Method of manufacturing electronic device

Abstract

After forming an insulating film on an underlying layer, a resist pattern is formed on the insulating film. The insulating film is etched by using the resist pattern as a mask, thereby forming an insulating film pattern. Without removing the resist pattern, exposed portions of the underlying layer and the insulating film pattern are subjected to a plasma treatment, cleaning, a heat treatment or the like, so that a deposition grown during the formation of the insulating film pattern can be removed. Thereafter, the underlying layer is etched by using at least the insulating film pattern as a mask. As a result, even when a strict pattern rule is employed, pattern defects can be prevented from being caused in etching a multi-layer film.

1 . A method of manufacturing an electronic device comprising the steps of: 
 (a) forming, on an underlying layer, an insulating film made from one of an oxide film, a nitride film, an oxinitride film, an organic film and an organic-inorganic hybrid film;    (b) forming a resist pattern on said insulating film;    (c) forming an insulating film pattern by etching said insulating film with said resist pattern used as a mask;    (d) conducting a plasma treatment on exposed portions of said underlying layer and said insulating film pattern without removing said resist pattern after the step (c); and    (e) etching said underlying layer with said resist pattern and said insulating film pattern used as a mask.    
   
   
       2 . The method of manufacturing an electronic device of  claim 1 , 
 wherein said underlying layer is made from one of a monosilicon layer, a silicon substrate, a polysilicon film, an amorphous silicon film, an organic film, an organic-inorganic hybrid film, a nitride film and an oxide film, and    said underlying layer is etched with a chlorine-containing gas or a bromine-containing gas in the step (e).    
   
   
       3 . The method of manufacturing an electronic device of  claim 1 , 
 wherein said insulating film is made from one of an oxide film, a nitride film, an oxinitride film, an organic film and an organic-inorganic hybrid film.    
   
   
       4 . The method of manufacturing an electronic device of  claim 3 , 
 wherein said insulating film is a silicon nitride film, and    said insulating film of said silicon nitride film is etched with a fluorine-containing gas in the step (c).    
   
   
       5 . The method of manufacturing an electronic device of  claim 1 , 
 wherein said underlying layer is one of a surface portion of a silicon substrate, an electrode, an interconnect and an interlayer insulating film.    
   
   
       6 . A method of manufacturing an electronic device comprising the steps of: 
 (a) forming an insulating film on an underlying layer;    (b) forming a resist pattern on said insulating film;    (c) forming an insulating film pattern by etching said insulating film with said resist pattern used as a mask;    (d) cleaning said underlying layer after the step (c); and    (e) etching said underlying layer with at, least said insulating film pattern used as a mask.    
   
   
       7 . The method of manufacturing an electronic device of  claim 6 , 
 wherein water is used as a cleaning solution in the step (d).    
   
   
       8 . The method of manufacturing an electronic device of  claim 6 , 
 wherein a cleaning solution is kept at 50° C. or more in the step (d).    
   
   
       9 . The method of manufacturing an electronic device of  claim 6 , 
 wherein an aqueous solution of tetramethyl ammonium hydride is used as a cleaning solution in the step (d).    
   
   
       10 . The method of manufacturing an electronic device of  claim 6 , 
 wherein a diluted hydrofluoric acid aqueous solution is used as a cleaning solution in the step (d).    
   
   
       11 . The method of manufacturing an electronic device of  claim 6 , 
 wherein said insulating film is made from one of an oxide film, a nitride film, an oxinitride film, an organic film and an organic-inorganic hybrid film.    
   
   
       12 . The method of manufacturing an electronic device of  claim 11 , 
 wherein said insulating film is a silicon nitride film or a silicon oxinitride film, and    the method further comprises a step of exposing a substrate to the air between the step (c) and the step (d).    
   
   
       13 . The method of manufacturing an electronic device of  claim 6 , 
 wherein said underlying layer is made from one of a monosilicon layer, a silicon substrate, a polysilicon film, an amorphous silicon film, an organic film, an organic-inorganic hybrid film, a nitride film and an oxide film, and    said underlying layer is etched with a chlorine-containing gas or a bromine-containing gas in the step (e).    
   
   
       14 . The method of manufacturing an electronic device of  claim 13 , 
 wherein said insulating film is a silicon nitride film, and    said insulating film of said silicon nitride film is etched with a fluorine-containing gas in the step (c).    
   
   
       15 . The method of manufacturing an electronic device of  claim 6 , 
 wherein said underlying layer is one of a surface portion of a silicon substrate, an electrode, an interconnect and an interlayer insulating film.    
   
   
       16 . A method of manufacturing an electronic device comprising the steps of: 
 (a) forming an insulating film on an underlying layer;    (b) forming a resist pattern on said insulating film;    (c) forming an insulating film pattern by etching said insulating film with said resist pattern used as a mask;    (d) conducting a heat treatment on a substrate without removing said resist pattern after the step (c); and    (e) etching said underlying layer with said resist pattern and said insulating film pattern used as a mask.    
   
   
       17 . The method of manufacturing an electronic device of  claim 16 , 
 wherein said heat treatment is conducted under vacuum in the step (d).    
   
   
       18 . The method of manufacturing an electronic device of  claim 16 , 
 wherein said underlying layer is made from one of a monosilicon layer, a silicon substrate, a polysilicon film, an amorphous silicon film, an organic film, an organic-inorganic hybrid film, a nitride film and an oxide film, and    said underlying layer is etched with a chlorine-containing gas or a bromine-containing gas in the step (e).    
   
   
       19 . The method of manufacturing an electronic device of  claim 16 , 
 wherein said insulating film is made from one of an oxide film, a nitride film, an oxinitride film, an organic film, and an organic-inorganic hybrid film.    
   
   
       20 . The method of manufacturing an electronic device of  claim 19 , 
 wherein said insulating film is a silicon nitride film, and    said insulating film of said silicon nitride film is etched with a fluorine-containing gas in the step (c).    
   
   
       21 . The method of manufacturing an electronic device of  claim 16 , 
 wherein said underlying layer is one of a surface portion of a silicon substrate, an electrode, an interconnect and an interlayer insulating film.    
   
   
       22 . A method of manufacturing an electronic device comprising the steps of: 
 (a) forming an insulating film including nitrogen on an underlying layer;    (b) conducting a heat treatment on said insulating film for removing NH x , wherein x is an arbitral value;    (c) forming a resist pattern on said insulating film;    (d) forming an insulating film pattern by etching said insulating film with said resist pattern used as a mask; and    (e) etching said underlying layer with said resist pattern and said insulating film pattern used as a mask.    
   
   
       23 . A method of manufacturing an electronic device comprising the steps of: 
 (a) forming an insulating film on an underlying layer;    (b) forming a protecting film on said insulating film;    (c) forming a resist pattern on said protecting film;    (d) forming an insulating film pattern by etching said protecting film and said insulating film with said resist pattern used as a mask; and    (e) etching said underlying layer with said resist pattern and said insulating film pattern used as a mask.    
   
   
       24 . The method of manufacturing an electronic device of  claim 23 , 
 wherein said insulating film is made from one of an oxide film, a nitride film, an oxinitride film, an organic film and an organic-inorganic hybrid film.    
   
   
       25 . The method of manufacturing an electronic device of  claim 24 , 
 wherein said insulating film is a silicon nitride film, and    said protecting film is an oxide film formed by oxidizing a surface portion of said insulating film in the step (b).    
   
   
       26 . The method of manufacturing an electronic device of  claim 23 , 
 wherein said protecting film is made from at least one of a silicon oxide film and a silicon oxinitride film.    
   
   
       27 . The method of manufacturing an electronic device of  claim 23 , 
 wherein said underlying layer is made from one of a monosilicon layer, a silicon substrate, a polysilicon film, an amorphous silicon film, an organic film, an organic-inorganic hybrid film, a nitride film and an oxide film, and    said underlying layer is etched with a chlorine-containing gas or a bromine-containing gas in the step (e).    
   
   
       28 . The method of manufacturing an electronic device of  claim 27 , 
 wherein said underlying layer is a silicon nitride film, and    said insulating film is etched with a fluorine-containing gas in the step (d).    
   
   
       29 . The method of manufacturing an electronic device of  claim 27 , 
 wherein said underlying layer is one of a surface portion of a silicon substrate, an electrode, an interconnect and an interlayer insulating film.