US2006033124A1PendingUtilityA1

Method for fabrication of semiconductor device

48
Assignee: EASIC CORPPriority: Dec 18, 2002Filed: Oct 3, 2005Published: Feb 16, 2006
Est. expiryDec 18, 2022(expired)· nominal 20-yr term from priority
H10W 20/49
48
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Claims

Abstract

A novel method is presented to provide ASICs with drastically reduced NRE and with volume flexibility. The invention includes a method of fabricating an integrated circuit, including the steps of: providing a semiconductor substrate, forming a borderless logic array including a plurality of Area I/Os and also including the step of forming redistribution layer for redistribution at least some of the Area I/Os for the purpose of the device packaging. The fabrication may utilize Direct Write e-Beam for customization. The customization step may include fabricating various types of devices at different volume from the same wafer.

Claims

exact text as granted — not AI-modified
1 .- 62 . (canceled)  
   
   
       63 . A device comprising: 
 a borderless logic array;    area I/Os;    a redistribution layer to redistribute one or more of said area I/Os; and    at least one pad to connect said device to at least one other device, wherein at least one said pad overlays at least a portion of the logic array or a portion of the area I/Os.    
   
   
       64 . The device according to  claim 63 , further comprising: 
 a borderless memory array.    
   
   
       65 . The device according to  claim 63 , wherein said logic array comprises: 
 a module array.    
   
   
       66 . A device comprising: 
 a borderless logic array, including one or more logic array interconnections, wherein said one or more logic array interconnections comprise metal layers and via layers, and wherein at least one of said metal layers comprises at least one substantially repeating pattern for a portion used for said logic array interconnections;    area I/Os; and    a redistribution layer.    
   
   
       67 . The device according to  claim 66 , wherein at least two of said metal layers comprise substantially repeating patterns for portions used for said logic array interconnections.  
   
   
       68 . A device according to  claim 66 , wherein at least three of said metal layers comprise substantially repeating patterns for portions used for said logic array interconnections.  
   
   
       69 . A device comprising: 
 a borderless logic array;    area I/Os positioned in a non-surrounding fashion with respect to said borderless logic array; and    a redistribution layer to redistribute at least some of said area I/Os.    
   
   
       70 . A device comprising: 
 a borderless logic array, the borderless logic array comprising a repeating module;    area I/Os positioned in a non-surrounding fashion with respect to at least one of said repeating modules; and    a redistribution layer to redistribute at least some of said area I/Os.    
   
   
       71 . A device comprising: 
 a borderless logic array, comprising a repeating core;    area I/Os, at least one of said area I/Os being a configurable I/O; and    a redistribution layer for redistributing at least some of said area I/Os.    
   
   
       72 . A device comprising: 
 a borderless logic array;    area I/Os, wherein at least one of said area I/Os comprises a via-configurable I/O.    
   
   
       73 . The device as in  claim 72 , further comprising: 
 a redistribution layer for redistributing at least some of said area I/Os.    
   
   
       74 . A device comprising: 
 a logic array; and    via-configurable I/Os, wherein at least one of said via-configurable I/Os contains a structure to enable the via-configurable I/O to be configured in the following forms: as a single-ended input; as a single-ended output; as a portion of a differential input pair; and as a portion of a differential output pair.

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