US2005279964A1PendingUtilityA1

Chemical mechanical polishing slurry for polishing copper layer on a wafer

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Assignee: TSAY MING-TSEHPriority: Jun 17, 2004Filed: Jun 17, 2004Published: Dec 22, 2005
Est. expiryJun 17, 2024(expired)· nominal 20-yr term from priority
Inventors:Ming-Tseh TsayZong-Whie ShihWen-Chueh PanYang-Jiann Fann
H10P 52/403C23F 3/06C09K 3/1409C09K 3/1463C09G 1/02
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Claims

Abstract

A chemical mechanical polishing slurry is provided for the copper layer on a wafer. The slurry contains colloidal silica and a chemical etching agent composed of hydrogen peroxide, acetic acid, and phthalic acid. The hydrogen peroxide oxides the surface of the copper layer. The acetic acid then reacts with the copper oxide to form copper acetate. This selective and functional chemical reaction mechanism can speed up the polishing removal rate and reduce scratches. The phthalic acid functions as both a pH buffering agent and a complexing agent to make the reaction concentration at each point of the wafer surface more homogeneous. Therefore, the copper layer during the chemical mechanical polishing process has a high removal rate and uniformity.

Claims

exact text as granted — not AI-modified
1 . A chemical mechanical polishing (CMP) slurry for polishing the copper layer on a wafer, comprising polishing particles, hydrogen peroxide, acetic acid, and phthalic acid; 
 wherein the polishing particles are of a particle diameter of 10˜100 nm and include a concentration of 0.5˜10 wt % colloidal silica;    wherein the concentration of the hydrogen peroxide is 0.6˜2.5 V %, and    wherein the pH value is 2.5-5.5.    
   
   
       2 - 4 . (canceled)  
   
   
       5 . The CMP slurry of  claim 1 , wherein the concentration of the acetic acid is 0.1˜1.0 V %.  
   
   
       6 . The CMP slurry of  claim 1 , wherein the concentration of the phthalic acid is 0.1˜0.8 wt %.  
   
   
       7 . (canceled)  
   
   
       8 . The CMP slurry of  claim 1 , wherein the concentration ratio of hydrogen peroxide to acetic acid is 0.6˜25.  
   
   
       9 . The CMP slurry of  claim 1 , wherein the concentration ratio of acetic acid to phthalic acid is 0.125˜10.  
   
   
       10 . The CMP slurry of  claim 5 , wherein the concentration of the phthalic acid is 0.1˜0.8 wt %.  
   
   
       11 . The CMP slurry of  claim 5 , wherein the concentration ratio of hydrogen peroxide to acetic acid is 0.6˜25.  
   
   
       12 . The CMP slurry of  claim 6 , wherein the concentration ratio of hydrogen peroxide to acetic acid is 0.6˜25.  
   
   
       13 . The CMP slurry of  claim 10 , wherein the concentration ratio of hydrogen peroxide to acetic acid is 0.6˜25.  
   
   
       14 . The CMP slurry of  claim 5 , wherein the concentration ratio of acetic acid to phthalic acid is 0.125˜10.  
   
   
       15 . The CMP slurry of  claim 6 , wherein the concentration ratio of acetic acid to phthalic acid is 0.125˜10.  
   
   
       16 . The CMP slurry of  claim 10 , wherein the concentration ratio of acetic acid to phthalic acid is 0.125˜10.  
   
   
       17 . The CMP slurry of  claim 11 , wherein the concentration ratio of acetic acid to phthalic acid is 0.125˜10.  
   
   
       18 . The CMP slurry of  claim 12 , wherein the concentration ratio of acetic acid to phthalic acid is 0.125˜10.  
   
   
       19 . The CMP slurry of  claim 13 , wherein the concentration ratio of acetic acid to phthalic acid is 0.125˜10.

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