Method and semiconductor device having copper interconnect for bonding

Abstract

An improved wire bond with the bond pads of semiconductor devices and the lead fingers of lead frames or an improved conductor lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond wherein the bond pad on a surface of the semiconductor device comprises a layer of copper and at least one layer of metal and/or at least a barrier layer of material between the copper layer and one layer of metal on the copper layer to form a bond pad.

1 . A semiconductor device having a substrate portion having an upper surface and a lower surface comprising: 
 a layer of copper on a portion of the upper surface and the lower surface of the substrate portion in contact therewith; and    at least one layer of metal on at least a portion of the layer of copper forming at least a portion of one bond pad having at least one layer of metal thereon.    
     
     
         2 . The semiconductor device of  claim 1 , further comprising: 
 one end of a wire connected to the at least one layer of metal using a bond wire.    
     
     
         3 . The semiconductor device of  claim 1 , wherein the at least one layer of metal comprises one of silver metal, gold metal, a silver alloy metal, a gold alloy metal, a silver and gold alloy metal, palladium metal, a noble metal, a noble metal alloy, nickel metal, and a nickel metal alloy.  
     
     
         4 . The semiconductor device of  claim 1 , further comprising: 
 depositing at least one other layer of metal on a portion of the at least one layer of metal.    
     
     
         5 . The semiconductor device of  claim 4 , wherein the at least one layer of metal and the at least one other layer of metal comprise one of a silver metal alloy and a nickel metal alloy, a nickel metal alloy and a silver metal alloy, a silver metal and a nickel metal, and nickel metal and a silver metal.  
     
     
         6 . The semiconductor device of  claim 1 , wherein the layer of copper comprises a zincated copper layer.  
     
     
         7 . The semiconductor device of  claim 4 , wherein the at least one layer of metal comprises a barrier layer of metal and the at least one other layer of metal comprises an adhesion promoting layer of metal for wire bonding thereto.  
     
     
         8 . The semiconductor device of  claim 1 , further comprising: 
 depositing an insulative coating on a portion of one of the upper surface and the lower surface of the substrate portion.    
     
     
         9 . A semiconductor device having a substrate portion having an upper surface and a lower surface comprising: 
 a layer of copper on a portion of the upper surface and the lower surface of the substrate portion in contact therewith;    a barrier layer on at least a portion of the layer of copper; and    at least one layer of metal on at least a portion of the barrier layer forming at least one bond pad having at least one layer of metal thereon on one surface of the upper surface and the lower surface of the substrate portion.    
     
     
         10 . The semiconductor device of  claim 9 , further comprising: 
 one end of a wire connected to the at least one layer of metal on at least a portion of the barrier layer using a bond wire.