Semiconductor device and display apparatus

Abstract

A semiconductor device for individually controlling an element to be driven, such as an electroluminescence element, includes a switching TFT which operates when a selection signal is applied to its gate and which also captures a data signal, and an element-driving TFT in which its drain is connected with a drive power source, its source is connected with the element to be driven, gate receives a data signal supplied from the switching TFT, for controlling electric power supplied from the drive power source to the element to be driven. The semiconductor device further includes a storage capacitor having a first electrode connected with the switching TFT and with the gate of the element-driving TFT and a second electrode connected between the source of the element-driving TFT and the element to be driven, for holding the gate-source voltage of the element-driving TFT in accordance with the data signal, and a switching element for controlling the potential of the second electrode of the storage capacitor. With such a configuration, all the above-described switches can be formed by TFTs of the same conductivity type and reliable supply of electric power to the element to be driven can be assured.

1 - 22 . (canceled)  
   
   
       23 . A display apparatus including a plurality of electroluminescence elements arranged in a matrix, wherein 
 a driving transistor is provided corresponding to each electroluminescence element for controlling a drive current to be supplied to the electroluminescence element, and    the driving transistor is an n-channel transistor and includes an LD region in which a low concentration of impurities is doped, between a channel region and each of source and drain regions in which a high concentration of impurities is doped.    
   
   
       24 . (canceled)  
   
   
       25 . A display apparatus including a plurality of electroluminescence elements arranged in a matrix, wherein 
 a driving transistor is provided corresponding to each electroluminescence element for controlling a drive current to be supplied to the electroluminescence element,    the driving transistor is an n-channel transistor and includes an LD region in which a low concentration of impurities are doped, between a channel region and each of source and drain regions in which a high concentration of impurities are doped, and    the LD region of the driving transistor is made larger than an LD region of an n-channel transistor at least in a peripheral circuit.