Method for doping semiconductor layer, method for manufacturing thin film semiconductor device, and thin film semiconductor device

Abstract

A low concentration impurity diffusion region is formed with good controllability even in case of using a low heat resistant substrate. When doping a semiconductor layer, after forming the semiconductor layer on the substrate, the amount of the dopant ion adsorbed on a surface of the semiconductor layer is controlled by introducing hydrogen gas at the time of plasma irradiation and activating the adsorbed dopant ion in the semiconductor layer by an excimer laser.

1 - 20 . (canceled)  
   
   
       21 . A thin film semiconductor device, comprising: 
 a thin film semiconductor layer formed on an insulating substrate;    source and drain regions formed in the semiconductor layer; and    a pair of low concentration impurity diffusion regions are formed in the channel sides of the source and drain regions by controlling the amount of the dopant ion adsorbed on the surface of the semiconductor layer and followed by activating the adsorbed dopant ion.