Method for manufacturing a silicon sensor and a silicon sensor

Abstract

The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer ( 10 ) is formed by etched openings at least one spring element configuration ( 7 ) and at least one seismic mass ( 8 ) connected to said spring element configuration ( 7 ). According to the invention, the openings and trenches ( 8 ) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration ( 7 ) is based on wet etch methods.

1 - 6 . (canceled)  
   
   
       7 . A silicon sensor structure manufactured from a single crystal silicon wafer so as to comprise 
 a frame,    at least one elongated spring element deflectable outward from the plane of the wafer, connected at its one end to the frame, and    at least one seismic mass connected to the other end of the spring element, characterized in that    an intersection line of inclined crystal planes is formed at the ends of the spring element or at least in a close vicinity thereof.    
   
   
       8 . The sensor structure of  claim 7 , characterized in that the sensor structure is made from a single-crystal silicon wafer, whereby all inclined crystal planes are crystal planes.  
   
   
       9 . The sensor structure of  claim 7 , characterized in that the intersection line of the crystal planes is oriented at least substantially parallel with the longitudinal axis of the spring element.  
   
   
       10 . The sensor structure of  claim 8 , characterized in that the intersection line of the crystal planes is oriented at least substantially parallel with the longitudinal axis of the spring element.