Method of manufacturing semiconductor device and support structure for semiconductor substrate

Abstract

A method of manufacturing a semiconductor device is disclosed. The method comprises a first step of grinding a second principle surface of a semiconductor substrate opposite to a first principle surface of the semiconductor substrate on which semiconductor device elements are formed, a second step of attaching a support structure configured to support the semiconductor substrate to the second principle surface after the first step, and a third step of detaching the semiconductor substrate from the support structure.

1 . A method of manufacturing a semiconductor device, comprising: 
 a first step of grinding a second principle surface of a semiconductor substrate opposite to a first principle surface of the semiconductor substrate on which semiconductor device elements are formed;    a second step of attaching a support structure configured to support the semiconductor substrate to the second principle surface after the first step; and    a third step of detaching the semiconductor substrate from the support structure.    
     
     
         2 . The method of manufacturing a semiconductor device as claimed in  claim 1 , further comprising: 
 a dicing process of dicing the semiconductor substrate between the second step and the third step.    
     
     
         3 . The method of manufacturing a semiconductor device as claimed in  claim 1 , further comprising: 
 a sealing process of covering the first principle surface with a resin layer between the second step and the third step.    
     
     
         4 . The method of manufacturing a semiconductor device as claimed in  claim 1 , further comprising: 
 a wiring step of forming a wiring section on the first principle surface to be connected to the semiconductor device elements prior to the third step.    
     
     
         5 . The method of manufacturing a semiconductor device as claimed in  claim 1 , 
 wherein the support structure comprises:    an adhesive layer formed to contact with the semiconductor substrate; and    a supporting layer to support the adhesive layer;    the adhesive layer including 
 a first adhesive layer to adhere to the semiconductor substrate;  
   a second adhesive layer to adhere to the supporting layer, having an adhesive force greater than an adhesive force of the first adhesive layer; and 
 a base layer interposed between the first adhesive layer and the second adhesive layer.  
   
     
     
         6 . A support structure for a semiconductor substrate, adapted to adhere to the semiconductor substrate, comprising; 
 an adhesive layer formed to adhere to the semiconductor substrate; and    a supporting layer to support the adhesive layer;    wherein the adhesive layer includes 
 a first adhesive layer to adhere to the semiconductor substrate;  
 a second adhesive layer to adhere to the supporting layer, having an adhesive force greater than an adhesive force of the first adhesive layer; and  
 a base layer interposed between the first adhesive layer and the second adhesive layer.  
   
     
     
         7 . The support structure for a semiconductor substrate as claimed in  claim 6 , the supporting layer includes a Si wafer.