Compound semiconductor device epitaxial growth substrate, semiconductor device, and manufacturing method thereof

Abstract

A compound semiconductor device epitaxial growth substrate, wherein a semiconductor substrate, a substrate protective layer made of a material that is different from the material of the substrate, a middle layer for making separation of the semiconductor substrate and a compound semiconductor device layer possible, and a compound semiconductor device layer that is formed through epitaxial growth are layered in this order; and a semiconductor device which uses the compound semiconductor device layer that is gained by separating the semiconductor substrate, the substrate protective layer and the middle layer from this compound semiconductor device epitaxial growth substrate; as well as manufacturing methods for these.

1 . A compound semiconductor device epitaxial growth substrate, wherein 
 a semiconductor substrate,    a substrate protective layer made of a material that is different from the material of the substrate,    a middle layer for making separation of the semiconductor substrate and a compound semiconductor device layer possible, and    a compound semiconductor device layer that is formed through epitaxial growth are layered in this order.    
     
     
         2 . The compound semiconductor device epitaxial growth substrate according to  claim 1 , wherein 
 said substrate protective layer can be removed through etching at an etching selection ratio of no less than 80% against the semiconductor substrate.    
     
     
         3 . The compound semiconductor device epitaxial growth substrate according to  claim 1 , wherein 
 said substrate protective layer lattice matches the semiconductor substrate .    
     
     
         4 . The compound semiconductor device epitaxial growth substrate according to  claim 1 , wherein 
 said middle layer is made of a material which can be etched with a liquid or a gas that does not etch the substrate or the element layer.    
     
     
         5 . The compound semiconductor device epitaxial growth substrate according to  claim 1 , wherein 
 said semiconductor substrate is GaAs, and the substrate protective layer is In 0.5 Ga 0.5 P, (AlGa) 0.5 In 0.5 P or Al x Ga 1-x As (x>0.3).    
     
     
         6 . A semiconductor device which uses the compound semiconductor device layer that is gained by separating the semiconductor substrate, the substrate protective layer and the middle layer from the compound semiconductor device epitaxial growth substrate according to  claim 1 .  
     
     
         7 . A manufacturing method of a compound semiconductor device epitaxial growth substrate, comprising the steps of: 
 removing a middle layer for making possible separation of a semiconductor substrate and a compound semiconductor device layer that is formed through epitaxial growth from a compound semiconductor device epitaxial growth substrate, wherein the semiconductor substrate, a substrate protective layer made of a material that is different from the material of the substrate, the middle layer, and the compound semiconductor device layer are layered in this order, so that the semiconductor substrate and the compound semiconductor device layer are separated;    removing the substrate protective layer through etching so as to expose the surface of the semiconductor substrate; and    sequentially growing a substrate protective layer, a middle layer and a compound semiconductor device layer on the exposed semiconductor substrate.    
     
     
         8 . A manufacturing method of a semiconductor device, wherein 
 a semiconductor device is manufactured using the compound semiconductor device layer that is gained in accordance with the manufacturing method of a compound semiconductor device epitaxial growth substrate according to  claim 7.