Gallium nitride based light emitting device and the fabricating method for the same

Abstract

A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting body has some GaN-based layers and is capable of emitting a light when energy is applied. The light extraction layer is a double layered structure having a current spreading layer and a micro-structure layer, or a single layered structure without the current spreading layer. The micro-structure layer is a TiN layer with a nano-net structure obtained by nitridation of a Ti layer or a Pt layer with metal clusters thereon obtained by annealing of a Pt layer.

1 - 12 . (canceled)  
   
   
       13 . A method of manufacturing a gallium nitride (GaN) based light-emitting device (LED), comprising the steps of: 
 preparing a substrate;    forming an n-type GaN-based layer over said substrate;    forming a semiconductor active layer over said n-type GaN-based layer;    forming a p-type GaN-based layer over said semiconductor active layer;    forming a current spreading layer over said p-GaN-based layer; and    forming a micro-net layer over said current spreading layer.    
   
   
       14 . The method according to  claim 13 , further comprising a step of forming a p-type electrode and an n-type electrode over said LED after said step of forming said micro-net layer and wherein said p-type electrode is formed over said micro-net structure or beside said micro-structure layer and said current spreading layer.  
   
   
       15 . The method according to  claim 13 , wherein said current spreading layer is a transparent and conductive layer and selected from a group consisting of a Ni/Au double layer structure, Ni, Pt, Pd, Rh, Ru, Os, Ir, Zn, In, Sn, Mg and an oxide thereof.  
   
   
       16 . The method according to  claim 13 , wherein said step of forming a micro-structure layer further comprises a step of forming a Ti layer over said p-type GaN-based layer and then nitridating said Ti layer.  
   
   
       17 . The method according to  claim 13 , wherein said step of forming a micro-structure layer further comprises a step of forming a Pt layer over said p-type GaN-based layer and then annealing said Pt layer.  
   
   
       18 - 25 . (canceled)