Vertical CVD apparatus and CVD method using the same

Abstract

A vertical CVD apparatus includes a supply system configured to supply process gases into a process chamber, and a control section configured to control an operation of the apparatus. The supply system includes a plurality of first delivery holes connected to a first reactive gas line to supply a first reactive gas, and a plurality of second delivery holes connected to a second reactive gas line to supply a second reactive gas. Each set of the first delivery holes and the second delivery holes are arrayed in a vertical direction at a position adjacent to edges of target substrates, so as to be distributed entirely over the vertical length of the target substrates stacked at intervals. The control section controls the supply system to alternately supply first and second reactive gases, thereby forming a thin film derived from the first and second reactive gases on the target substrates.

1 . A vertical CVD apparatus for performing a CVD process on a plurality of target substrates all together, the apparatus comprising: 
 an airtight process chamber configured to accommodate the target substrates;    a holder configured to hold the target substrates stacked at intervals in the process chamber;    a heater configured to heat an atmosphere in the process chamber;    an exhaust system configured to exhaust the process chamber;    a supply system configured to supply process gases into the process chamber, the supply system comprising a plurality of first delivery holes connected to a first reactive gas line to supply a first reactive gas, and a plurality of second delivery holes connected to a second reactive gas line to supply a second reactive gas, wherein each set of the first delivery holes and the second delivery holes are arrayed in a vertical direction at a position adjacent to edges of the target substrates, so as to be distributed substantially entirely over a vertical length of the target substrates stacked at intervals; and    a control section configured to control an operation of the apparatus, so as to repeatedly execute first and second steps a plurality of times, thereby forming a thin film derived from the first and second reactive gases on the target substrates, wherein the first step is a performed by supplying one gas of the first and second reactive gases while stopping the other gas, so as to cause said one gas to be adsorbed on surfaces of the target substrates, and the second step is performed by supplying said other gas while stopping said one gas, so as to cause said other gas to act on said one gas adsorbed on the surfaces of the target substrates.    
   
   
       2 . The apparatus according to  claim 1 , wherein the supply system comprises first and second pipes extending in a vertical direction at a position adjacent to edges of the target substrates, so as to be present substantially entirely over a vertical length of the target substrates stacked at intervals, and wherein the first delivery holes comprise holes formed in the first pipe and the second delivery holes comprise holes formed in the second pipe.  
   
   
       3 . The apparatus according to  claim 1 , wherein the supply system comprises a first inactive gas line connected to the first delivery holes, and a second inactive gas line connected to the second delivery holes.  
   
   
       4 . The apparatus according to  claim 3 , wherein the control section is configured to execute a first purge step between the first and second steps, and execute a second purge step between the second and first steps, and wherein the first purge step is performed by exhausting the process chamber while supplying an inactive gas from the first delivery holes, so as to purge the first reactive gas from the process chamber, and the second purge step is performed by exhausting the process chamber while supplying an inactive gas from the second delivery holes, so as to purge the second reactive gas from the process chamber.  
   
   
       5 . The apparatus according to  claim 1 , wherein the exhaust system comprises an inner exhaust passage extending in a vertical direction at a position adjacent to edges of the target substrates, so as to be present substantially entirely over a vertical length of the target substrates stacked at intervals.  
   
   
       6 . The apparatus according to  claim 5 , wherein the process chamber comprises an inner tube configured to accommodate the holder, and an outer tube disposed concentrically with the inner tube with a gap therebetween, the inner exhaust passage is formed along an inner surface of the inner tube, an outer exhaust passage is formed between the inner tube and the outer tube and communicates with the inner exhaust passage at an end of the inner tube, and the outer exhaust passage is connected to an exhaust apparatus disposed outside the process chamber.  
   
   
       7 . The apparatus according to  claim 1 , wherein the exhaust system comprises a plurality of exhaust holes arrayed in a vertical direction at a position adjacent to edges of the target substrates, so as to be distributed substantially entirely over a vertical length of the target substrates stacked at intervals, and the first and second delivery holes are disposed on a first side of the process chamber and the exhaust holes are disposed on a second side of the process chamber opposite the first side.  
   
   
       8 . The apparatus according to  claim 7 , wherein the process chamber comprises an inner tube configured to accommodate the holder, and an outer tube disposed concentrically with the inner tube with a gap therebetween, the exhaust holes comprise holes formed in a wall of the inner tube, an outer exhaust passage is formed between the inner tube and the outer tube and communicates with the exhaust holes, and the outer exhaust passage is connected to an exhaust apparatus disposed outside the process chamber.  
   
   
       9 . The apparatus according to  claim 7 , wherein the exhaust system comprises an exhaust pipe extending in a vertical direction at a position adjacent to edges of the target substrates, so as to be present substantially entirely over a vertical length of the target substrates stacked at intervals, and wherein the exhaust holes comprise holes formed in the exhaust pipe.  
   
   
       10 . The apparatus according to  claim 1 , wherein the first and second reactive gases comprise a combination selected from the group consisting of a first combination in which the first reactive gas is a silane family gas and the second reactive gas is ammonia gas, and a second combination in which the first reactive gas is an organic metal gas containing aluminum and the second reactive gas is an oxidizing gas.  
   
   
       11 . A vertical CVD apparatus for performing a CVD process on a plurality of target substrates all together, the apparatus comprising: 
 an airtight process chamber configured to accommodate the target substrates;    a holder configured to hold the target substrates stacked at intervals in the process chamber;    a heater configured to heat an atmosphere in the process chamber;    an exhaust system configured to exhaust the process chamber;    a supply system configured to supply process gases into the process chamber, the supply system comprising a first delivery hole connected to a first reactive gas line to supply a first reactive gas, and a plurality of second delivery holes connected to a second reactive gas line to supply a second reactive gas, wherein the first delivery hole is disposed at a substantial bottom of the process chamber, and the second delivery holes are arrayed in a vertical direction at a position adjacent to edges of the target substrates, so as to be distributed substantially entirely over a vertical length of the target substrates stacked at intervals; and    a control section configured to control an operation of the apparatus, so as to repeatedly execute first and second steps a plurality of times, thereby forming a thin film derived from the first and second reactive gases on the target substrates, wherein the first step is a performed by supplying one gas of the first and second reactive gases while stopping the other gas, so as to cause said one gas to be adsorbed on surfaces of the target substrates, and the second step is performed by supplying said other gas while stopping said one gas, so as to cause said other gas to act on said one gas adsorbed on the surfaces of the target substrates.    
   
   
       12 . The apparatus according to  claim 11 , wherein the supply system comprises a supply pipe extending in a vertical direction at a position adjacent to edges of the target substrates, so as to be present substantially entirely over a vertical length of the target substrates stacked at intervals, and wherein the second delivery holes comprise holes formed in the supply pipe.  
   
   
       13 . The apparatus according to  claim 11 , wherein the supply system comprises a first inactive gas line connected to the first delivery hole, and a second inactive gas line connected to the second delivery holes.  
   
   
       14 . The apparatus according to  claim 13 , wherein the control section is configured to execute a first purge step between the first and second steps, and execute a second purge step between the second and first steps, and wherein the first purge step is performed by exhausting the process chamber while supplying an inactive gas from the first delivery hole, so as to purge the first reactive gas from the process chamber, and the second purge step is performed by exhausting the process chamber while supplying an inactive gas from the second delivery holes, so as to purge the second reactive gas from the process chamber.  
   
   
       15 . The apparatus according to  claim 11 , wherein the exhaust system comprises an inner exhaust passage extending in a vertical direction at a position adjacent to edges of the target substrates, so as to be present substantially entirely over a vertical length of the target substrates stacked at intervals.  
   
   
       16 . The apparatus according to  claim 15 , wherein the process chamber comprises an inner tube configured to accommodate the holder, and an outer tube disposed concentrically with the inner tube with a gap therebetween, the inner exhaust passage is formed along an inner surface of the inner tube, an outer exhaust passage is formed between the inner tube and the outer tube and communicates with the inner exhaust passage at an end of the inner tube, and the outer exhaust passage is connected to an exhaust apparatus disposed outside the process chamber.  
   
   
       17 . The apparatus according to  claim 11 , wherein the exhaust system comprises a plurality of exhaust holes arrayed in a vertical direction at a position adjacent to edges of the target substrates, so as to be distributed substantially entirely over a vertical length of the target substrates stacked at intervals, and the first and second delivery holes are disposed on a first side of the process chamber and the exhaust holes are disposed on a second side of the process chamber opposite the first side.  
   
   
       18 . The apparatus according to  claim 17 , wherein the process chamber comprises an inner tube configured to accommodate the holder, and an outer tube disposed concentrically with the inner tube with a gap therebetween, the exhaust holes comprise holes formed in a wall of the inner tube, an outer exhaust passage is formed between the inner tube and the outer tube and communicates with the exhaust holes, and the outer exhaust passage is connected to an exhaust apparatus disposed outside the process chamber.  
   
   
       19 . The apparatus according to  claim 17 , wherein the exhaust system comprises an exhaust pipe extending in a vertical direction at a position adjacent to edges of the target substrates, so as to be present substantially entirely over a vertical length of the target substrates stacked at intervals, and wherein the exhaust holes comprise holes formed in the exhaust pipe.  
   
   
       20 . The apparatus according to  claim 11 , wherein the first and second reactive gases comprise a combination selected from the group consisting of a first combination in which the first reactive gas is a silane family gas and the second reactive gas is ammonia gas, a second combination in which the first reactive gas is an organic metal gas containing aluminum and the second reactive gas is an oxidizing gas, and a third combination in which the first reactive gas is an organic metal gas containing tantalum and the second reactive gas is an oxidizing gas.  
   
   
       21 . The apparatus according to  claim 11 , wherein the first reactive gas has a vapor pressure of 1.33 kPa or less, or a bond-dissociation energy of 250 kJ/mol or less.  
   
   
       22 . A method for performing a CVD process on a plurality of target substrates all together in a vertical CVD apparatus, 
 the apparatus comprising    an airtight process chamber configured to accommodate the target substrates,    a holder configured to hold the target substrates stacked at intervals in the process chamber,    a heater configured to heat an atmosphere in the process chamber,    an exhaust system configured to exhaust the process chamber, and    a supply system configured to supply process gases into the process chamber,    the method comprising:    a first step of supplying one gas of first and second reactive gases while stopping the other gas, so as to cause said one gas to be adsorbed on surfaces of the target substrates; and    a second step of supplying said other gas while stopping said one gas, so as to cause said other gas to act on said one gas adsorbed on the surfaces of the target substrates,    wherein the first and second steps are repeatedly executed a plurality of times, thereby forming a thin film derived from the first and second reactive gases on the target substrates, and    wherein the first reactive gas is supplied from a plurality of first delivery holes arrayed in a vertical direction at a position adjacent to edges of the target substrates, so as to be distributed substantially entirely over a vertical length of the target substrates stacked at intervals, and the second reactive gas is supplied from a plurality of second delivery holes arrayed in a vertical direction at a position adjacent to edges of the target substrates, so as to be distributed substantially entirely over a vertical length of the target substrates stacked at intervals.    
   
   
       23 . The method according to  claim 22 , wherein the first and second reactive gases comprise a combination selected from the group consisting of a first combination in which the first reactive gas is a silane family gas and the second reactive gas is ammonia gas, and a second combination in which the first reactive gas is an organic metal gas containing aluminum and the second reactive gas is an oxidizing gas.  
   
   
       24 . A method for performing a CVD process on a plurality of target substrates all together in a vertical CVD apparatus, 
 the apparatus comprising    an airtight process chamber configured to accommodate the target substrates,    a holder configured to hold the target substrates stacked at intervals in the process chamber,    a heater configured to heat an atmosphere in the process chamber,    an exhaust system configured to exhaust the process chamber, and    a supply system configured to supply process gases into the process chamber,    the method comprising:    a first step of supplying one gas of first and second reactive gases while stopping the other gas, so as to cause said one gas to be adsorbed on surfaces of the target substrates; and    a second step of supplying said other gas while stopping said one gas, so as to cause said other gas to act on said one gas adsorbed on the surfaces of the target substrates,    wherein the first and second steps are repeatedly executed a plurality of times, thereby forming a thin film derived from the first and second reactive gases on the target substrates, and    wherein the first reactive gas is supplied from a first delivery hole disposed at a substantial bottom of the process chamber, and the second reactive gas is supplied from a plurality of second delivery holes arrayed in a vertical direction at a position adjacent to edges of the target substrates, so as to be distributed substantially entirely over a vertical length of the target substrates stacked at intervals.    
   
   
       25 . The method according to  claim 24 , wherein the first and second reactive gases comprise a combination selected from the group consisting of a first combination in which the first reactive gas is a silane family gas and the second reactive gas is ammonia gas, a second combination in which the first reactive gas is an organic metal gas containing aluminum and the second reactive gas is an oxidizing gas, and a third combination in which the first reactive gas is an organic metal gas containing tantalum and the second reactive gas is an oxidizing gas.  
   
   
       26 . The method according to  claim 24 , wherein the first reactive gas has a vapor pressure of 1.33 kPa or less, or a bond-dissociation energy of 250 kJ/mol or less.