Method for alloy-electroplating group IB metals with refractory metals for interconnections

Abstract

An electroplated metal alloy including at least three elements. A multilayer interconnection structure that includes a substrate that is an interior of the interconnection structure, a conductive seed layer exterior to the substrate, and an electroplated metal alloy layer including at least three elements exterior to the conductive seed layer. A multilayer interconnection structure formed on a substrate, that includes a barrier layer, and a conductive seed layer, wherein the improvement includes an electroplated metal alloy layer including at least three elements. A method for forming a multilayer interconnection structure that includes providing a substrate, depositing a conductive seed layer, and electroplating a metal alloy layer including at least three elements exterior to the conductive seed layer.

1 . A method comprising: 
 providing a substrate, wherein the substrate comprises an interior of a multilayer interconnection structure;    depositing a copper seed layer exterior to the substrate; and    electroplating a metal alloy layer comprising a group IB metal and a material selected from the group consisting of iron, cobalt, and nickel, the metal alloy layer exterior to the substrate, and exterior to the copper seed layer.    
   
   
       2 . The method of  claim 1 , further comprising: 
 depositing a barrier layer exterior to the substrate, and interior to the conductive seed layer, and interior to the metal alloy layer, wherein the barrier layer is deposited prior to the depositing of the conductive seed layer.    
   
   
       3 . The method of  claim 1 , further comprising: 
 coupling the metal alloy layer to a contact point of the substrate, the contact point including at least one of a circuit device and a second interconnection.    
   
   
       4 . The method of  claim 3 , wherein the conductive seed layer is coupled to the contact point; and wherein the metal alloy layer is coupled to the conductive seed layer.  
   
   
       5 . The method of  claim 1 , wherein the metal alloy layer comprises tungsten.  
   
   
       6 . The method of  claim 1 , wherein the metal alloy layer comprises nickel, and tungsten.  
   
   
       7 . The method of  claim 1 , wherein the metal alloy layer comprises copper, nickel, and tungsten.  
   
   
       8 . The method of  claim 1 , wherein the metal alloy comprises: 
 a first material selected from the group consisting of iron, cobalt, and nickel; and    a second material selected from the group consisting of tungsten, molybdenum, tantalum, titanium, vanadium, niobium, yttrium, zirconium, ruthenium, palladium, halfnium, rhenium, and platinum.    
   
   
       9 . The method of  claim 1 , wherein the metal alloy layer comprises: 
 copper;    a first material selected from the group consisting of iron, cobalt, and nickel; and    a second material selected from the group consisting of tungsten, molybdenum, tantalum, and titanium.    
   
   
       10 . A method comprising: 
 transmitting an electronic signals to or from each layer of a multilayer interconnection structure comprising at least three elements formed on a substrate including a barrier layer, and a conductive seed layer, wherein the interconnection structure includes a metal alloy layer including a group IB metal and a material selected from the group consisting of iron, cobalt, and nickel.    
   
   
       11 . The method of  claim 10 , further comprising: 
 depositing a barrier layer exterior to the substrate, and interior to the conductive seed layer, and interior to the metal alloy layer, wherein the barrier layer is deposited prior to the depositing of the conductive seed layer.    
   
   
       12 . The method of  claim 10 , further comprising: 
 coupling the metal alloy layer to a contact point of the substrate, the contact point including at least one of a circuit device and a second interconnection.    
   
   
       13 . The method of  claim 12 , wherein the conductive seed layer is coupled to the contact point; and wherein the metal alloy layer is coupled to the conductive seed layer.  
   
   
       14 . The method of  claim 10 , wherein the metal alloy layer comprises tungsten.  
   
   
       15 . The method of  claim 10 , wherein the metal alloy layer comprises nickel, and tungsten.  
   
   
       16 . The method of  claim 10 , wherein the metal alloy layer comprises copper, nickel, and tungsten.  
   
   
       17 . The method of  claim 10 , wherein the metal alloy comprises: 
 a first material selected from the group consisting of iron, cobalt, and nickel; and    a second material selected from the group consisting of tungsten, molybdenum, tantalum, titanium, vanadium, niobium, yttrium, zirconium, ruthenium, palladium, halfnium, rhenium, and platinum.    
   
   
       18 . The method of  claim 10;  wherein the metal alloy layer comprises: 
 copper;    a first material selected from the group consisting of iron, cobalt, and nickel; and    a second material selected from the group consisting of tungsten, molybdenum, tantalum, and titanium.