US2005275944A1PendingUtilityA1

Optical films and methods of making the same

42
Assignee: WANG JIAN JPriority: Jun 11, 2004Filed: Jun 11, 2004Published: Dec 15, 2005
Est. expiryJun 11, 2024(expired)· nominal 20-yr term from priority
G02B 5/18G02B 5/1809G02B 1/113G02F 1/13363B82Y 20/00G02B 5/3025G02B 5/1857G02B 5/1866G02B 1/118G02B 5/3083
42
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Claims

Abstract

Films for optical use, articles containing such films, methods for making such films, and systems that utilize such films, are disclosed.

Claims

exact text as granted — not AI-modified
1 . A method, comprising: 
 providing an article that includes a layer of a first material, wherein the layer of the first material includes at least one trench and wherein the layer is birefringent for light of wavelength λ propagating through the layer along an axis, wherein λ is between 150 nm and 2,000 nm; and    filling at least about 50% of a volume of the trench by sequentially forming a plurality of monolayers of a second material within the trench.    
     
     
         2 . The method of  claim 1 , wherein the filling further comprises forming one or more monolayers of a third material within the trench, wherein the second and third materials are different.  
     
     
         3 . The method of  claim 2 , wherein the monolayers of the second and third materials form a nanolaminate material.  
     
     
         4 . The method of  claim 1 , wherein at least about 80% of the volume of the trench is filled by sequentially forming the plurality of monolayers of the second material within the trench.  
     
     
         5 . The method of  claim 1 , wherein at least about 90% of the volume of the trench is filled by sequentially forming the plurality of monolayers of the second material within the trench.  
     
     
         6 . The method of  claim 1 , wherein at least about 99% of the volume of the trench is filled by sequentially forming the plurality of monolayers of the second material within the trench.  
     
     
         7 . The method of  claim 1 , wherein the second material is different from the first material.  
     
     
         8 . The method of  claim 1 , wherein the layer of the first material and the second material form a continuous layer.  
     
     
         9 . The method of  claim 1 , wherein the article comprises additional trenches formed in the surface of the layer of the first material.  
     
     
         10 . The method of  claim 9 , wherein the method further comprises filling at least about 50% of a volume of each of the additional trenches by sequentially forming a plurality of monolayers of the second material within the additional trenches.  
     
     
         11 . The method of  claim 9 , wherein the method further comprises filling at least about 80% of a volume of each of the additional trenches by sequentially forming a plurality of monolayers of the second material within the additional trenches.  
     
     
         12 . The method of  claim 9 , wherein the method further comprises filling at least about 90% of a volume of each of the additional trenches by sequentially forming a plurality of monolayers of the second material within the additional trenches.  
     
     
         13 . The method of  claim 9 , wherein the method further comprises filling at least about 99% of a volume of each of the additional trenches by sequentially forming a plurality of monolayers of the second material within the additional trenches.  
     
     
         14 . The method of  claim 9 , wherein the trenches are separated by rows of the first material.  
     
     
         15 . The method of  claim 7 , wherein the layer of the first material forms a surface relief grating.  
     
     
         16 . The method of  claim 15 , wherein the surface relief grating has a grating period of about 500 nm or less.  
     
     
         17 . The method of  claim 7 , wherein the trench is formed by etching a continuous layer of the first material.  
     
     
         18 . The method of  claim 17 , wherein the etching comprising reactive ion etching.  
     
     
         19 . The method of  claim 1 , wherein the trench is formed lithographically.  
     
     
         20 . The method of  claim 19 , wherein the trench is formed using nano-imprint lithography.  
     
     
         21 . The method of  claim 20 , wherein the nano-imprint lithography includes forming a pattern in a thermoplastic material.  
     
     
         22 . The method of  claim 20 , wherein the nano-imprint lithography includes forming a pattern in a UV curable material.  
     
     
         23 . The method of  claim 19 , wherein the trench is formed using holographic lithography.  
     
     
         24 . The method of  claim 1 , further comprising forming a layer of the second material over the filled trench by sequentially forming monolayers of the second material over the trench.  
     
     
         25 . The method of  claim 24 , wherein the layer of the second material has a surface with an arithmetic mean roughness of about 50 nm or less.  
     
     
         26 . The method of  claim 1 , wherein the second material is a dielectric material.  
     
     
         27 . The method of  claim 1 , wherein forming the plurality of monolayers of the second material comprises depositing a monolayer of a precursor and exposing the monolayer of the precursor to a reagent to provide a monolayer of the second material.  
     
     
         28 . The method of  claim 27 , wherein the reagent chemically reacts with the precursor to form the second material.  
     
     
         29 . The method of  claim 28 , wherein the reagent oxidizes the precursor to form the second material.  
     
     
         30 . The method of  claim 27 , wherein depositing the monolayer of the precursor comprises introducing a first gas comprising the precursor into a chamber housing the article.  
     
     
         31 . The method of  claim 30 , wherein a pressure of the first gas in the chamber is about 0.01 to about 100 Torr while the monolayer of the precursor is deposited.  
     
     
         32 . The method of  claim 30 , wherein exposing the monolayer of the precursor to the reagent comprises introducing a second gas comprising the reagent into the chamber.  
     
     
         33 . The method of  claim 30 , wherein a pressure of the second gas in the chamber is about 0.01 to about 100 Torr while the monolayer of the precursor is exposed to the reagent.  
     
     
         34 . The method of  claim 30 , wherein a third gas is introduced into the chamber after the first gas is introduced and prior to introducing the second gas.  
     
     
         35 . The method of  claim 27 , wherein the third gas is inert with respect to the precursor.  
     
     
         36 . The method of  claim 27 , wherein the third gas comprises at least one gas selected from the group consisting of helium, argon, nitrogen, neon, krypton, and xenon.  
     
     
         37 . The method of  claim 27 , wherein the precursor is selected from the group consisting of tris(tert-butoxy)silanol, (CH 3 ) 3 Al, TiCl 4 , SiCl 4 , SiH 2 Cl 2 , TaCl 3 , AlCl 3 , Hf-ethaoxide and Ta-ethaoxide.  
     
     
         38 . The method of  claim 1 , wherein the trench has a width of about 1,000 nm or less.  
     
     
         39 . The method of  claim 1 , wherein the trench has a depth of about 10 nm or more.  
     
     
         40 . The method of  claim 8 , wherein the continuous layer is birefringent for light of wavelength λ propagating through the continuous layer along an axis, wherein λ is between 150 nm and 2,000 nm.  
     
     
         41 . A method, comprising: 
 forming a layer of a material on a surface of a grating using atomic layer deposition.    
     
     
         42 . The method of  claim 41 , wherein the grating is a surface relief grating.  
     
     
         43 . The method of  claim 41 , wherein the grating has a grating period of about 2,000 nm or less.  
     
     
         44 . The method of  claim 1 , further comprising forming a second birefringent layer on the layer of the first material after filling the trench.  
     
     
         45 . The method of  claim 44 , wherein the second birefringent layer comprises a plurality of trenches and forming the second birefringent layer includes filling the plurality of trenches by sequentially forming a plurality of monolayers of a third material within the trenches of the second birefringent layer.  
     
     
         46 . The method of  claim 44 , further comprising forming additional birefringent layers on the second birefringent layer.  
     
     
         47 . A method, comprising: 
 forming an optical retardation film using atomic layer deposition.    
     
     
         48 . The method of  claim 47 , wherein the optical retardation film is form birefringent.  
     
     
         49 . An article, comprising: 
 a continuous layer including rows of a first material alternating with rows of a nanolaminate material,    wherein the continuous layer is birefringent for light of wavelength λ propagating through the continuous layer along an axis, wherein λ is between 150 nm and 2,000 nm.    
     
     
         50 . The article of  claim 49 , further comprising at least one antireflection film, wherein a surface of the article comprises a surface of the antireflection film.  
     
     
         51 . The article of  claim 49 , further comprising a layer of a third material adjacent the continuous layer.  
     
     
         52 . The article of  claim 49 , further comprising a layer of the nanolaminate material adjacent the continuous layer.  
     
     
         53 . The article of  claim 49 , wherein the layer of the nanolaminate material adjacent the continuous layer has a surface with an arithmetic mean roughness of about 50 nm or less.  
     
     
         54 . The method of  claim 49 , wherein the layer of the nanolaminate material adjacent the continuous layer has a surface with an arithmetic mean roughness of about 20 nm or less.  
     
     
         55 . The method of  claim 49 , wherein the layer of the nanolaminate material adjacent the continuous layer has a surface with an arithmetic mean roughness of about 10 nm or less.  
     
     
         56 . The article of  claim 49 , wherein the nanolaminate material has a refractive index of about 1.3 or more at λ.  
     
     
         57 . The article of  claim 49 , wherein the nanolaminate material has a refractive index of about 1.5 or more at λ.  
     
     
         58 . The article of  claim 49 , wherein the nanolaminate material has a refractive index of about 1.6 or more at λ.  
     
     
         59 . The article of  claim 49 , wherein the nanolaminate material has a refractive index of about 1.7 or more at λ.  
     
     
         60 . The article of  claim 49 , wherein the nanolaminate material has a refractive index of about 1.8 or more at λ.  
     
     
         61 . The article of  claim 49 , wherein the nanolaminate material has a refractive index of about 1.9 or more at λ.  
     
     
         62 . The article of  claim 49 , wherein the nanolaminate material has a refractive index of about 2.0 or more at λ.  
     
     
         63 . The article of  claim 49 , wherein the nanolaminate material comprises portions of a second material and portions of a third material, wherein the second and third materials are different.  
     
     
         64 . The article of  claim 63 , wherein the first and third materials are the same.  
     
     
         65 . The article of  claim 49 , wherein the nanolaminate material comprises a dielectric material.  
     
     
         66 . The article of  claim 49 , wherein the nanolaminate material comprises an inorganic material.  
     
     
         67 . The article of  claim 49 , wherein the nanolaminate material comprises a metal.  
     
     
         68 . The article of  claim 49 , wherein the nanolaminate material comprises a material selected from a group consisting of SiO 2 , SiN x , Si, Al 2 O 3 , ZrO 2 , Ta 2 O 5 , TiO 2 , HfO 2 , Nb 2 O 5 , and MgF 2 .  
     
     
         69 . The article of  claim 49 , wherein the first material is a dielectric material.  
     
     
         70 . The article of  claim 49 , wherein the first material is an inorganic material.  
     
     
         71 . The article of  claim 49 , wherein the first material is a polymer.  
     
     
         72 . The article of  claim 49 , wherein the first material is a semiconductor.  
     
     
         73 . The article of  claim 49 , wherein the first material is a metal.  
     
     
         74 . The article of  claim 49 , wherein the first material is selected from a group consisting of SiO 2 , SiN x , Si, Al 2 O 3 , ZrO 2 , Ta 2 O 5 , TiO 2 , HfO 2 , Nb 2 O 5 , and MgF 2 .  
     
     
         75 . The article of  claim 49 , wherein the first material is a glass.  
     
     
         76 . The article of  claim 49 , wherein the continuous layer forms a grating with a grating period of about 500 nm or less.  
     
     
         77 . The article of  claim 49 , wherein the continuous layer forms a grating with a grating period of about 200 nm or less.  
     
     
         78 . The article of  claim 49 , wherein the continuous layer forms a grating with a grating period of about 100 nm or less.  
     
     
         79 . The article of  claim 49 , wherein the continuous layer forms a grating with a grating period of about 50 nm or less.  
     
     
         80 . The article of  claim 49 , wherein the rows of the first material have a minimum width of about 500 nm or less.  
     
     
         81 . The article of  claim 49 , wherein the rows of the first material have a minimum width of about 200 nm or less.  
     
     
         82 . The article of  claim 49 , wherein the rows of the first material have a minimum width of about 100 nm or less.  
     
     
         83 . The article of  claim 49 , wherein the rows of the first material have a minimum width of about 50 nm or less.  
     
     
         84 . The article of  claim 49 , wherein the rows of the first material have a minimum width of about 20 nm or less.  
     
     
         85 . The article of  claim 49 , wherein the rows of the first material have a minimum width of about 10 nm or less.  
     
     
         86 . The article of  claim 49 , wherein the rows of the first material have a minimum width that is different than a minimum width of the rows of the nanolaminate material.  
     
     
         87 . The article of  claim 49 , wherein the rows of the first material have a minimum width that is the same as a minimum width of the rows of the nanolaminate material.  
     
     
         88 . The article of  claim 49 , wherein a minimum width of each of the rows of the first material is substantially the same.  
     
     
         89 . The article of  claim 49 , wherein a minimum width of each of the rows of the nanolaminate material is substantially the same.  
     
     
         90 . The article of  claim 49 , wherein the continuous layer has a thickness of about 15 nm or more.  
     
     
         91 . The article of  claim 49 , wherein the continuous layer has a thickness of about 100 nm or more.  
     
     
         92 . The article of  claim 49 , wherein the continuous layer has a thickness of about 200 nm or more.  
     
     
         93 . The article of  claim 49 , wherein the continuous layer has a thickness of about 300 nm or more.  
     
     
         94 . The article of  claim 49 , wherein the continuous layer has a thickness of about 500 nm or more.  
     
     
         95 . The article of  claim 49 , wherein the continuous layer has a thickness of about 1,000 nm or more.  
     
     
         96 . The article of  claim 49 , wherein the continuous layer has a thickness of about 1,500 nm or more.  
     
     
         97 . The article of  claim 49 , wherein the layer has a thickness of about 2,000 nm or more.  
     
     
         98 . The article of  claim 49 , wherein the continuous layer has an optical retardation of about 1 nm or more for light of wavelength λ propagating through the continuous layer along an axis, wherein λ is between 150 nm and 2,000 nm.  
     
     
         99 . The article of  claim 49 , wherein the continuous layer has an optical retardation of about 2 nm or more for light of wavelength λ propagating through the continuous layer along an axis, wherein λ is between 150 nm and 2,000 nm.  
     
     
         100 . The article of  claim 49 , wherein the continuous layer has an optical retardation of about 5 nm or more for light of wavelength λ propagating through the continuous layer along an axis, wherein λ is between 150 nm and 2,000 mm.  
     
     
         101 . The article of  claim 49 , wherein the layer has an optical retardation of about 10 nm or more for light of wavelength λ propagating through the composite layer along an axis, wherein λ is between 150=n and 2,000 nm.  
     
     
         102 . The article of  claim 49 , wherein the layer has an optical retardation of about 20 nm or more for light of wavelength λ propagating through the composite layer along an axis, wherein λ is between about 150 nm and about 2,000 nm.  
     
     
         103 . The article of  claim 49 , wherein the layer has an optical retardation of about 50 nm or more for light of wavelength λ propagating through the composite layer along an axis, wherein λ is between about 150 nm and about 2,000 nm.  
     
     
         104 . The article of  claim 49 , wherein the layer has an optical retardation of about 2,000 nm or less for light of wavelength λ propagating through the composite layer along an axis, wherein λ is between about 150 nm and about 2,000 nm.  
     
     
         105 . The article of  claim 49 , wherein the layer has an optical retardation of about 1,000 nm or less for light of wavelength λ propagating through the composite layer along an axis, wherein λ is between about 150 nm and about 2,000 mm.  
     
     
         106 . The article of  claim 49 , wherein λ is between about 400 nm and about 700 nm.  
     
     
         107 . The article of  claim 49 , wherein λ is between about 510 nm and about 570 mm.  
     
     
         108 . The article of  claim 49 , wherein the continuous layer has an optical retardation of about 4 nm or more for light of wavelength λ propagating through the continuous layer along an axis, wherein λ is between about 400 nm and about 700 nm.  
     
     
         109 . The article of  claim 49 , further comprising a second continuous layer including rows of a third material alternating with rows of a second nanolaminate material, 
 wherein the second continuous layer is birefringent for light of wavelength λ propagating through the second continuous layer along the axis.    
     
     
         110 . The article of  claim 109 , further comprising additional form birefringent layers, wherein each of the form birefringent layers are birefringent for light of wavelength λ propagating through each form birefringent layer along the axis.  
     
     
         111 . An article, comprising: 
 a form birefringent optical retardation film comprising a nanolaminate material.

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