Economical and very simple to fabricate single device equivalent to CMOS, and other semiconductor devices in compensated semiconductor

Abstract

Semiconductor devices formed in fully or partially compensated semiconductor, substrate or epi-layer , including minimal current flow voltage switching devices with at least one junction which is rectifying when the semiconductor is caused to be N or P-type by the presence of applied gate voltage field induced carriers, such as inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems.

1 . A semiconductor system comprising a semiconductor device in a semiconductor region characterized by at least one selection from the group consisting of: 
 said semiconductor region contains both N and P-type metallurgical dopants essentially homogeneously distributed therein at substantially equal doping levels; and    said semiconductor region contains both N and P-type metallurgical dopants essentially homogeneously distributed therein at substantially different doping levels;    said semiconductor device comprising at least one junction(s) characterized by at least one selection from the group consisting of: 
 rectifying; <formed from non-semiconductor, and semiconductor, components, wherein said non-semiconductor component of said at least one junction(s) is comprised of at least one material(s) which forms rectifying junctions with both N and P-type semiconductor, whether said semiconductor type is metallurgically or field induced; and  
   essentially ohmic.    
   
   
       2 . A semiconductor system comprising a semiconductor device in a semiconductor region characterized by at least one selection from the group consisting of: 
 said semiconductor region contains both N and P-type metallurgical dopants essentially homogeneously distributed therein at substantially equal doping levels; and    said semiconductor region contains both N and P-type metallurgical dopants essentially homogeneously distributed therein at substantially different doping levels;    said semiconductor device comprising a plurality of junctions, each being characterized by a selection from the group consisting of: 
 rectifying;  
 formed from non-semiconductor, and semiconductor, components, wherein said non-semiconductor component of said at least one junction(s) is comprised of at least one material(s) which forms rectifying junctions with both N and P-type semiconductor, whether said semiconductor type is metallurgically or field induced; and  
   essentially ohmic; and    arranged as a selection from the group consisting of a-g:    a.    being essentially ohmic; and    comprising non-semiconductor, and semiconductor, components, wherein said non-semiconductor component is comprised of at least one material(s) which forms rectifying junctions with both N and P-type semiconductor, whether said semiconductor type is metallurgically or field induced;    b.    comprising non-semiconductor, and semiconductor, components, wherein said non-semiconductor component is comprised of at least one material(s) which forms rectifying junctions with both N and P-type semiconductor, whether said semiconductor type is metallurgically or field induced; and    comprising non-semiconductor, and semiconductor, components, wherein said non-semiconductor component is comprised of at least one material(s) which forms rectifying junctions with both N and P-type semiconductor, whether said semiconductor type is metallurgically or field induced;    c.    being essentially ohmic;    comprising non-semiconductor, and semiconductor, components, wherein said non-semiconductor component is comprised of at least one material(s) which forms rectifying junctions with both N and P-type semiconductor, whether said semiconductor type is metallurgically or field induced;    comprising non-semiconductor, and semiconductor, components, wherein said non-semiconductor component is comprised of at least one material(s) which forms rectifying junctions with both N and P-type semiconductor, whether said semiconductor type is metallurgically or field induced; and    being essentially ohmic;    d.    being substantially ohmic;    being rectifying;    being rectifying; and    being substantially ohmic;    e.    being rectifying; and    being rectifying;    f.    being substantially ohmic; and    being rectifying;    g.    comprising non-semiconductor, and semiconductor, components, wherein said non-semiconductor component is comprised of at least one material(s) which forms rectifying junctions with both N and P-type semiconductor, whether said semiconductor type is metallurgically or field induced;    being essentially ohmic;    being essentially ohmic; and    comprising non-semiconductor, and semiconductor, components, wherein said non-semiconductor component is comprised of at least one material(s) which forms rectifying junctions with both N and P-type semiconductor, whether said semiconductor type is metallurgically or field induced;    
   
   
       3 . Inverting and non-inverting devices with operating characteristics similar to dual device seriesed N and P-Channel MOSFETS CMOS systems; comprising in use, two oppositely facing electrically interconnected rectifying diodes in a semiconductor region characterized by at least one selection from the group consisting of: 
 said semiconductor region contains both N and P-type metallurgical dopants essentially homogeneously distributed therein at    substantially equal doping levels; and    said semiconductor region contains both N and P-type metallurgical dopants essentially homogeneously distributed therein at substantially different doping levels;    wherein a forward direction of rectification of each of said electrically interconnected rectifying diodes changes depending upon what doping type, (N or P), be it metallurgically or field induced, is present in the semiconductor, said inverting and non-inverting single device equivalents to dual device seriesed N and P-Channel MOSFETS CMOS systems further comprising gate means for field inducing effective doping type in said semiconductor, said gate means being set off from said semiconductor by insulator and each of said electrically interconnected rectifying diodes having an electrically non-interconnected terminal; and wherein, in use, different voltages are applied to the non-electrically interconnected terminal of each of the oppositely facing rectifying diodes, and a voltage between said applied different voltages, inclusive, is monitored at the electrical interconnection between said two oppositely facing rectifying diodes, which monitored voltage responds as a function of applied gate voltage, said monitored voltage being essentially electrically isolated from said gate voltage and appearing at said electrical interconnection between said two oppositely facing rectifying diodes primarily through the rectifying diode which becomes forward biased;    the basis of operation of said gate voltage channel induced semiconductor devices being that said rectifying junctions are comprised of material(s) that form a rectifying junction to semiconductor when it is doped either N or P-type by either metallurgical or field induced means.    
   
   
       4 . A semiconductor device formed in a semiconductor region characterized as single crystal or amorphous or an intermediate thereto, in which are essentially homogeneously simultaneously present both N and P-type metallurgical dopants, said semiconductor device comprising at least one rectifying junction which is formed from non-semiconductor and semiconductor components, wherein said junction non-semiconductor component is comprised of material(s) which, in use, form a rectifying junction with both N and P-type semiconductor, whether metallurgically or field induced.  
   
   
       5 - 23 . (canceled)