Semiconductor constructions

Abstract

The invention includes methods by which the size and shape of photoresist-containing masking compositions can be selectively controlled after development of the photoresist. For instance, photoresist features can be formed over a substrate utilizing a photolithographic process. Subsequently, at least some of the photoresist features can be exposed to actinic radiation to cause release of a substance from the photoresist. A layer of material is formed over the photoresist features and over gaps between the features. The material has a solubility in a solvent which is reduced when the material interacts with the substance released from the photoresist. The solvent is utilized to remove portions of the material which are not sufficiently proximate to the photoresist to receive the substance, selectively relative to portions which are sufficiently proximate to the photoresist. The photoresist features can be exposed to the actinic radiation either before or after forming the layer of material.

1 - 44 . (canceled)  
   
   
       45 . A semiconductor construction, comprising: 
 a semiconductor substrate;    a plurality of first material lines over the substrate; and    second material shells around the first material lines, some of the second material shells having a first thickness and others having a second thickness different than the first thickness; the shells and lines together forming a plurality of spaced-apart horizontally-elongated structures over the substrate.    
   
   
       46 . The construction of  claim 45  wherein the first material consists of photoresist and the second material consists of one or more compositions cross-linked by one or more substances released from the photoresist.  
   
   
       47 . The construction of  claim 45  wherein a single line has a first thickness shell along one segment and a second thickness shell along another segment adjacent the first segment.  
   
   
       48 . The construction of  claim 45  wherein the second thickness is greater than the first thickness, and wherein a single line has a second thickness shell along a segment that is between a pair of segments that have first thickness shells along them.  
   
   
       49 . The construction of  claim 45  wherein: 
 the lines have uppermost surfaces and sidewall surfaces extending from the uppermost surfaces to the substrate;    the shells extend along the sidewall surfaces and over the uppermost surfaces;    the second thickness is greater than the first thickness; and    the shells having said second thickness have a bread loaf appearance in at least one cross-sectional view whereby the shells are thicker proximate the uppermost surfaces of the lines than proximate the substrate.    
   
   
       50 . The construction of  claim 49  wherein the first material consists of photoresist and the second material consists of one or more compositions cross-linked by one or more substances released from the photoresist.  
   
   
       51 . A semiconductor construction, comprising: 
 a semiconductor substrate;    a plurality of photoresist lines over the substrate, the lines having uppermost surfaces and sidewall surfaces extending from the uppermost surfaces to the substrate;    second material layers around the uppermost surfaces and sidewall surfaces of the photoresist lines, some of the second material layers having a first thickness and others having a second thickness greater than the first thickness; the second material consisting of one or more compositions cross-linked by one or more substances released from the photoresist; and    the layers and lines together forming a plurality of spaced-apart horizontally-elongated structures over the substrate; distances between adjacent spaced-apart horizontally-elongated structures having the second thickness second material layers being less than the distances between adjacent spaced apart horizontally-elongated structures having the first thickness second material layers.    
   
   
       52 . The construction of  claim 51  wherein the layers having said second thickness have a bread loaf appearance in at least one cross-sectional view whereby the layers are thicker proximate the uppermost surfaces of the lines than proximate the substrate.  
   
   
       53 . The construction of  claim 51  wherein the first thickness is greater than about 5 Å.  
   
   
       54 . The construction of  claim 51  wherein the first thickness is greater than about 50 Å.  
   
   
       55 . The construction of  claim 51  wherein a single line has a first thickness second material layer along one segment and a second thickness second material layer along another segment adjacent the first segment.  
   
   
       56 . The construction of  claim 51  wherein a single line has a second thickness second material layer along a segment that is between a pair of segments that have first thickness second material layers along them.