Method for controlling the temperature of a gas distribution plate in a process reactor

Abstract

A plasma process reactor and method is disclosed that allows for greater control in varying the functional temperature range for enhancing semiconductor processing and reactor cleaning. The temperature is controlled by splitting the process gas flow from a single gas manifold that injects the process gas behind the gas distribution plate into two streams where the first stream goes behind the gas distribution plate and the second stream is injected directly into the chamber. By decreasing the fraction of flow that is injected behind the gas distribution plate, the temperature of the gas distribution plate can be increased. The increasing of the temperature of the gas distribution plate results in higher O 2 plasma removal rates of deposited material from the gas distribution plate. Additionally, the higher plasma temperature aids other processes that only operate at elevated temperatures not possible in a fixed temperature reactor.

1 . A cleaning method comprising: 
 separating a first region from a second region of a reactor using a first gas distribution plate having a top surface and a bottom surface with a plurality of apertures therethrough;    introducing the first gas flow stream into the first region of the reactor; and    introducing the second gas flow stream into the second region of the reactor substantially bypassing the first region.    
   
   
       2 . The method of  claim 1 , further comprising introducing the first gas flow stream and the second gas flow stream as a fraction of the single process gas flow stream.  
   
   
       3 . The method of  claim 2 , further comprising: 
 varying a temperature within at least one of the first region and the second region by varying a fraction of process gas flow which flows into the first region.    
   
   
       4 . The method of  claim 2 , further comprising: 
 forming a partial pressure in the first region such that a temperature of a plasma formed in the reactor increases as a partial pressure decreases.    
   
   
       5 . The method of  claim 1 , further comprising evacuating the reactor.  
   
   
       6 . The method of  claim 1 , further comprising: 
 increasing a temperature of surfaces cooled by gases in the first region by introducing the second gas flow stream into the second region substantially bypassing the first region.    
   
   
       7 . A method for controlling the rate of etching patterns comprising: 
 separating a first region from a second region of a reactor using a first gas distribution plate having a top surface and a bottom surface with a plurality of apertures therethrough;    introducing the first gas flow stream into the first region of the reactor; and    introducing the second gas flow stream into the second region of the reactor substantially bypassing the first region.    
   
   
       8 . The method of  claim 7 , further comprising introducing the first gas flow stream and the second gas flow stream as a fraction of the single process gas flow stream.  
   
   
       9 . The method of  claim 8 , further comprising: 
 varying a temperature within at least one of the first region and the second region by varying a fraction of process gas flow which flows into the first region.    
   
   
       10 . The method of  claim 8 , further comprising: 
 forming a partial pressure in the first region such that a temperature of a plasma formed in the reactor increases as a partial pressure decreases.    
   
   
       11 . The method of  claim 7 , further comprising evacuating the reactor.  
   
   
       12 . The method of  claim 7 , further comprising: 
 increasing a temperature of surfaces cooled by gases in the first region by introducing the second gas flow stream into the second region substantially bypassing the first region.    
   
   
       13 . A method of etching comprising: 
 separating a first region from a second region of a reactor using a first gas distribution plate having a top surface and a bottom surface with a plurality of apertures therethrough;    introducing the first gas flow stream into the first region of the reactor; and    introducing the second gas flow stream into the second region of the reactor substantially bypassing the first region.    
   
   
       14 . The method of  claim 13 , further comprising introducing the first gas flow stream and the second gas flow stream as a fraction of the single process gas flow stream.  
   
   
       15 . The method of  claim 14 , further comprising: 
 varying a temperature within at least one of the first region and the second region by varying a fraction of process gas flow which flows into the first region.    
   
   
       16 . The method of  claim 13 , further comprising: 
 forming a partial pressure in the first region such that a temperature of a plasma formed in the reactor increases as a partial pressure decreases.    
   
   
       17 . The method of  claim 13 , further comprising evacuating the reactor.  
   
   
       18 . The method of  claim 13 , further comprising: 
 increasing a temperature of surfaces cooled by gases in the first region by introducing the second gas flow stream into the second region substantially bypassing the first region.