US2005280147A1PendingUtilityA1

Imprinting lithography using the liquid/solid transition of metals and their alloys

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Assignee: CHEN YONGPriority: Jun 16, 2004Filed: Apr 14, 2005Published: Dec 22, 2005
Est. expiryJun 16, 2024(expired)· nominal 20-yr term from priority
Inventors:Yong Chen
G03F 7/0002B82Y 10/00B82Y 40/00
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Claims

Abstract

A method is provided for imprinting a pattern having nanoscale features from a mold into the patternable layer on a substrate. The method comprises: providing the mold; forming the patternable layer on the substrate; and imprinting the mold into the patternable layer, wherein the patternable layer comprises a metal or alloy having a transition temperature from its solid form to its liquid form that is within a range of at least 10° above room temperature.

Claims

exact text as granted — not AI-modified
1 - 19 . (canceled)  
     
     
         20 . A masking layer for use in forming a pattern having nanoscale features on a substrate with a mold, said masking layer comprising a patternable layer formed on said substrate, wherein said patternable layer comprises a metal or alloy having a transition temperature from its solid form to its liquid form that is at least 10° C. above room temperature.  
     
     
         21 . The masking layer of  claim 20  wherein said transition temperature is at least 50° C.  
     
     
         22 . The masking layer of  claim 20  wherein said transition temperature is less than 500° C.  
     
     
         23 . The masking layer of  claim 20  wherein said patternable layer comprises a metal selected from the group consisting of gallium, indium, and tin and their alloys.  
     
     
         24 . The masking layer of  claim 23  wherein said alloy comprises a binary alloy of two of said metals.  
     
     
         25 . The masking layer of  claim 20  wherein said mold comprises a material selected from the group consisting of silicon, silicon dioxide, silicon nitride, and sapphire.  
     
     
         26 . The masking layer of  claim 20  wherein said substrate comprises a material selected from the group consisting of silicon, silicon dioxide, silicon nitride, and sapphire.  
     
     
         27 . The masking layer of  claim 20  further comprising an adhesive/reactive layer formed on said substrate and said metal or metal alloy formed on said adhesive/reactive layer.  
     
     
         28 . The masking layer of  claim 27  wherein said adhesive/reactive layer comprises a metal selected from the group consisting of titanium, chromium, platinum, and palladium.

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