Plasma processing method and apparatus

Abstract

Provided is a plasma processing method for generating microplasma in a space of a microplasma source arranged in the vicinity of an object to be processed by supplying gas to the space and supplying electric power to a member located in the vicinity of the space, making activated particles emitted from an opening of the microplasma source joined to the space act on the object, and forming a fine linear portion on the object. The fine linear portion is formed on the object while flowing the gas to the neighborhood of the opening along the lengthwise direction of the fine linear portion parallel to the object.

1 - 15 . (canceled)  
   
   
       16 . A plasma processing apparatus comprising: 
 a microplasma source arranged in a vicinity of an object to be processed;    a gas supply unit for supplying plasma generating-use gas to a space of the microplasma source; and    a power supply for supplying electric power to a member located in the vicinity of the space of the microplasma source,    the space of the microplasma source communicating with a gas supply inlet to which the gas is supplied and a gas exhaust outlet which is provided separately from an opening of the microplasma source opposite to the object and from which the gas supplied to the space is exhausted, and    the fine linear portion being formed on the object by generating microplasma in the space of the microplasma source while flowing the gas parallel to the object along a lengthwise direction of the fine linear portion to be formed on the object in the vicinity of the opening from the gas supply inlet toward the gas exhaust outlet in the space of the microplasma source and by making activated particles discharged from the opening of the microplasma source communicating with the space act on the object.    
   
   
       17 . The plasma processing apparatus as claimed in  claim 16 , wherein the member located in the vicinity of the space of the microplasma source for supplying the electric power is at least one of an electrode provided on a side opposite from a surface to be processed of the object, the object, and the microplasma source.  
   
   
       18 . The plasma processing apparatus as claimed in  claim 16 , wherein a cross-sectional area obtained by cutting the space for generating the microplasma by a plane perpendicular to the lengthwise direction of the fine linear portion is larger than a cross-sectional area obtained by cutting a rectangular parallelepiped that has the opening of the microplasma source and the fine linear portion of the object as opposite surfaces by a plane perpendicular to the lengthwise direction of the fine linear portion.  
   
   
       19 . The plasma processing apparatus as claimed in  claim 16 , wherein a cross-sectional area obtained by cutting the space for generating the microplasma by a plane perpendicular to the lengthwise direction of the fine linear portion is ten or more times larger than a cross-sectional area obtained by cutting a rectangular parallelepiped that has the opening of the microplasma source and the fine linear portion of the object as opposite surfaces by a plane perpendicular to the lengthwise direction of the fine linear portion.  
   
   
       20 . A plasma processing apparatus comprising: 
 a microplasma source arranged in a vicinity of an object to be processed;    a gas supply unit for supplying plasma generating-use gas to a microplasma generating-use space of the microplasma source; and    a power supply for supplying electric power to a member located in a vicinity of the space of the microplasma source,    the microplasma generating-use space of the microplasma source comprising a gas flow passage space separately from an opening of the microplasma source, the gas flow passage space communicating with a gas supply inlet to which the gas is supplied and a gas exhaust outlet which is provided separately from the opening of the microplasma source opposite to the object and from which the gas supplied to the gas flow passage space is exhausted, and    the fine linear portion being formed on the object by generating microplasma in the microplasma generating-use space of the microplasma source while flowing the gas parallel to the object along a lengthwise direction of the fine linear portion to be formed on the object in the vicinity of the opening from the gas supply inlet toward the gas exhaust outlet in the microplasma generating-use space of the microplasma source and by making activated particles discharged from the opening of the microplasma source communicating with the space act on the object.    
   
   
       21 . The plasma processing apparatus as claimed in  claim 20 , wherein the member located in the vicinity of the space of the microplasma source for supplying the electric power is at least one of an electrode provided on a side opposite from a surface to be processed of the object, the object, and the microplasma source.  
   
   
       22 . The plasma processing apparatus as claimed in  claim 20 , wherein the gas flow passage space communicating with the gas supply inlet for carrying out the gas supply and the gas exhaust outlet for carrying out the gas exhaustion is arranged separately from the microplasma generating-use space located adjacent to the object.  
   
   
       23 . The plasma processing apparatus as claimed in  claim 20 , wherein a cross-sectional area obtained by cutting the gas flow passage space by a plane perpendicular to the lengthwise direction of the fine linear portion is larger than a cross-sectional area obtained by cutting a rectangular parallelepiped that has the opening of the microplasma source and the fine linear portion of the object as opposite surfaces by a plane perpendicular to the lengthwise direction of the fine linear portion.  
   
   
       24 . The plasma processing apparatus as claimed in  claim 20 , wherein a cross-sectional area obtained by cutting the gas flow passage space by a plane perpendicular to the lengthwise direction of the fine linear portion is ten or more times larger than a cross-sectional area obtained by cutting a rectangular parallelepiped that has the opening of the microplasma source and the fine linear portion of the object as opposite surfaces by a plane perpendicular to the lengthwise direction of the fine linear portion.  
   
   
       25 . The plasma processing apparatus as claimed in  claim 16 , wherein the gas supply to the space for generating the microplasma by the gas supply unit is carried out via a through hole provided at a wall surface that surrounds the space for generating the microplasma, and the gas exhaustion from the space for generating the microplasma is carried out via the space for generating the microplasma in a direction opposite from the opening of the microplasma source.  
   
   
       26 . The plasma processing apparatus as claimed in  claim 16 , wherein the opening of the microplasma source has a width of not smaller than 0.01 mm and not greater than mm.  
   
   
       27 . The plasma processing apparatus as claimed in  claim 16 , wherein the opening of the microplasma source has a width of not smaller than 0.01 mm and not greater than 1 mm.  
   
   
       28 . The plasma processing apparatus as claimed in  claim 16 , wherein a distance between the opening of the microplasma source and the object is not smaller than 0.01 mm and not greater than 1 mm.  
   
   
       29 . The plasma processing apparatus as claimed in  claim 16 , wherein a distance between the opening of the microplasma source and the object is not smaller than 0.01 mm and not greater than 0.5 mm.  
   
   
       30 . A plasma processing apparatus comprising: 
 a high-frequency power supply for applying high-frequency power;    a plasma generating section provided with a first electrode connected to the high-frequency power supply, a second electrode arranged opposite from the first electrode, and a discharge space for generating plasma discharge between the first electrode and the second electrode;    a gas supply unit for supplying gas to the discharge space;    a control unit for executing control so that a pressure of the discharge space is 100 Pa to 200 kPa and a product PD of the pressure P of the discharge space and a thickness D of the discharge space becomes 0.1 to 120 (Pa·m); and    a moving unit for moving the plasma generating section and the object relatively to each other.    
   
   
       31 . The plasma processing apparatus as claimed in  claim 30 , wherein the moving unit is a plasma generating section moving unit for moving the plasma generating section with respect to the object.  
   
   
       32 . The plasma processing apparatus as claimed in  claim 30 , wherein the moving unit is an object moving unit for moving the object with respect to the plasma generating section.  
   
   
       33 . A plasma processing method comprising: 
 supplying gas to a discharge space formed between both first and second electrodes arranged oppositely to each other;    generating plasma in the discharge space by executing control so that a pressure of the discharge space is maintained at 100 Pa to 200 kPa and a product PD of the pressure P of the discharge space and a thickness D of the discharge space becomes 0.1 to 120 (Pa·m) and applying high-frequency power to the first electrode; and    moving the generated plasma and the object relatively to each other to process the object by the generated plasma.    
   
   
       34 . The plasma processing apparatus as claimed in  claim 16 , further comprising: 
 a control unit for executing control so that a pressure of the space of the microplasma source is 100 Pa to 200 kPa and a product PD of the pressure P of the space of the microplasma source and a thickness D of the space of the microplasma source becomes 0.1 to 120 (Pa·m); and    a moving unit for moving the space of the microplasma source and the object relatively to each other.    
   
   
       35 . The plasma processing method as claimed in  claim 16 , wherein, 
 in forming the fine linear portion on the object, plasma is generated in the space of the microplasma source by executing control so that a pressure of the space of the microplasma source is maintained at 100 Pa to 200 kPa and a product PD of the pressure P of the space of the microplasma source and a thickness D of the space of the microplasma source becomes 0.1 to 120 (Pa·m) and supplying electric power to the member located in the vicinity of the space of the microplasma source, and    the generated plasma and the object are moved relatively to each other to form the fine linear portion on the object by the generated plasma.