Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors

Abstract

A chemical vapor deposition (CVD) apparatus usable in the manufacture of a superconducting conductor on an elongate substrate is disclosed. The CVD apparatus includes a reactor, at least one substrate heater, and at least one precursor injector having a longitudinal flow distributor. Optionally, the CVD apparatus may include one of a transverse lateral flow restrictor, a shield for protecting a low-temperature region of the substrate, and both.

1 . A chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductor on an elongate substrate, the CVD apparatus comprising: 
 a) a reactor;    b) at least one substrate heater; and    c) at least one precursor injector having a longitudinal flow distributor.    
   
   
       2 . The CVD apparatus according to  claim 1 , wherein the at least one substrate heater further includes at least one susceptor.  
   
   
       3 . The CVD apparatus according to  claim 2 , wherein the susceptor has a radius of curvature for accommodating the elongate substrate.  
   
   
       4 . The CVD apparatus according to  claim 1 , wherein the substrate heater is a multiple-zone heater.  
   
   
       5 . The CVD apparatus according to  claim 4 , further including a surface heater.  
   
   
       6 . The CVD apparatus according to  claim 5 , wherein the surface heater is positioned so as to maintain a temperature at the growth surface on the substrate at a deposition temperature.  
   
   
       7 . The CVD apparatus according to  claim 1 , wherein the substrate heater is a single-zone heater.  
   
   
       8 . The CVD apparatus according to  claim 7 , further including a surface heater.  
   
   
       9 . The CVD apparatus according to  claim 8 , wherein the surface heater is positioned so as to maintain a temperature at a growth surface on the substrate at a deposition temperature.  
   
   
       10 . The CVD apparatus according to  claim 8 , wherein the surface heater is a lamp.  
   
   
       11 . The CVD apparatus according to  claim 1 , wherein the substrate heater comprises at least one heat source.  
   
   
       12 . The CVD apparatus according to  claim 11 , wherein the heat source comprises a plurality of lamps.  
   
   
       13 . The CVD apparatus according to  claim 11 , wherein the heat source is at least one resistance heating element.  
   
   
       14 . The CVD apparatus according to  claim 1 , further including a shield for protecting a low-temperature region of the substrate.  
   
   
       15 . The CVD apparatus according to  claim 14 , wherein the substrate shield is positioned so that the surface temperature over the deposit coating does not exceed the deposition temperature.  
   
   
       16 . The CVD apparatus according to  claim 1 , further including a precursor supply system.  
   
   
       17 . The CVD apparatus according to  claim 16 , further including a precursor source.  
   
   
       18 . The CVD apparatus according to  claim 17 , wherein the precursor source is a solid.  
   
   
       19 . The CVD apparatus according to  claim 18 , wherein the solid precursor source is a powder.  
   
   
       20 . The CVD apparatus according to  claim 17 , wherein the precursor source is a liquid.  
   
   
       21 . The CVD apparatus according to  claim 20 , wherein the liquid is a solution of THS and thd.  
   
   
       22 . The CVD apparatus according to  claim 16 , further including a delivery mechanism.  
   
   
       23 . The CVD apparatus according to  claim 22 , wherein the delivery mechanism comprises a pump when the precursor source comprises a liquid.  
   
   
       24 . The CVD apparatus according to  claim 22 , wherein the delivery mechanism comprises one of a mill and a conveyor when the precursor source comprises a solid.  
   
   
       25 . The precursor delivery system according to  claim 16 , further including a vaporizer.  
   
   
       26 . The CVD apparatus according to  claim 25 , further including a carrier fluid supply.  
   
   
       27 . The CVD apparatus according to  claim 1 , further including an exhaust system.  
   
   
       28 . The CVD apparatus according to  claim 27 , wherein the exhaust system is for removing reaction products from the elongate substrate surface.  
   
   
       29 . The CVD apparatus according to  claim 28 , wherein the exhaust system is a vacuum system.  
   
   
       30 . The CVD apparatus according to  claim 1 , further including a gas supply.  
   
   
       31 . The CVD apparatus according to  claim 30 , further including a mass flow control mechanism.  
   
   
       32 . The CVD apparatus according to  claim 30 , further including a carrier fluid supplied to the precursor supply system.  
   
   
       33 . The CVD apparatus according to  claim 32 , wherein the carrier fluid is an inert gas.  
   
   
       34 . The CVD apparatus according to  claim 33 , wherein the inner gas is argon.  
   
   
       35 . The CVD apparatus according to  claim 30 , wherein the gas is a reactive gas.  
   
   
       36 . The CVD apparatus according to  claim 35 , wherein the reactive gas is one of oxygen and nitrogen oxide.  
   
   
       37 . The CVD apparatus according to  claim 1 , further including a tape handler.  
   
   
       38 . The CVD apparatus according to  claim 37 , wherein the tape handler comprises a tape translation mechanism.  
   
   
       39 . The CVD apparatus according to  claim 38 , wherein the tape translation mechanism comprises at least one of a conveyor, reel-to-reel unit, robotic translator, and combinations thereof.  
   
   
       40 . The CVD apparatus according to  claim 1 , further including at least one controller in communication with at least the substrate heater.  
   
   
       41 . The CVD apparatus according to  claim 40 , further including at least one sensor in communication with the at least one controller.  
   
   
       42 . The CVD apparatus according to  claim 41 , wherein at least one sensor includes any one of a flow meter, a species monitor, a filament state monitor, a deposition sensor, a temperature sensor, a pressure sensor, a vacuum sensor, a speed monitor, and combinations thereof.  
   
   
       43 . The CVD apparatus according to  claim 40 , wherein the at least one controller is for regulating the at least one precursor injector.  
   
   
       44 . The tape-manufacturing system according to  claim 40 , wherein the at least one controller is for regulating the at least one precursor supply system.  
   
   
       45 . The tape-manufacturing system according to  claim 40 , wherein the at least one controller regulates a translational speed of the elongate substrate.  
   
   
       46 . A precursor injector usable in a reactor of a chemical vapor deposition (CVD) apparatus in combination with a substrate heater and usable in the manufacture of superconducting conductor on an elongate substrate, the precursor injector comprising: 
 a) a longitudinal flow distributor; and    b) a transverse lateral flow restrictor.    
   
   
       47 . The precursor injector according to  claim 46 , wherein the longitudinal flow distributor includes an entrance, a receiver volume, a distributor, a distribution volume, and a plurality of exits.  
   
   
       48 . The precursor injector according to  claim 47 , wherein the entrance is a tube.  
   
   
       49 . The precursor injector according to  claim 47 , wherein the distributor is a perforated member.  
   
   
       50 . The precursor injector according to  claim 49 , wherein the perforated member has a density of between about  1  to  10  holes per inch.  
   
   
       51 . The precursor injector according to  claim 47 , wherein the distribution volume is less than the receiver volume.  
   
   
       52 . The precursor injector according to  claim 47 , wherein the receiver volume is greater than a total volume of perforations in the perforated member.  
   
   
       53 . The precursor injector according to  claim 47 , wherein a total volume of the perforations is greater than the distribution volume.  
   
   
       54 . The precursor injector according to  claim 48 , wherein there is an equal volume of perforations on both sides of the tube, and the tube is substantially in the center of the injector.  
   
   
       55 . The precursor injector according to  claim 54 , wherein the volume of perforations increases with an increasing direction from the tube.  
   
   
       56 . The precursor injector according to  claim 55 , wherein the volume of perforations is increased by increasing the diameter of the perforations.  
   
   
       57 . The precursor injector according to  claim 55 , wherein the volume of perforations is increased by increasing the thickness of the perforated member.  
   
   
       58 . The precursor injector according to  claim 47 , further including vapor delivery.  
   
   
       59 . The precursor injector according to  claim 58 , wherein a volume of the vapor delivery is greater than the receiver volume.  
   
   
       60 . The precursor injector according to  claim 46 , further including a temperature regulation system.  
   
   
       61 . The precursor injector according to  claim 60 , wherein the temperature regulator further includes a plurality of temperature sensors.  
   
   
       62 . The precursor injector according to  claim 60 , wherein the temperature regulation system includes a heat source.  
   
   
       63 . The precursor injector according to  claim 60 , wherein the temperature regulation system includes a cooler.  
   
   
       64 . The precursor injector according to  claim 46 , wherein the lateral flow restrictor is a physical extension of the precursor injector.  
   
   
       65 . The precursor injector according to  claim 46 , wherein the lateral flow restrictor is a gas curtain emanating from the injector.  
   
   
       66 . The precursor injector according to  claim 46 , wherein the lateral flow restrictor is spaced relative to the substrate heater in a manner to permit exhausting of reaction products from the surface of the elongate substrate.  
   
   
       67 . A chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductor on an elongate substrate, the CVD apparatus comprising: 
 a) a reactor;    b) at least one substrate heater; and    c) at least one precursor injector having a longitudinal flow distributor and a transverse lateral flow restrictor; and    d) a shield for protecting a low-temperature region of the substrate.    
   
   
       68 . The CVD apparatus according to  claim 67 , wherein the substrate shield is positioned so that the surface temperature over deposit coating does not exceed the deposition temperature.  
   
   
       69 . A method for manufacturing a high temperature superconducting conductor, said method comprising the steps of: 
 a) providing an elongate substrate to a reactor;    b) heating at least a portion of the substrate to a temperature sufficient to facilitate the formation of one of a predecessor to a superconducting material and a superconducting material; and    c) longitudinally distributing a flow of at least one precursor so as to communicate the at least one precursor with the heated at least a portion of the substrate so as to permit the formation of one of a predecessor to a superconducting material and a superconducting material.    
   
   
       70 . A method for manufacturing a high temperature superconducting conductor, said method comprising the steps of: 
 a) providing an elongate substrate to a reactor;    b) heating at least a portion of the substrate to a temperature sufficient to facilitate the formation of one of a predecessor to a superconducting material and a superconducting material; and    c) longitudinally distributing a flow of at least one precursor; and    d) transversely restricting the flow of the at least one precursor so as to communicate the at least one precursor with the heated at least a portion of the substrate so as to permit the formation of one of a predecessor to a superconducting material and a superconducting material.    
   
   
       71 . A method for manufacturing a high temperature superconducting conductor, said method comprising the steps of: 
 a) providing an elongate substrate to a reactor;    b) heating at least a portion of the substrate to a temperature sufficient to facilitate the formation of one of a predecessor to a superconducting material and a superconducting material;    c) longitudinally distributing a flow of at least one precursor;    d) transversely restricting the flow of the at least one precursor;    e) shielding a low-temperature region of the substrate so as to communicate the at least one precursor with the heated at least a portion of the substrate so as to permit the formation of one of a predecessor to a superconducting material and a superconducting material.    
   
   
       72 . A high temperature superconducting conductor comprising: 
 a) an elongate substrate;    b) at least one oxide superconductor layer supported by said elongate substrate; and    c) an Ic of over about 190 A/cm-width.