Semiconductor device

Abstract

A semiconductor device comprises a semiconductor substrate that is provided with an integrated circuit; a multi-layered member that is installed in the semiconductor substrate, including a plurality of conductive members and an insulation member; and an external terminal formed on a part of the surface of the multi-layered member. A pair of the conductive members contacts with the upper surface and the lower surface of the insulation member directly under the external terminal, includes a portion where the conductive members are overlapped each other, and are electrically coupled to each other.

1 . A semiconductor device comprising: 
 a semiconductor substrate that is provided with an integrated circuit;    a multi-layered member that is formed on the semiconductor substrate, including a plurality of conductive members and an insulation member; and    an external terminal formed on the surface of the multi-layered member; wherein    a pair of the conductive members contacts with the upper surface and the lower surface of the insulation member directly under the external terminal; includes a portion where the conductive members are overlapped each other; and are electrically coupled to each other.    
   
   
       2 . A semiconductor device comprising: 
 a semiconductor substrate that is provided with an integrated circuit;    a multi-layered member that is formed on the semiconductor substrate, including a plurality of conductive members and an insulation member;    an external terminal formed on the surface of the multi-layered member; wherein    a pair of the conductive members contacts with the upper surface and the lower surface of the insulation member directly under the external terminal; the conductive members are electrically disconnected each other and not overlapped each other.    
   
   
       3 . A semiconductor device according to  claim 2 , wherein the integrated circuit includes a switching element that turns the pair of conductive members off electrically, and a part of the switching element or all of it is located directly under the external terminal.  
   
   
       4 . A semiconductor device according to  claim 2 , wherein the external terminal is located on the top layer of the conductive members and electrically connected and the top layer of the conductive members is formed as smaller than a projected area of the external terminal toward the multi-layered member.