Semiconductor processing equipment for forming films of uniform properties on semiconductor substrates

Abstract

Processing equipment for forming films exhibiting at least one substantially uniform property on an active surface of a semiconductor substrate includes a component for continuously varying a reaction chamber temperature. The temperature variation component may operate under control of a feedback control system or a temperature regulator, which may be associated with one or more temperature sensors.

1 . A semiconductor processing assembly, comprising: 
 a reaction chamber configured to house at least one semiconductor substrate;    a heater located at least partially within the reaction chamber; and    a temperature regulator in communication with the heater and configured to continuously vary a thermal output of the heater.    
     
     
         2 . The semiconductor processing assembly of  claim 1 , further comprising: 
 at least one temperature sensor configured to sense a temperature and transmit a signal in response to a sensed temperature.    
     
     
         3 . The semiconductor processing assembly of  claim 2 , wherein the temperature regulator is also in communication with the at least one temperature sensor.  
     
     
         4 . The semiconductor processing assembly of  claim 3 , wherein the temperature regulator is configured to vary the thermal output of the heater.  
     
     
         5 . The semiconductor processing assembly of  claim 2 , comprising a plurality of temperature sensors for sensing temperatures at a corresponding plurality of locations.  
     
     
         6 . The semiconductor processing assembly of  claim 2 , wherein the at least one temperature sensor is configured to sense a temperature within the reaction chamber.  
     
     
         7 . The semiconductor processing assembly of  claim 2 , wherein the at least one temperature sensor is configured to sense a temperature of at least an area of the at least one semiconductor substrate.  
     
     
         8 . The semiconductor processing assembly of  claim 1 , wherein the temperature regulator is configured to vary the thermal output of the heater over a span of time.  
     
     
         9 . The semiconductor processing assembly of  claim 1 , wherein the reaction chamber comprises at least one of a hot wall furnace and a cold wall furnace.  
     
     
         10 . The semiconductor processing assembly of  claim 1 , wherein the reaction chamber comprises at least one of a vertical furnace and a horizontal furnace.  
     
     
         11 . The semiconductor processing assembly of  claim 1 , wherein the reaction chamber is configured to house only a single semiconductor substrate at a time.  
     
     
         12 . The semiconductor processing assembly of  claim 1 , wherein the reaction chamber comprises a plasma enhanced chamber.  
     
     
         13 . The semiconductor processing assembly of  claim 1 , wherein the reaction chamber comprises at least one of a high-pressure chamber, a low-pressure chamber, and an atmospheric-pressure chamber.  
     
     
         14 . The semiconductor processing assembly of  claim 1 , wherein the reaction chamber comprises at least one of a furnace and a rapid thermal processing chamber.  
     
     
         15 . The semiconductor processing assembly of  claim 1 , further comprising: 
 a rotator within the reaction chamber.    
     
     
         16 . The semiconductor processing assembly of  claim 15 , wherein the rotator is configured to rotate the at least one semiconductor substrate.  
     
     
         17 . A supplement to a fabrication chamber configured to perform a deposition process on a substrate, the supplement comprising: 
 a variable substrate temperature generation system configured to operate in cooperation with initiation of the deposition process, the variable substrate temperature generation system comprising a heating element of the fabrication chamber, the variable substrate temperature generation system configured to cause the heating element of the fabrication chamber to continuously alter a thermal output within the fabrication chamber.    
     
     
         18 . The supplement of  claim 17 , wherein the variable substrate temperature generation system also comprises at least one temperature sensor.  
     
     
         19 . The supplement of  claim 18 , wherein the variable substrate temperature generation system also comprises a feedback control system in communication with the at least one temperature sensor.  
     
     
         20 . The supplement of  claim 19 , wherein the variable substrate temperature generation system is configured to cause the heating element of the fabrication chamber to continuously alter the thermal output within the fabrication chamber in response to transmission of a signal from the at least one temperature sensor.  
     
     
         21 . The supplement of  claim 20 , wherein the feedback control system is configured to receive the signal and to alter power provided to the heating element in response to the signal.