US2005215183A1PendingUtilityA1

Chemical-mechanical planarization composition having PVNO and associated method for use

48
Individually held — no corporate assignee on recordPriority: Oct 10, 2003Filed: Apr 8, 2005Published: Sep 29, 2005
Est. expiryOct 10, 2023(expired)· nominal 20-yr term from priority
Inventors:Junaid Ahmed SiddiquiBin Hu
H10P 52/403C09G 1/02C09K 3/1463
48
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, a dielectric protector comprising a polyvinylpyridine-N-oxide polymer, an oxiding agent, and water. The composition affords minimization of local erosion effects and possesses high selectivities for metal and barrier material removal in relation to dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 1 copper CMP processes and step 2 copper CMP processes).

Claims

exact text as granted — not AI-modified
1 . A step 2 copper chemical-mechanical planarization composition comprising: 
 a) an abrasive;    b) a dielectric protector comprising a polyvinylpyridine-N-oxide polymer;    c) an oxidizing agent; and    d) water.    
   
   
       2 . The step 2 copper chemical-mechanical planarization composition of  claim 1  wherein the abrasive is a colloidal abrasive.  
   
   
       3 . The step 2 copper chemical-mechanical planarization composition of  claim 1  wherein the abrasive is silica or surface-modified silica.  
   
   
       4 . The step 2 copper chemical-mechanical planarization composition of  claim 1  wherein the abrasive is boron surface-modified silica or aluminate surface-modifed silica.  
   
   
       5 . The step 2 copper chemical-mechanical planarization composition of  claim 1  wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level in the composition ranging from 0.05 weight % to 3 weight %.  
   
   
       6 . The step 2 copper chemical-mechanical planarization composition of  claim 5  wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level in the composition ranging from 0.05 weight % to 3 weight % and the Polyvinylpyridine-N-oxide polymer:Abrasive ratio is greater than 0.05.  
   
   
       7 . The step 2 copper chemical-mechanical planarization composition of  claim 1  wherein the polyvinylpyridine-N-oxide polymer is present in an amount sufficient to protect the dielectric.  
   
   
       8 . The step 2 copper chemical-mechanical planarization composition of  claim 1  wherein the polyvinylpyridine-N-oxide polymer is a homopolymer of polyvinylpyridine-N-oxide.  
   
   
       9 . The step 2 copper chemical-mechanical planarization composition of  claim 1  wherein the polyvinylpyridine-N-oxide polymer has a number average molecular weight ranging from 25,000 Daltons to 250,000 Daltons.  
   
   
       10 . The step 2 copper chemical-mechanical planarization composition of  claim 1  wherein the oxidizing agent is hydrogen peroxide.  
   
   
       11 . The step 2 copper chemical-mechanical planarization composition of  claim 10  wherein hydrogen peroxide is present at a level ranging from 0.05 weight % to 6 weight % of the total weight of the composition.  
   
   
       12 . The step 2 copper chemical-mechanical planarization composition of  claim 1  wherein the composition has a pH ranging from 6 to 10.  
   
   
       13 . The step 2 copper chemical-mechanical planarization composition of  claim 1  further comprising d) a surfactant.  
   
   
       14 . The step 2 copper chemical-mechanical planarization composition of  claim 13  wherein the surfactant is a nonionic surfactant.  
   
   
       15 . The step 2 copper chemical-mechanical planarization composition of  claim 1  further comprising e) a corrosion inhibitor.  
   
   
       16 . The step 2 copper chemical-mechanical planarization composition of  claim 1  wherein the polyvinylpyridine-N-oxide polymer is solubilized and/or dispersed in water.  
   
   
       17 . A method of step 2 copper chemical-mechanical planarization comprising the steps of: 
 A) placing a substrate comprising copper, at least one dielectric material and at least one barrier material in contact with a polishing pad;    B) delivering a chemical-mechanical planarization composition comprising a) an abrasive; b) a dielectric protector comprising a polyvinylpyridine-N-oxide polymer; c) an oxidizing agent; and d) water; and    C) planarizing the substrate with the step 2 copper chemical-mechanical planarization composition.    
   
   
       18 . The method of  claim 17  wherein the abrasive in the composition employed in the method is a colloidal abrasive.  
   
   
       19 . The method of  claim 18  wherein the abrasive is silica or surface-modified silica.  
   
   
       20 . The method of  claim 18  wherein the abrasive is boron surface-modified silica or aluminate surface-modifed silica.  
   
   
       21 . The method of  claim 17  wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level ranging from 0.05 weight % to 3 weight % in the composition employed in the method.  
   
   
       22 . The method of  claim 21  wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level ranging from 0.05 weight % to 3 weight % in the composition employed in the method and the Polyvinylpyridine-N-oxide polymer:Abrasive ratio is greater than 0.05.  
   
   
       23 . The method of  claim 17  wherein the polyvinylpyridine-N-oxide polymer in the composition employed in the method is present in an amount sufficient to protect the dielectric.  
   
   
       24 . The method of  claim 17  wherein the polyvinylpyridine-N-oxide polymer is a homopolymer of polyvinylpyridine-N-oxide.  
   
   
       25 . The method of  claim 17  wherein the polyvinylpyridine-N-oxide polymer in the composition employed in the method has a number average molecular weight ranging from 25,000 Daltons to 250,000 Daltons.  
   
   
       26 . The method of  claim 17  wherein the oxidizing agent in the composition employed in the method is hydrogen peroxide.  
   
   
       27 . The method of  claim 17  wherein hydrogen peroxide is present at a weight percent level ranging from 0.05 weight % to 6 weight % of the total weight of the composition employed in the method.  
   
   
       28 . The method of  claim 17  wherein the composition employed in the method has a pH ranging from 6 to 10.  
   
   
       29 . The method of  claim 17  wherein the composition employed in the method further comprises d) a surfactant.  
   
   
       30 . The method of  claim 29  wherein the surfactant is a nonionic surfactant.  
   
   
       31 . The method of  claim 17  wherein the composition employed in the method further comprises d) a corrosion inhibitor.  
   
   
       32 . The method of  claim 17  wherein the polyvinylpyridine-N-oxide polymer in the composition employed in the method is solubilized and/or dispersed in water.  
   
   
       33 . A step 1 copper chemical-mechanical planarization composition comprising: 
 a) an abrasive;    b) a dielectric protector comprising apolyvinylpyridine-N-oxide polymer;    c) an oxidizing agent; and    d) water.    
   
   
       34 . The step 1 copper chemical-mechanical planarization composition of  claim 33  wherein the abrasive is a colloidal abrasive.  
   
   
       35 . The step 1 copper chemical-mechanical planarization composition of  claim 33  wherein the abrasive is silica or surface-modified silica.  
   
   
       36 . The step 1 copper chemical-mechanical planarization composition of  claim 33  wherein the abrasive is boron surface-modified silica or aluminate surface-modifed silica.  
   
   
       37 . The step 1 copper chemical-mechanical planarization composition of  claim 33  wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level in the composition ranging from 0.01 weight % to 0.75 weight %.  
   
   
       38 . The step 1 copper chemical-mechanical planarization composition of  claim 37  wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level in the composition ranging from 0.01 weight % to 0.75 weight % and the Polyvinylpyridine-N-oxide polymer:Abrasive ratio is greater than 0.05.  
   
   
       39 . The step 1 copper chemical-mechanical planarization composition of  claim 33  wherein the polyvinylpyridine-N-oxide polymer is present in an amount sufficient to protect the dielectric.  
   
   
       40 . The step 1 copper chemical-mechanical planarization composition of  claim 33  wherein the polyvinylpyridine-N-oxide polymer is a homopolymer of polyvinylpyridine-N-oxide.  
   
   
       41 . The step 1 copper chemical-mechanical planarization composition of  claim 33  wherein the polyvinylpyridine-N-oxide polymer has a number average molecular weight ranging from 25,000 Daltons to 250,000 Daltons.  
   
   
       42 . The step 1 copper chemical-mechanical planarization composition of  claim 33  wherein the oxidizing agent is hydrogen peroxide.  
   
   
       43 . The step 1 copper chemical-mechanical planarization composition of  claim 42  wherein hydrogen peroxide is present at a weight percent level ranging from 0.05 weight % to 6 weight % of the total weight of the composition.  
   
   
       44 . The step 1 copper chemical-mechanical planarization composition of  claim 33  wherein the composition has a pH ranging from 7 to 9.  
   
   
       45 . The step 1 copper chemical-mechanical planarization composition of  claim 33  further comprising e) a surfactant.  
   
   
       46 . The step 1 copper chemical-mechanical planarization composition of  claim 45  wherein the surfactant is a nonionic surfactant.  
   
   
       47 . The step 1 copper chemical-mechanical planarization composition of  claim 33  further comprising e) a corrosion inhibitor.  
   
   
       48 . The step 1 copper chemical-mechanical planarization composition of  claim 33  wherein the polyvinylpyridine-N-oxide polymer is solubilized and/or dispersed in water.  
   
   
       49 . A method of step 1 copper chemical-mechanical planarization comprising the steps of: 
 A) placing a substrate comprising copper, at least one dielectric material and at least one barrier material in contact with a polishing pad;    B) delivering a chemical-mechanical planarization composition comprising a) an abrasive; b) a dielectric protector comprising a polyvinylpyridine-N-oxide polymer; c) an oxidizing agent; and d) water; and    C) planarizing the substrate with the step 1 copper chemical-mechanical planarization composition.    
   
   
       50 . The method of  claim 49  wherein the abrasive in the composition employed in the method is a colloidal abrasive.  
   
   
       51 . The method of  claim 49  wherein the abrasive is silica or surface-modified silica.  
   
   
       52 . The method of  claim 49  wherein the abrasive is boron surface-modified silica or aluminate surface-modifed silica.  
   
   
       53 . The method of  claim 49  wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level in the composition employed in the method ranging from 0.01 weight % to 0.75 weight %.  
   
   
       54 . The method of  claim 53  wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level in the composition employed in the method ranging from 0.01 weight % to 0.75 weight % and the Polyvinylpyridine-N-oxide polymer:Abrasive ratio is greater than 0.05.  
   
   
       55 . The method of  claim 49  wherein the polyvinylpyridine-N-oxide polymer in the composition employed in the method is present in an amount sufficient to protect the dielectric.  
   
   
       56 . The method of  claim 49  wherein the polyvinylpyridine-N-oxide polymer is a homopolymer of polyvinylpyridine-N-oxide.  
   
   
       57 . The method of  claim 49  wherein the polyvinylpyridine-N-oxide polymer in the composition employed in the method has a number average molecular weight ranging from 25,000 Daltons to 250,000 Daltons.  
   
   
       58 . The method of  claim 49  wherein the oxidizing agent in the composition employed in the method is hydrogen peroxide.  
   
   
       59 . The method of  claim 49  wherein hydrogen peroxide is present at a weight percent level in the composition employed in the method ranging from 0.05 weight % to 6 weight % of the total weight of the composition.  
   
   
       60 . The method of  claim 49  wherein the composition has a pH ranging from 7 to 9.  
   
   
       61 . The method of  claim 49  wherein the composition employed in the method further comprises D) a surfactant.  
   
   
       62 . The method of  claim 61  wherein the surfactant is a nonionic surfactant.  
   
   
       63 . The method of  claim 49  wherein the composition employed in the method further comprises D) a corrosion inhibitor.  
   
   
       64 . The method of  claim 49  wherein the polyvinylpyridine-N-oxide polymer in the composition employed in the method is solubilized and/or dispersed in water.

Join the waitlist — get patent alerts

Track US2005215183A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.