Methods for forming molds

Abstract

The invention includes methods of forming patterns in low-k dielectric materials by contact lithography. In a particular application, a mold having a first pattern is pressed into a low-k dielectric material to form a second pattern within the material. The second pattern is substantially complementary to the first pattern. The mold is then removed from the low-k dielectric material. The invention also includes a method of forming a mold; and includes a mold configured to pattern a mass over a semiconductor substrate during contact lithography of the mass.

1 - 44 . (canceled)  
     
     
         45 . A method of forming a mold, comprising: 
 providing a template having a complement of a desired mold pattern, the template being approximately the size of a semiconductor wafer and the desired mold pattern being a pattern utilized for contact lithography during semiconductor processing;    providing an expanse having one or more holes extending therethrough;    providing a mold material precursor between the expanse and the template;    utilizing the template to press the mold material precursor against the expanse;    curing the mold material precursor as it is pressed against the expanse to convert the precursor to a mold material having the desired mold pattern; the mold material penetrating through the one or more holes in the expanse and being joined with the expanse to define a mold comprising the mold material and the expanse; and    separating the template from the mold.    
     
     
         46 . The method of  claim 45  wherein the expanse comprises a sheet of metallic material.  
     
     
         47 . The method of  claim 45  wherein the holes are about 0.1 inch in diameter.  
     
     
         48 . The method of  claim 45  wherein the mold material precursor comprises a liquid material and the mold material comprises a semi-solid material.  
     
     
         49 . The method of  claim 45  wherein the mold material is chemically bonded with the expanse after the curing.  
     
     
         50 . The method of  claim 45  wherein the expanse comprises a first alignment article configured for association with a second alignment article of a semiconductor substrate.