Reduced crosstalk sensor and method of formation

Abstract

Isolation methods and devices for isolating regions of a semiconductor device are disclosed. The isolation methods and structures include forming an isolating trench among pixels or other active areas of a semiconductor device. The trench extends through the substrate to the base layer, wherein a liner may be deposited on the side walls of the trench. A conductive material is deposited into the trench to block electrons from passing through.

1 - 36 . (canceled)  
   
   
       37 . A method of forming a structure for isolating areas in a semiconductor device, said method comprising: 
 forming a trench having sidewalls in a substrate, said trench extending to a surface of a base layer below said substrate; and    at least partially filling said trench with a conductive material.    
   
   
       38 . The method of  claim 37 , further comprising forming a dielectric liner along the sidewalls.  
   
   
       39 . The method of  claim 38 , wherein the dielectric liner is formed of at least two materials having different indices of refraction.  
   
   
       40 . The method of  claim 38 , wherein the dielectric liner comprises an oxide material.  
   
   
       41 . The method of  claim 38 , wherein the dielectric liner is one of high-density plasma oxide and spin on dielectric oxide.  
   
   
       42 . The method of  claim 37 , wherein the conductive material comprises one of doped polysilicon, undoped polysilicon and boron-doped carbon.  
   
   
       43 . The method of  claim 37 , wherein the trench is formed to a depth greater than about 2000 Angstroms.  
   
   
       44 . The method of  claim 42 , wherein the trench is formed to a depth in the range of about 4000 to about 5000 Angstroms.  
   
   
       45 . The method of  claim 37 , wherein the semiconductor device is part of a color filter array.  
   
   
       46 . The method of  claim 45 , wherein the semiconductor device is part of a Bayer pattern.  
   
   
       47 . The method of  claim 37 , wherein the semiconductor device comprises a CMOS image sensor.  
   
   
       48 . The method of  claim 37 , wherein the semiconductor device comprises a CCD image sensor.