Semiconductor light-emitting element and method of producing the same

Abstract

There is provided a semiconductor light-emitting element and a method of producing the same including high density and high quality quantum dots emitting light at a wavelength of 1.3 μm. A semiconductor light-emitting element has a first GaAs layer, a second InAs thin film layer having the plurality of InAs quantum dots formed on the first GaAs layer, a third InGaAs layer formed on the second InAs thin film layer having the plurality of InAs quantum dots, and a fourth GaAs layer formed on the third InGaAs layer, wherein the As source is As 2 .

1 . A semiconductor light-emitting element, comprising: 
 a first GaAs layer,    a second InAs thin film layer having the plurality of InAs quantum dots formed on the first GaAs layer,    a third InGaAs layer formed on the second InAs thin film layer having the plurality of InAs quantum dots, and    a fourth GaAs layer formed on the third InGaAs layer,    wherein the As source is As 2 .    
     
     
         2 . A semiconductor light-emitting element according to  claim 1 , wherein the second InAs thin film layer having the plurality of InAs quantum dots formed on the first GaAs layer is formed at a growth temperature of not less than 540° C. and at a growth speed of not less than 0.006 ML/s.  
     
     
         3 . A semiconductor light-emitting element according to  claim 1  or 2, wherein the light-emitting element has a light emission wavelength within a range of 1.28 to 1.34 mm, a surface density of not less than 6×10 10  cm −2  and an emission half width of not more than 40 meV.  
     
     
         4 . A method of producing a semiconductor light-emitting element, comprising the steps of: 
 forming a GaAs layer on a semiconductor substrate,    forming an InAs thin film layer having the plurality of InAs quantum dots on the GaAs layer,    forming an InGaAs layer on the InAs thin film layer having the plurality of InAs quantum dots, and    forming another GaAs layer on the InGaAs layer,    wherein As source is As 2 .    
     
     
         5 . A method of producing a semiconductor light-emitting element according to  claim 4 , wherein the InAs thin film layer having the plurality of InAs quantum dots is produced at a growth temperature of not less than 540° C.  
     
     
         6 . A method of producing a semiconductor light-emitting element according to  claim 5 , wherein the InAs thin film layer having the plurality of InAs quantum dots is produced at a growth temperature of not less than 540° C. but not more than the evaporating temperature of indium.  
     
     
         7 . A method of producing a semiconductor light-emitting element according to any one of  claims 4  to  6 , wherein the InAs thin film layer having the plurality of InAs quantum dots is produced at a growth speed of not less than 0.006 ML/s.  
     
     
         8 . A method of producing a semiconductor light-emitting element according to  claim 4 , wherein the InAs thin film layer having the plurality of InAs quantum dots is produced at a growth temperature of not less than 540° C. and at a growth speed of not less than 0.006 ML/s.  
     
     
         9 . A laminated semiconductor light-emitting element comprising the plurality of the semiconductor light-emitting elements according to  claim 1  vertically stacked on one another, wherein the first layer of one semiconductor element is laminated on the fourth layer of another semiconductor element.  
     
     
         10 . A laminated semiconductor light-emitting element according to  claim 9 , wherein an InGaAs layer having a high In content is formed at an interface between the InAs quantum dots and the InGaAs layer, and wherein the amount of In contained in the InGaAs layer is gradually decreased in a direction away from the interface.  
     
     
         11 . A method of producing a semiconductor light-emitting element, comprising the steps of: 
 forming a GaAs layer on a semiconductor substrate,    forming an InAs thin film layer having the plurality of InAs quantum dots on the GaAs layer,    forming an InGaAs layer on the InAs thin film layer having the plurality of InAs quantum dots,    forming another GaAs layer on the InGaAs layer, and    repeating the steps so that the desired number of the semiconductor light-emitting elements are vertically stacked,    wherein As source is As 2 .    
     
     
         12 . A method of producing a semiconductor light-emitting element according to  claim 11 , wherein an InGaAs layer having a high In content is formed at an interface between the InAs quantum dots and the InGaAs layer, and wherein the amount of In contained in the InGaAs layer is gradually decreased in a direction away from the interface emitting element according to  claim 11  or 12, wherein the  
     
     
         13 . A method of producing a semiconductor light-element according to  claim 11  or  12 , wherein the InAs thin film layer having the plurality of InAs quantum dots is produced at a growth temperature of not less than 540° C.  
     
     
         14 . A method of producing a semiconductor light-emitting element according to  claim 13 , wherein the InAs thin film layer having the plurality of InAs quantum dots is produced at a growth temperature of not less than 540° C. but not more than the evaporating temperature of indium.  
     
     
         15 . A method of producing a semiconductor light-emitting element according to  claim 11  or  12 , wherein the InAs thin film layer having the plurality of InAs quantum dots is produced at a growth speed of not less than 0.006 ML/s.  
     
     
         16 . A method of producing a semiconductor light-emitting element according to  claim 11  or  12 , wherein the InAs thin film layer having the plurality of InAs quantum dots is produced at a growth temperature of not less than 540° C. and at a growth speed of not less than 0.006 ML/s.  
     
     
         17 . A semiconductor light-emitting element according to  claim 1 ,  2 ,  9  or  10 , wherein the semiconductor light-emitting element is a planar semiconductor light-emitting element.