Post-dry etching cleaning liquid composition and process for fabricating semiconductor device

Abstract

A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

1 . A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching, the composition comprising at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water.  
     
     
         2 . The post-dry etching cleaning liquid composition according to  claim 1 , wherein the fluorine compound is ammonium fluoride.  
     
     
         3 . The post-dry etching cleaning liquid composition according to  claim 1 , wherein the organic acid salt is at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate.  
     
     
         4 . The post-dry etching cleaning liquid composition according to  claim 1 , wherein the cleaning liquid composition further comprises a surfactant.  
     
     
         5 . The post-dry etching cleaning liquid composition according to  claim 1 , wherein the cleaning liquid composition contains no organic solvent.  
     
     
         6 . The post-dry etching cleaning liquid composition according to  claim 1 , wherein the cleaning liquid composition is used for cleaning a substrate in which a wiring material formed from at least one of copper and a copper alloy and an interlayer insulating film formed from at least one of a low dielectric constant film and silicon oxide are exposed by dry etching.  
     
     
         7 . The post-dry etching cleaning liquid composition according to  claim 2 , wherein the cleaning liquid composition is used for cleaning a substrate in which a wiring material formed from at least one of copper and a copper alloy and an interlayer insulating film formed from at least one of a low dielectric constant film and silicon oxide are exposed by dry etching.  
     
     
         8 . The post-dry etching cleaning liquid composition according to  claim 3 , wherein the cleaning liquid composition is used for cleaning a substrate in which a wiring material formed from at least one of copper and a copper alloy and an interlayer insulating film formed from at least one of a low dielectric constant film and silicon oxide are exposed by dry etching.  
     
     
         9 . The post-dry etching cleaning liquid composition according to  claim 4 , wherein the cleaning liquid composition is used for cleaning a substrate in which a wiring material formed from at least one of copper and a copper alloy and an interlayer insulating film formed from at least one of a low dielectric constant film and silicon oxide are exposed by dry etching.  
     
     
         10 . The post-dry etching cleaning liquid composition according to  claim 5 , wherein the cleaning liquid composition is used for cleaning a substrate in which a wiring material formed from at least one of copper and a copper alloy and an interlayer insulating film formed from at least one of a low dielectric constant film and silicon oxide are exposed by dry etching.  
     
     
         11 . A process for fabricating a semiconductor device, the process comprising: 
 a step of cleaning, using the post-dry etching cleaning liquid composition according to  claim 6 , a substrate that has been subjected to ashing removal of a mask pattern after dry etching through the mask pattern.    
     
     
         12 . A process for fabricating a semiconductor device, the process comprising: 
 a step of cleaning, using the post-dry etching cleaning liquid composition according to  claim 7 , a substrate that has been subjected to ashing removal of a mask pattern after dry etching through the mask pattern.    
     
     
         13 . A process for fabricating a semiconductor device, the process comprising: 
 a step of cleaning, using the post-dry etching cleaning liquid composition according to  claim 8 , a substrate that has been subjected to ashing removal of a mask pattern after dry etching through the mask pattern.    
     
     
         14 . A process for fabricating a semiconductor device, the process comprising: 
 a step of cleaning, using the post-dry etching cleaning liquid composition according to  claim 9 , a substrate that has been subjected to ashing removal of a mask pattern after dry etching through the mask pattern.    
     
     
         15 . A process for fabricating a semiconductor device, the process comprising: 
 a step of cleaning, using the post-dry etching cleaning liquid composition according to  claim 10 , a substrate that has been subjected to ashing removal of a mask pattern after dry etching through the mask pattern.    
     
     
         16 . A process for fabricating a semiconductor device, the process comprising: 
 a step of patterning an insulating film formed above a substrate by dry etching through a mask pattern formed on the insulating film; and    a step of cleaning, as a post-patterning treatment using a post-dry etching cleaning liquid composition, the substrate that has been subjected to the patterning of the insulating film, the cleaning liquid composition comprising at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water.    
     
     
         17 . The process for fabricating a semiconductor device according to  claim 16 , wherein the insulating film is formed using a low dielectric constant material.  
     
     
         18 . The process for fabricating a semiconductor device according to  claim 16 , wherein the insulating film is formed from a low dielectric constant film with an inorganic material film thereon.  
     
     
         19 . The process for fabricating a semiconductor device according to  claim 16 , wherein the mask pattern is formed from an inorganic material.  
     
     
         20 . The process for fabricating a semiconductor device according to  claim 16 , wherein a metal material layer beneath the insulating film is exposed by patterning of the insulating film.  
     
     
         21 . The process for fabricating a semiconductor device according to  claim 16 , wherein after the cleaning step an inner wall of a trench pattern formed by patterning of the insulating film is covered by a conductive thin film, and a conductive material is embedded within the trench pattern via the conductive thin film.