US2005282313A1PendingUtilityA1

Methods for modifying semiconductor devices to stabilize the same and semiconductor device assembly

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Assignee: AKRAM SALMANPriority: Jun 8, 2000Filed: Aug 26, 2005Published: Dec 22, 2005
Est. expiryJun 8, 2020(expired)· nominal 20-yr term from priority
H05K 3/303H05K 2201/2036H05K 2201/10734B33Y 80/00H05K 3/3436H05K 2201/10568H05K 2201/10674H10W 72/9415H10W 72/07236H10W 72/07227H10W 72/0711H10W 72/285H10W 72/251H10W 72/90H10W 72/20H10W 76/40H10W 72/9445Y02P70/50
51
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Claims

Abstract

One or more stabilizers are disposed on the surface of a semiconductor device component prior to bonding the same to a higher-level substrate. The one or more stabilizers may be formed on or secured to the surface. Upon assembly of the semiconductor device component face down upon a higher-level substrate and joining conductive structures between the contact pads of the semiconductor device component and corresponding contact pads of the higher-level substrate, the stabilizers at least partially stabilize the semiconductor device component on the higher-level substrate to maintain a substantially parallel relation therebetween. The stabilizers can also be positioned and configured to define a minimum, substantially uniform distance between the semiconductor device component and the higher-level substrate.

Claims

exact text as granted — not AI-modified
1 . A method for modifying a semiconductor die, comprising: 
 providing at least one semiconductor die having an active surface; and    disposing on the active surface at least one stabilizer, the at least one stabilizer comprising a plurality of adjacent, mutually adhered regions comprising a dielectric material and protruding from the active surface.    
   
   
       2 . The method of  claim 1 , wherein disposing the at least one stabilizer comprises disposing a plurality of stabilizers.  
   
   
       3 . The method of  claim 1 , wherein disposing the at least one stabilizer comprises forming the at least one stabilizer to have a height that defines a substantially consistent die-to-substrate distance.  
   
   
       4 . The method of  claim 1 , wherein providing comprises providing at least one semiconductor die having a sealing material on an active surface thereof and wherein disposing comprises forming the at least one stabilizer to be securable to the sealing material.  
   
   
       5 . The method of  claim 1 , wherein providing comprises providing a semiconductor wafer including a plurality of semiconductor dice.  
   
   
       6 . The method of  claim 1 , further comprising: adhering the at least one stabilizer to the active surface.  
   
   
       7 . The method of  claim 1 , wherein disposing the at least one stabilizer comprises forming the at least one stabilizer.  
   
   
       8 . The method of  claim 7 , wherein forming the at least one stabilizer comprises applying a layer of insulative material on the active surface and patterning the layer.  
   
   
       9 . The method of  claim 7 , wherein forming the at least one stabilizer comprises applying a layer of photoresist material on the active surface and patterning the layer.  
   
   
       10 . The method of  claim 1 , wherein disposing the at least one stabilizer comprises positioning the at least one stabilizer on the active surface so as to avoid contact with conductive traces on a carrier substrate.  
   
   
       11 . The method of  claim 1 , further comprising: 
 disposing at least one conductive structure on at least one bond pad of the at least one semiconductor die.    
   
   
       12 . The method of  claim 1 , further comprising: recognizing a location and orientation of the at least one die before or while disposing the at least one stabilizer.  
   
   
       13 . The method of  claim 12 , further comprising: 
 storing data including at least one physical parameter of the at least one substrate in computer memory, and using the stored data in conjunction with a machine vision system to recognize the location and orientation of the at least one substrate and to form the at least one stabilizer.    
   
   
       14 . The method of  claim 13 , wherein storing data further includes storing in computer memory at least one parameter of another semiconductor device component with which the at least one substrate is to be assembled.  
   
   
       15 . The method of  claim 13 , further comprising: 
 using stored data, in conjunction with the machine vision system, to selectively form the at least one stabilizer.    
   
   
       16 . A method for electrically connecting a semiconductor die that includes a surface and conductive structures protruding from the surface to a substrate with contacts positioned correspondingly to the conductive structures, the method comprising: 
 disposing at least one stabilizer structure comprising a plurality of adjacent, mutually adhered regions, each comprising a dielectric material, on at least one of the surface and the substrate for positioning between the surface and the substrate;    inverting and positioning the semiconductor die on the substrate to contact the conductive structures to corresponding contacts; and    bonding the conductive structures to the corresponding contacts.    
   
   
       17 . The method of  claim 16 , wherein disposing comprises disposing at least one stabilizer structure having a height less than a minimum distance the conductive structures protrude from the surface.  
   
   
       18 . The method of  claim 16 , wherein disposing comprises disposing the at least one stabilizer structure that spaces the surface from the substrate a distance greater than a minimum distance at least one of the conductive structures protrudes from the surface.  
   
   
       19 . The method of  claim 18 , wherein bonding comprises disposing at least one stabilizer structure having a height that is configured to lengthen at least one of the conductive structures.  
   
   
       20 . The method of  claim 16 , wherein disposing comprises configuring the at least one stabilizer structure to be positioned between a periphery of the surface of the semiconductor die and the conductive structures.

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