Plasma processing apparatus and method

Abstract

Disclosed is a plasma processing apparatus and a plasma processing method, by which ions of plasma can be injected uniformly over the whole surface of a substrate to be processed, in a short time. Specifically, when the substrate is processed in a reaction container, the gas pressure inside the reaction container is increased. Alternatively, the distance between a plasma processing portion and the substrate is enlarged, or the substrate is temporally moved outwardly of the reaction container. As a further alternative, a shutter is disposed between the plasma producing zone and the substrate. With this procedure, incidence of ions of the plasma upon the substrate can be substantially intercepted for a predetermined time period from the start of plasma production.

1 . In an apparatus for processing a substrate to be processed, in a reaction container by plasma, the improvements comprising: 
 intercepting means for substantially intercepting incidence of ions of the plasma upon the substrate, for a predetermined time period from start of production of the plasma.    
   
   
       2 . An apparatus according to  claim 1 , wherein said intercepting means includes pressure controlling means for increasing a gas pressure inside said reaction container, for substantial interception of ions.  
   
   
       3 . An apparatus according to  claim 1 , wherein said intercepting means includes a shutter disposed between a plasma producing zone and the substrate, for substantial interception of ions.  
   
   
       4 . An apparatus according to  claim 1 , wherein said intercepting means includes a stage for retracting the substrate to a position not to be irradiated with ions, for substantial interception of ions.  
   
   
       5 . An apparatus according to  claim 1 , wherein said intercepting means includes a stage for moving the substrate away from a plasma producing zone, for substantial interception of ions.  
   
   
       6 . An apparatus according to any one of claims  1 - 5 , wherein the plasma is microwave plasma.  
   
   
       7 . In a method of processing a substrate to be processed, in a reaction container by plasma, the improvements comprising: 
 substantially intercepting incidence of ions of the plasma upon the substrate, for a predetermined time period from start of production of the plasma.