Semiconductor device which includes a capacitor and an interconnection film coupled to each other and a manufacturing method thereof

Abstract

A semiconductor device includes a semiconductor substrate and a capacitor which is disposed on a principal surface of the semiconductor substrate. The capacitor includes a lower electrode film disposed on the principal surface of the semiconductor substrate, a dielectric film disposed on the lower electrode and an upper electrode film disposed on the dielectric film. The semiconductor device further includes an interconnection film which includes a portion disposed on the upper electrode film so as to be electrically coupled to the upper electrode film. Directions of residual stresses of the upper electrode film coincide with directions of residual stresses of the portion of the interconnection film. Each of the upper electrode film and the interconnection film may include at least one of platinum and iridium. Also, there is provided a method of manufacturing the semiconductor device.

1 . A semiconductor device comprising: 
 a semiconductor substrate having a principal surface;    a lower electrode film disposed on the principal surface of the semiconductor substrate;    a dielectric film disposed on the lower electrode;    an upper electrode film disposed on the dielectric film, wherein the lower electrode film, the dielectric film and the upper electrode film constitute a capacitor; and    an interconnection film including a portion disposed on the upper electrode film so as to be electrically coupled to the upper electrode film, wherein directions of residual stresses of the upper electrode film coincide with directions of residual stresses of the portion of the interconnection film.    
   
   
       2 . The semiconductor device according to  claim 1 , wherein the directions of the residual stresses of the upper electrode film extend from a peripheral portion of the upper electrode film toward a central portion of the upper electrode film.  
   
   
       3 . The semiconductor device according to  claim 1 , wherein the directions of the residual stresses of the upper electrode film and the interconnection film are tensile residual stresses against the principal surface of the semiconductor substrate.  
   
   
       4 . The semiconductor device according to  claim 1 , wherein the directions of the residual stresses of the upper electrode film and the interconnection film are parallel to the principal surface of the semiconductor substrate.  
   
   
       5 . The semiconductor device according to  claim 1 , wherein each of the upper electrode film and the interconnection film includes at least one of platinum and iridium.  
   
   
       6 . The semiconductor device according to  claim 1 , wherein the dielectric film includes at least one of strontium bismuth tantalate, plumbum zirconate titanate and bismuth lanthanum titanate.  
   
   
       7 . The semiconductor device according to  claim 1 , wherein the interconnection film is a first interconnection film and the residual stresses of the interconnection film are first residual stresses, the semiconductor device further comprising: 
 a second interconnection film, having second residual stresses, disposed on the first interconnection film so as to extend along the first interconnection film, wherein directions of the second residual stresses extend opposite to the directions of the first residual stresses; and    an insulating film disposed on the second interconnection film so as to cover the first and second interconnection films and the capacitor, wherein the insulating film is attached to the second interconnection film.    
   
   
       8 . The semiconductor device according to  claim 7 , wherein the second interconnection film includes titanium nitride.  
   
   
       9 . The semiconductor device according to  claim 7 , wherein a ratio of a thickness of the first interconnection film to a thickness of the second interconnection film ranges from 0.5 to 5.83.  
   
   
       10 . The semiconductor device according to  claim 7 , further including: 
 a third interconnection film disposed between the upper electrode film and the first interconnection film so as to extend along the first interconnection film, wherein the third interconnection film has third residual stresses, and wherein directions of the third residual stresses extend opposite to the directions of the first residual stresses; and    an interlayer insulating film disposed between the third interconnection film and the surface of the semiconductor substrate so as to cover the capacitor with being attached to the third interconnection layer.    
   
   
       11 . The semiconductor device according to  claim 10 , wherein the third interconnection film includes titanium nitride.  
   
   
       12 . The semiconductor device according to  claim 10 , wherein a ratio of a thickness of the first interconnection film to a sum of thicknesses of the second and third inter connection films ranges approximately from 0.5 to 5.83.  
   
   
       13 . A semiconductor device comprising: 
 a semiconductor substrate having a principal surface;    a lower electrode film disposed on the principal surface of the semiconductor substrate;    a dielectric film disposed on the lower electrode;    an upper electrode film disposed on the dielectric film, wherein the upper electrode film includes at least one of platinum and iridium and wherein the lower electrode film, the dielectric film and the upper electrode film constitute a capacitor; and    an interconnection film including a portion disposed on the upper electrode film so as to be electrically coupled to the upper electrode film, wherein the portion of the interconnection film includes at least one of platinum and iridium.    
   
   
       14 . The semiconductor device according to  claim 13 , wherein the dielectric film includes at least one of strontium bismuth tantalate, plumbum zirconate titanate and bismuth lanthanum titanate.  
   
   
       15 . The semiconductor device according to  claim 1 , wherein the interconnection film is a first interconnection film, further comprising: 
 a second interconnection film disposed on the first interconnection film so as to extend along the first interconnection film, wherein the second interconnection film includes titanium nitride; and    an insulating film disposed on the second interconnection film so as to cover the first and second interconnection films and the capacitor, wherein the insulating film is attached to the second interconnection film.    
   
   
       16 . The semiconductor device according to  claim 15 , wherein a ratio of a thickness of the first interconnection film to a thickness of the second interconnection film ranges from 0.5 to 5.83.  
   
   
       17 . The semiconductor device according to  claim 15 , further including: 
 a third interconnection film disposed between the upper electrode film and the first interconnection film so as to extend along the first interconnection film, wherein the third interconnection film includes titanium nitride; and    an interlayer insulating film disposed between the third interconnection film and the surface of the semiconductor substrate so as to cover the capacitor with being attached to the third interconnection layer.    
   
   
       18 . The semiconductor device according to  claim 17 , wherein a ratio of a thickness of the first interconnection film to a sum of thicknesses of the second and third interconnection films ranges approximately from 0.5 to 5.83.  
   
   
       19 . A manufacturing method of a semiconductor device, comprising: 
 providing a semiconductor substrate having a principal surface;    forming a lower electrode film on the principal surface of the semiconductor substrate;    forming a dielectric film on the lower electrode;    forming an upper electrode film on the dielectric film, wherein directions of residual stresses of the upper electrode film are parallel to the principal surface of the semiconductor substrate, and wherein said forming the lower electrode film, said forming the dielectric film and said forming the upper electrode film constitute a capacitor; and    forming an interconnection film on the upper electrode film so as to be electrically connected to the upper electrode film, wherein directions of residual stresses of the interconnection film is the same as the directions of the residual stresses of the upper electrode film.    
   
   
       20 . The manufacturing method according to  claim 19 , wherein the residual stresses of the upper electrode film and the interconnection film are tensile residual stresses against the principal surface of the semiconductor substrate.  
   
   
       21 . The manufacturing method according to  claim 19 , wherein the interconnection film is a first interconnection film and the residual stresses of the interconnection film are first residual stresses, the semiconductor device further comprising: 
 forming a second interconnection film having second residual stresses on the first interconnection film so as to extend along the first interconnection film, wherein directions of the second residual stresses extend opposite to the directions of the first residual stresses; and    forming an insulating film on the second interconnection film so as to cover the first and second interconnection films and the capacitor, wherein the insulating film is attached to the second interconnection film.    
   
   
       22 . The semiconductor device according to  claim 21 , further including: 
 forming an interlayer insulating film on the principal surface of the semiconductor substrate, so as to expose an upper surface of the upper electrode film; and    forming a third interconnection film having third residual stresses on the upper electrode film and the interlayer insulating film so as to be electrically connected to the upper surface of the upper electrode film, wherein directions of the third residual stresses extend opposite to the directions of the first residual stresses,    wherein the first interconnection film is formed after said forming the third interconnection film, so as to extend along the third interconnection film.    
   
   
       23 . A manufacturing method of a semiconductor device, comprising: 
 providing a semiconductor substrate having a principal surface;    forming a lower electrode film on the principal surface of the semiconductor substrate;    forming a dielectric film on the lower electrode;    forming an upper electrode film on the dielectric film, wherein the upper electrode film includes at least one of platinum and iridium, and wherein said forming the lower electrode film, said forming the dielectric film and said forming the upper electrode film constitute a capacitor; and    forming an interconnection film on the upper electrode film so as to be electrically connected to the upper electrode film, wherein the interconnection film includes at least one of platinum and iridium.    
   
   
       24 . The manufacturing method according to  claim 23 , wherein the interconnection film is a first interconnection film, further comprising: 
 forming a second interconnection film including titanium nitride on the first interconnection film so as to extend along the first interconnection film; and    forming an insulating film on the second interconnection film so as to cover the first and second interconnection films and the capacitor, wherein the insulating film is attached to the second interconnection film.    
   
   
       25 . The semiconductor device according to  claim 24 , further including: 
 forming an interlayer insulating film on the principal surface of the semiconductor substrate, so as to expose an upper surface of the upper electrode film; and    forming a third interconnection film including titanium nitride on the upper electrode film and the interlayer insulating film so as to be electrically connected to the upper surface of the upper electrode film,    wherein the first interconnection film is formed after said forming the third interconnection film, so as to extend along the third interconnection film.