeding 10 seconds.  
   
   
       9 . A manufacturing method of a semiconductor device, wherein the thermal treatment according to  claim 8  is a treatment for irradiating laser beam irradiation to the backside of the chip.  
   
   
       10 . A manufacturing method of a semiconductor device wherein, in the first gettering step according to  claim 7 , the first gettering layer is formed by applying plasma treatment to the grinded backside of the wafer in an atmosphere containing the impurity at backside temperature ranging from 100 to 500 degrees centigrade with treatment time of 0.1 seconds or longer but not exceeding 100 seconds.  
   
   
       11 . A manufacturing method of a semiconductor device, wherein the impurity according to the  claim 7  contains any of oxygen, argon, carbon, nitrogen, boron, phosphorous, arsenic, antimony, or a chemical compound thereof.  
   
   
       12 . A manufacturing method of a semiconductor device, comprising: 
 a backside grinding step:    a dicing step; and    a second gettering step for forming second gettering layers on backside and side surface of a diced chip, wherein, in the second gettering step, the second gettering layers are formed by introducing an impurity to the backside and side surface of the chip.    
   
   
       13 . A manufacturing method of a semiconductor device wherein, in the second gettering step according to  claim 12 , the second gettering layers are formed by applying a thermal treatment to the backside and side surface of the chip in an atmosphere containing an impurity at backside temperature ranging from 300 to 900 degrees centigrade with treatment time of 0.01 second or longer but not exceeding 10 seconds.  
   
   
       14 . A manufacturing method of a semiconductor device, wherein the thermal treatment according to  claim 13  is performed by pressing the backside of the chip against a hot material.  
   
   
       15 . A manufacturing method of a semiconductor device wherein, in the second gettering step of  claim 12 , the second gettering layers are formed by applying plasma treatment to the backside and side surface of the chip in an atmosphere containing the impurity at backside temperature ranging from 100 to 500 degrees centigrade with treatment time of 0.1 seconds or longer but not exceeding 100 seconds.  
   
   
       16 . A manufacturing method of a semiconductor device, wherein the impurity according to  claim 12  contains any of oxygen, argon, carbon, nitrogen, boron, phosphorous, arsenic, antimony, or a chemical compound thereof.  
   
   
       17 . A manufacturing method of a semiconductor device, comprising; the backside grinding step according to  claim 7  for performing grinding in the state where there is no metallic contamination of a transportation system, a grinding blade and grinding water used for a grinding apparatus.  
   
   
       18 . A manufacturing method of a semiconductor device, comprising; the backside grinding step according to  claim 7  for performing at least last grinding in the grinding processes in the state of using a copper-free adhesive for bonding a grinding blade and a grinding wheel.  
   
   
       19 . A manufacturing method of a semiconductor device, comprising; the backside grinding step according to  claim 7  for bonding a grinding blade and a grinding wheel in the state of using a copper-free adhesive, after cleaning to remove copper on a grinded surface prior to each grinding in a plurality of grinding processes.